Magnetic circular dichroism of [Co/Pd] and [CoB/Pd] multilayered films

Magnetic circular dichroism (MCD) and X-ray absorption spectra (XAS) at the Co L_2,3-edge of [Co/Pd]₂₀ and [CoB/Pd]₂₀ multilayered films, which were fabricated at 260 °C with different magnetic layer thicknesses (δ), have been measured. The lineshapes of XAS–MCD show that the electronic state of Co 3d of the films hardly changes even when sputtered at higher temperatures. The expectation values of orbital and spin angular momentum (〈L_z〉 and 〈S_z〉) are estimated using the sum rule, and it is found that 〈L_z〉/〈S_z〉 in δ<0.5 nm is larger than that in δ>0.5 nm.     

Preparation of uniform rhodamine B-doped SiO2/TiO2 composite microspheres

Uniform rhodamine B (RB)-doped SiO₂/TiO₂ composite microspheres with catalytic and fluorescent properties were prepared by an easy and economical method in this paper. The composite microspheres were built up with well-dispersed silica particles as the cores, RB as both the doped agent and stabilizer, and the TiO₂ shells were obtained through the hydrolysis of TiCl₄ in water bath. The morphology and structure of the particles were characterized by scanning electron microscopy (SEM) and X-ray powder diffraction (XRD). The characterization results indicate that composite particles are all in spherical shape and have a narrow size distribution. The composite particles calcined above 500 °C reveal clear crystalline reflection peaks of the rutile TiO₂ which exhibits well catalytic property. The photocatalytic experiment was carried out in order to examine the catalytic property of composite microspheres. The fluorescent property of particles was also investigated. Dye-leakage test indicates that RB molecules entrapped in the composite particles by this method are stable inside the particles.     

Near infrared transparent conducting CdO nanocrystallite films codoped with boron and hydrogen

Thin films of boron and hydrogen-codoped CdO (B&H-codoped CdO) oxide with different boron content have been prepared on glass and silicon substrates. The effects of codoping on the structural, electrical, and optical properties of the host CdO films were systematically studied. The structural study shows that doped boron ions occupied locations in interstitial positions and/or Cd²⁺-ion vacancies of CdO lattice. The bandgap of B-doped CdO shrinks by 25-38% compare to hydrogenated CdO. Such bandgap narrowing was phenomenological studied in the framework of the available models. The electrical behaviours show that all the prepared B&H-doped CdO films are degenerate semiconductors. However, the hydrogenated 7.9% boron doped CdO has resistivity of 1.52 × 10⁻⁴ Ω cm, mobility of 47.5 cm²/V s, and carrier concentration of 8.6 × 10²⁰ cm⁻³. The optoelectronic measurements in visible and NIR spectral range demonstrate the utility of the oxide/p-Si heterojunction in photodetection applications.     

Boron-Doped PdCuAu Nanospine Assembly as an Efficient Electrocatalyst toward Formic Acid Oxidation

Control of the composition and morphology of Pd-based electrocatalysts is a promising strategy for the development of efficient direct formic acid fuel cells. Herein, a two-step method is presented for the design of B-doped PdCuAu nanospine assemblies (B-PdCuAu NAs) using NaBH₄ as the boron dopant. The boron content can be tailored easily by tuning the reaction time, and an optimal boron content is beneficial to promote the formic acid oxidation reaction. Such B-PdCuAu NAs exhibit superior mass and specific activities to commercial Pd black and PdCuAu NAs in alkaline solution. The excellent catalytic performance of B-PdCuAu NAs may arise from the increase in surface active sites and the electronic effect of boron modification. This work provides a facile synthesis of the B-doped metallic catalysts and highlights the boron modification in improving their performance as anode electrocatalysts for fuel cells.     

