Emergence of the sub‐THz central peak at phase transitions in artificial BaTiO3/(Ba,Sr)TiO3 superlattices

A prominent central peak in the sub‐THz frequency range was observed in the Raman spectra of BaTiO₃/(Ba,Sr)TiO₃ (BT/BST) superlattice grown on (001)MgO substrate. Both soft and central mode show an anomaly around 200 K and 280 K, which can be correlated with orthorhombic to monoclinic phase transition of BST and BT, respectively. The observed temperature dependence of the central mode enabled us to explain rather broad temperature dependence of the dielectric permittivity previously observed in BT/BST superlattices. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Electro-Mechanochemical Atom Transfer Radical Cyclizations using Piezoelectric BaTiO3

The formation and regeneration of active Cu^I species is a fundamental mechanistic step in copper-catalyzed atom transfer radical cyclizations (ATRC). Typically, the presence of the catalytically active Cu^I species in the reaction mixture is secured by using high Cu^I catalyst loadings or the addition of complementary reducing agents. In this study it is demonstrated how the piezoelectric properties of barium titanate (BaTiO₃) can be harnessed by mechanical ball milling to induce electrical polarization in the strained piezomaterial. This strategy enables the conversion of mechanical energy into electrical energy, leading to the reduction of a Cu^II precatalyst into the active Cu^I species in copper-catalyzed mechanochemical solvent-free ATRC reactions.     

新型BT-BMT-xBNT无铅高储能密度陶瓷研究

本文采用传统固相反应法,成功制备了新型无铅弛豫铁电陶瓷(1-x)[0.9BaTiO₃-0.1Bi(Mg_0.25Ta_0.5)O₃]-xBi_0.5Na_0.5TiO₃。结果表明,较高居里温度的Bi_0.5Na_0.5TiO₃的引入,使得材料体系中建立了更多的以Bi—O耦合为主的极性纳米区域,弥补了因Bi(Mg_0.25Ta_0.5)O₃的加入导致的宏观极化强度的减少,提高了材料的饱和极化强度,实现了较高储能密度的同时具有更好的温度稳定性。在245 kV/cm电场强度下,x=0.2样品的储能密度约为4.01 J/cm³,储能效率约为84.86%,同时该组分在20~170 ℃储能密度的变化率小于5%,储能效率的变化率小于6%,表现出优异的温度稳定性。     

Mg-Ni/BaTiO_3催化剂上CH_4/CO_2重整反应研究

采用等体积浸渍法制备了MgO改性的一系列Mg-Ni/BaTiO3催化剂,并在固定床反应装置上考察了这些催化剂对CO2重整CH4反应的催化活性。结果表明,MgO质量负载为5%的Mg-Ni/BaTiO3催化剂活性最好。考察了不同浸渍顺序对催化剂性能的影响,结果表明,先浸镁盐后浸镍盐制得的催化剂催化性能更为理想。XRD、TPR和TPD表征发现,与催化剂Ni/BaTiO3相比,MgO的添加有利于提高催化剂的催化活性和抗积炭性能,对催化剂起到了良好的改性作用。     

高压烧结法合成致密纳米BaTiO3陶瓷结构和铁电性能研究

 在6 GPa压力、1 000 ℃温度条件下制备了致密的纳米BaTiO₃陶瓷，合成样品的平均晶粒尺寸为50 nm，理论密度在97%以上。通过介电测量，观察到了样品宽化的相变峰，它与粗晶陶瓷的相变峰大不相同。由于90°电畴的减少和退极化场的存在，观察到了细长的电滞回线，它是样品铁电性存在的有力证据，表明钛酸钡陶瓷的临界尺寸在50 nm以下。     

Ce:BaTiO3晶体中两个深陷阱能级引起的光折变光栅暗衰减特性

对Ce:BaTiO3晶体中光折变光栅的暗衰减特性进行了实验研究，观测到了晶体禁带中的Fe离子和Ce离子两个深陷阱能级同时参与了光折变过程。在单深能级模型和浅－深能级模型的基础上，提出了简化的双深能级模型，并根据该模型定量地分析了Fe离子和Ce离子每个深陷阱能级在不同光栅波矢、不同光栅写入光强时对总空间电场以及光折变光栅的贡献。     

Co:BaTiO3纳米复合薄膜的制备及其结构

用脉冲激光沉积技术(PLD)在MgO(100)基底上生长了嵌埋Co纳米晶的BaTiO3复合薄膜. 分别利用x射线衍射(XRD)、原子力显微镜(AFM)以及拉曼光谱(Raman)对薄膜的微观结构、表面 形貌进行了表征. 结果表明该薄膜为c轴取向的四方晶体结构，薄膜表面均匀、致密、 具有原子尺度的光滑性，其均方根表面粗糙度(RMS)达到015nmCo以纳米晶形式嵌埋BaTi O3基体中，呈单分散性均匀分布，其粒径随激光脉冲数的增加而增大. Co：BaTiO3纳米 复合薄膜拉曼峰的强度随钴纳米晶粒径的增加明显减弱，但是峰的宽度逐渐增加. 关键词： Co：BaTiO3 纳米复合薄膜 脉冲激光沉积     

BaTiO3晶体中光束自陷的理论研究

对聚焦光束通过有一定外加电场ＢａＴｉＯ３晶体时的自陷现象进行了理论分析，发现在正切割晶体中观察空间孤子是不合适的，因仅利用了很微小的电光系数γ３３。对异型切割情况进行了讨论，给出了维持光束自陷的外加电场范围和实际观察的最佳角度。     

非相干光作用下的Ce：BaTiO3自泵浦相位共轭镜特性

地Ｃｅ：ＢａＴｉＯ３晶体的自泵浦相位共竟然非相干光作用下自泵浦相位共轭反射率增强的特性进行了研究。实验是在Ｈｅ－Ｎｅ激光产生稳态自泵浦相位共轭输出后，用非相干光平行ｃ轴照射来获得这一增强特性的，当水平移动非相干光入射位置，发现有两个区域非相干光作用能使相位共轭反射率增加，本文对此进行了相应的分析和讨论。     

Current–voltage characteristic of BaTiO3−δ in its mixed n/p regime under oxygen potential gradients

Current (I)–voltage (V) characteristic under oxygen potential gradients was experimentally examined on single crystal BaTiO_3−δ in its mixed ion/electron/hole regime at 1000 °C. The variation of I vs. V appears similar to that of an n/p junction, but with the limiting slope (dI/dV) approaching the maximum and minimum possible equilibrium conductances in the given oxygen potential gradient as increasing forward and reverse bias, respectively. This characteristic has been precisely traced theoretically by using the partial ionic and electronic conductivities of BaTiO_3−δ as measured against uniform oxygen chemical potential in equilibrium state. The nonlinear characteristic is attributed to the redistribution of oxygen chemical potential that is caused by a non-vanishing gradient of the ionic transference number of the oxide under the given oxygen potential gradient. It is demonstrated that the bulk transport properties of a mixed conductor may be tailored by terminal voltage in a chemical potential gradient.