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1.
Rongrong Li Hongjie Peng Qingping Wu Xuejun Zhou Jiang He Hangjia Shen Minghui Yang Chilin Li 《Angewandte Chemie (Weinheim an der Bergstrasse, Germany)》2020,132(29):12227-12236
Herein, we propose the construction of a sandwich-structured host filled with continuous 2D catalysis–conduction interfaces. This MoN-C-MoN trilayer architecture causes the strong conformal adsorption of S/Li2Sx and its high-efficiency conversion on the two-sided nitride polar surfaces, which are supplied with high-flux electron transfer from the buried carbon interlayer. The 3D self-assembly of these 2D sandwich structures further reinforces the interconnection of conductive and catalytic networks. The maximized exposure of adsorptive/catalytic planes endows the MoN-C@S electrode with excellent cycling stability and high rate performance even under high S loading and low host surface area. The high conductivity of this trilayer texture does not compromise the capacity retention after the S content is increased. Such a job-synergistic mode between catalytic and conductive functions guarantees the homogeneous deposition of S/Li2Sx, and avoids thick and devitalized accumulation (electrode passivation) even after high-rate and long-term cycling. 相似文献
2.
As a new type of quantum dots (QDs), hexagonal boron nitride quantum dots (BNQDs) exhibit promising potential in the applications of disease diagnosis, fluorescence imaging, biosensing, metal ion detection, and so on, because of their remarkable chemical stability, excellent biocompatibility, low cytotoxicity, and outstanding photoluminescence properties. However, the large-scale fabrication of homogeneous BNQDs still remains challenging. In this article, the properties and common fabrication methods of BNQDs are summarized based on the recent research progress. Then, the corresponding yields, morphologies, and fabrication mechanisms of these as-obtained BNQDs are discussed in detail. Moreover, the applications of these as-obtained BNQDs in different fields are also discussed. This article is expected to inspire new methods and improvements to achieve large-scale fabrication of homogeneous BNQDs, which will enable their practical applications in future. 相似文献
3.
Multi-quantum well heterostructures (MQWHs) of the novel Ga(NAsP)/GaP material system have been grown, pseudomorphically strained to GaP-substrate. The crystalline perfection is verified by transmission electron microscopy (TEM). For As-concentrations in excess of about 70%, a direct band structure and adequate luminescence efficiency for laser device application is observed. Temperature-dependent photoluminescence (PL) investigations show the influence of carrier localisation and non-radiative recombination processes typical for dilute nitride materials. With rising N content in the active material, the emission wavelength shifts towards longer wavelength, leading to Ga(NAs)/GaP MQW structures with photon energies below the indirect band gap of silicon (Si). At the same time the luminescence intensity drops due to an increase in non-radiative carrier traps and/or structural degradation. 相似文献
4.
A simple, efficient and highly chemoselective method for tetrahydropyranylation of alcohols and phenols has been developed by their reaction with 3,4-dihydro-2H-pyran at room temperature in the presence of a catalytic amount of polystyrene supported AlCl3. The method is also highly selective for monoprotection of symmetrical diols. 相似文献
5.
Taking advantage of our knowledge of the capacity of DIBAL-H to de-O-alkylate, we propose an alternative mechanism for a spiroketal rearrangement described by E. Suàrez. We also show that this proposal can account for the formation of the secondary product, whose original structure we propose to correct. 相似文献
6.
Vincent Maurice 《Surface science》2005,581(1):88-104
STM, STS, LEED and XPS data for crystalline θ-Al2O3 and non-crystalline Al2O3 ultra-thin films grown on NiAl(0 0 1) at 1025 K and exposed to water vapour at low pressure (1 × 10−7-1 × 10−5 mbar) and room temperature are reported. Water dissociation is observed at low pressure. This reactivity is assigned to the presence of a high density of coordinatively unsaturated cationic sites at the surface of the oxide film. The hydroxyl/hydroxide groups cannot be directly identify by their XPS binding energy, which is interpreted as resulting from the high BE positions of the oxide anions (O1s signal at 532.5-532.8 eV). However the XPS intensities give evidence of an uptake of oxygen accompanied by an increase of the surface coverage by Al3+ cations, and a decrease of the concentration in metallic Al at the alloy interface. A value of ∼2 for the oxygen to aluminium ions surface concentration ratio indicates the formation of an oxy-hydroxide (AlOxOHy with x + y ∼ 2) hydroxylation product. STM and LEED show the amorphisation and roughening of the oxide film. At P(H2O) = 1 × 10−7 mbar, only the surface of the oxide film is modified, with formation of nodules of ∼2 nm lateral size covering homogeneously the surface. STS shows that essentially the valence band is modified with an increase of the density of states at the band edge. With increasing pressure, hydroxylation is amplified, leading to an increased coverage of the alloy by oxy-hydroxide products and to the formation of larger nodules (∼7 nm) of amorphous oxy-hydroxide. Roughening and loss of the nanostructure indicate a propagation of the reaction that modifies the bulk structure of the oxide film. Amorphisation can be reverted to crystallization by annealing under UHV at 1025 K when the surface of the oxide film has been modified, but not when the bulk structure has been modified. 相似文献
7.
8.
Temperature effects on deposition rate of silicon nitride films were characterized by building a neural network prediction model. The silicon nitride films were deposited by using a plasma enhanced chemical vapor deposition system and process parameter effects were systematically characterized by 26−1 fractional factorial experiment. The process parameters involved include a radio frequency power, pressure, temperature, SiH4, N2, and NH3 flow rates. The prediction performance of generalized regression neural network was drastically improved by optimizing multi-valued training factors using a genetic algorithm. Several 3D plots were generated to investigate parameter effects at various temperatures. Predicted variations were experimentally validated. The temperature effect on the deposition rate was a complex function of parameters but N2 flow rate. Larger decreases in the deposition rate with the temperature were only noticed at lower SiH4 (or higher NH3) flow rates. Typical effects of SiH4 or NH3 flow rate were only observed at higher or lower temperatures. A comparison with the refractive index model facilitated a selective choice of either SiH4 or NH3 for process optimization. 相似文献
9.
The coupling of visible nanosecond laser pulses to metallic targets irradiated in vacuum is studied. The expressions of the vapour and plasma ignition times are obtained. Two cases for vapour breakdown in the plasma ignition process are considered. The first case is that 40 generations of new electrons are born in vapour generation time before plasma formation as assumed in the literature. The second case is that 10 generations of new electrons are born in vapour generation time. Molybdenum (Mo), niobium (Nb) and aluminium (Al) targets are considered for illustrations of our results. The expression of the plasma ignition time for the Al target is substantially different from that reported in the literature. The vapour and plasma ignition threshold laser intensities are calculated and compared with those reported in the literature. Reasons for disagreement are discussed. The plasma ignition threshold estimated in the second case is noted to be in good agreement with the reported experimental result. 相似文献
10.
利用球磨法制备石墨-六角氮化硼微晶混合物,并在6.1 GPa、800~1 500 ℃条件下与水进行高压反应,以便研究用水作触媒合成B-C-N三元化合物的可能性。通过对反应产物的XRD、XPS谱分析发现:高压下随着温度的升高,反应产物中出现再结晶石墨,其晶化程度逐渐提高;但没有出现再结晶六角氮化硼,也未出现立方氮化硼。在球磨不充分条件下,石墨-六角氮化硼混合物的XRD谱没有完全弥散,它们与水高压反应时,能观察到石墨与立方氮化硼分别结晶的现象,但都没有形成B-C-N晶化结构。 相似文献