孔径渐变的有序介孔炭的合成及电化学应用

以SBA-15为模板,硼酸为孔道扩张剂,蔗糖为碳源制备了一系列孔径渐变的有序硼杂介孔炭材料,并研究了其电化学电容性能。氮气静态吸附测试表明,当硼酸物质的量分数从0%增大到75%时,介孔炭的孔径从3.3nm增大至8.1nm,并保持有序的介孔结构。电化学测试表明,在KOH电解液中,硼杂介孔炭比电容明显高于未掺杂硼有序介孔炭,孔道有序性和孔径大小共同影响了炭材料的电容性能。当硼酸物质的量分数为50%时,炭材料的比电容性能最优。     

缺陷对Pt在Graphene上吸附影响的研究

本文利用第一原理方法计算了空位缺陷和硼（B）掺杂时对Pt在graphene上吸附的影响.结果表明：Pt在graphene上吸附的稳定位置是Pt吸附在桥位；悬挂键的存在极大的增强了Pt在graphene空位处的吸附；B替位掺杂有利于Pt原子在杂质附近的吸附.     

Electronic structure and optical property of boron doped semiconducting graphene nanoribbons

We present a system study on the electronic structure and optical property of boron doped semiconducting graphene nanoribbons using the density functional theory. Energy band structure, density of states, deformation density, Mulliken popular and optical spectra are considered to show the special electronic structure of boron doped semiconducting graphene nanoribbons. The C—B bond form is discussed in detail. From our analysis it is concluded that the Fermi energy of boron doped semiconducting graphene nano...     

B,P单掺杂和共掺杂石墨烯对O,O_2,OH和OOH吸附特性的密度泛函研究

基于第一性原理的密度泛函理论研究了B,P单掺杂以及B,P共掺杂石墨烯对O,O_2,OH和OOH的吸附特性.通过分析吸附能、键长、态密度以及电荷转移,比较了不同掺杂对燃料电池氧还原反应(ORR)中间物吸附的影响,进而探讨了反应过程,并给出各步反应自由能的变化趋势.结果表明:B,P单掺杂石墨烯对各中间物的吸附能存在线性关系,掺P石墨烯吸附OOH的吸附能为3.26 eV,远大于掺B石墨烯的吸附能0.73 eV;掺P石墨烯较大的吸附能有利于中间物OOH中O—O键的断裂,掺B石墨烯吸附能小有利于中间物OH生成H2O脱附的反应发生;而B,P共掺杂石墨烯的吸附存在协同效应,具有更好的催化ORR的反应能力.     

硼掺杂碳化硅负载Pt催化剂的甲醇电催化氧化性能

以硼掺杂碳化硅(B0.1SiC)为载体,采用循环伏安法在B0.1SiC载体上电沉积Pt纳米粒子制备了Pt/B0.1SiC催化剂。利用X射线光电子能谱、X射线衍射、氮气吸附-脱附、扫描电镜及透射电镜等测试方法对催化剂的晶型、表面性质及形貌进行了表征。结果表明,硼原子掺杂进入SiC晶格并取代了Si位点,使B0.1SiC载体的导电性增强;Pt纳米粒子均匀地分布在B0.1SiC载体上,平均粒径为2.7 nm。与相同条件下制备的Pt/SiC催化剂相比,Pt/B0.1SiC具有较大的电化学活性表面积、更高的甲醇催化氧化活性和稳定性。     

Raman spectroscopic study on boron-doped silicon nanoparticles

Raman analyses were performed on thin films prepared from B-doped Si nanoparticles with an average diameter of 15 nm using the spin-coating method. The resulting spectrum exhibited a broad band with a peak near 520 cm⁻¹. The band was decomposed into three bands corresponding to the crystalline, grain boundary (GB), and amorphous regions by the least-squares band-fitting method based on the three Voigt bands. The fractions of the crystalline, GB, and amorphous regions were 37%, 35%, and 28%, respectively. A spherical particle exhibited an ordered crystalline core surrounded by a disordered shell in a transmission electron microscope (TEM) image. The crystalline fraction of the 15-nm B-doped Si nanoparticle film was much lower than that of the 19-nm P-doped Si nanoparticle film. This result suggested that the B-doping mechanism was different from that of P-doping. The temperature of the sample was estimated from the ratio of the peak intensities of anti-Stokes to Stokes Raman bands (I^AS/I^S) observed near 520 cm⁻¹. The temperature of the B-doped Si nanoparticle film upon irradiation at a power density of 4.6 kW/cm² was 298 °C, whereas the temperature of the P-doped Si nanoparticle film was 92 °C. The B-doped Si nanoparticle films were capable of producing light-induced heat.