Magnetic Properties of Metallic Multilayered Systems

Hyperfine Interactions - The giant magnetoresistance (GMR) effect was an epoch-making discovery in the field of magnetic materials research. In this article, studies on magnetic multilayered...     

High resolution X-ray diffraction of GaN grown on Si (1 1 1) by MOVPE

High temperature GaN layers have been grown on Si (1 1 1) substrate by metalorganic vapor phase epitaxy (MOVPE). AlN was used as a buffer layer and studied as a function of thickness and growth temperature. The growth was monitored by in situ laser reflectometry. High resolution X-ray diffraction (HRXRD) revealed that optimized monocrystalline GaN was obtained for a 40 nm AlN grown at 1080 °C. This is in good agreement with the results of morphological study by scanning electron microscopy (SEM) and also confirmed by atomic force microscopy (AFM) observations. The best morphology of AlN with columnar structure and lower rms surface roughness is greatly advantageous to the coalescence of the GaN epilayer. Symmetric and asymmetric GaN reflections were combined for twist and stress measurements in monocrystalline GaN. It was found that mosaicity and biaxial tensile stress are still high in 1.7 μm GaN. Curvature radius measurement was also done and correlated to the cracks observations over the GaN surface.     

Structure and mechanical properties of Al/AlN multilayer with different AlN layer thickness

Nanometer scale Al/AlN multilayers have been prepared by dc magnetron sputtering technique with a columnar target. A set of Al/AlN multilayers with the Al layer thickness of 2.9 nm and the AlN layer thickness variation from 1.13 to 6.81 nm were determined. Low angle X-ray diffraction (LAXRD) was used to analyze the layered structure of multilayers. The phase structure of the coatings was investigated with grazing angle XRD (GAXRD). Mechanical properties of these multilayers were thoroughly studied using a nanoindentation and ball-on-disk micro-tribometer. It was found that the multilayer hardness and reduced modulus showed no strong dependence on the AlN layer thickness. Al2.9 nm/AlN1.13 nm multilayer had more excellent tribological properties than single layers and other proportion multilayers with a lowest friction coefficient of 0.15. And the tribological properties of all the multilayers are superior to the AlN single layer.     

Study of the structural and optical properties of GaN/AlN quantum dot superlattices

We study GaN/AlN Quantum Dot (QD) superlattices utilizing the STREL environment which allows the building of atomistic models, relaxation of the structures, the calculation of the electronic states and optical transitions and the visualization of the results. The forces are calculated using an appropriate Keating or Stillinger–Weber interatomic potential model and the electronic states and optical transitions using a tight-binding formulation which is economical and produces realistic electronic properties. The relaxed structure has strains mainly in the GaN region which are compressive and small tensile strains in the AlN region, mainly below the QD. In the calculation of the electronic states and of the optical transitions the strains are included realistically at the atomistic level. The study of the wavefunctions close to the fundamental gap show how these strains influence the form and spatial extent of the wavefunction. Very close to the fundamental gap the valence and some conduction states are confined in the QD and have considerable oscillator strength.     

c轴定向氮化铝薄膜的制备

利用电子回旋共振 (ECR)微波增强化学气相沉积法 (PECVD)并使用氮气 (N2 ) ,氩气 (Ar)和AlCl3蒸气作为气源在直径为 6 .35cm的 (10 0 )单晶硅片表面制备了c轴定向氮化铝 (AlN)薄膜 ,并使用X射线衍射仪及其X射线特征能谱和扫描电镜 (SEM)分析了薄膜特征 ,研究了微波功率、基板温度和N2 流量对薄膜c轴定向的影响 ,得到了c轴偏差角小于 5°的高质量大面积AlN薄膜。     

粘土矿物的结构特征及其应用研究

阐述了贮量巨大、用途广泛的粘土矿物，其充分开发应用的关键，在于根据其结构特征，并通过适当的物理、化学方法加以改造、以适应各种不同工业应用的要求。并以我们对粘土矿物进行活化、改性、层间插入及其工业应用产品开发的初步研究成果，阐明利用粘土硅酸盐多层次结构的可变性，开拓新的应用性能的可能性及粘土矿物充分开发应用的途径。     

First principle calculations study of AlN surface terminal structure evolution under different conditions

The surface structure and properties of aluminum nitride (AlN) play an important role in many applications. Using the first principle calculations method, we analyzed the surface terminal structure of AlN and its evolution under different conditions by determining the surface energy, adsorption energy, and evaporation energy of the Al and N terminals on the AlN(0001) surface. Our results show that the reason why the N terminal is less stable than the Al terminal is not only because of its high surface energy but also because its adsorption performance is extremely sensitive to the adsorption position. The surface N atoms combine to form N₂ molecules that escape during the evaporation process at high temperature. After surface N atoms escape, the AlN surface structure reconstitutes to form a hexagonal closest packing (HCP)–like structure, and the energy barrier for the reconstructing process is 3.2 eV. This shows that the structure and form of the AlN(0001) terminals depend on the environmental conditions.     

Proteins as functional interlayer in organic field-effect transistor

The paper summarizes and discusses the recent advances of proteins as functional interlayers in organic field-effect transistors (OFETs). Specific focus is given on the proteins integrated into the device structure, either to act as dielectric materials or to perform as the functional interlayer between the dielectric and the organic semiconductor (OSC). The main emphasis is give to the location and the specific effect of protein layers in the structure of OFETs. Besides, the possibility of amyloid serving as useful building blocks for OFET is discussed.     

Introducing voids around the interlayer of AlN by high temperature annealing

Introducing voids into AlN layer at a certain height using a simple method is meaningful but challenging. In this work, the AlN/sapphire template with AlN interlayer structure was designed and grown by metal-organic chemical vapor deposition. Then, the AlN template was annealed at 1700 ℃ for an hour to introduce the voids. It was found that voids were formed in the AlN layer after high-temperature annealing and they were mainly distributed around the AlN interlayer. Meanwhile, the dislocation density of the AlN template decreased from 5.26×10⁹ cm^-2 to 5.10×10⁸ cm^-2. This work provides a possible method to introduce voids into AlN layer at a designated height, which will benefit the design of AlN-based devices.     

Microwave-assisted one-pot three-component polymerization of alkynes,aldehydes and amines toward amino-functionalized optoelectronic polymers

We present a microwave-assisted one-pot polymerization with three-components of alkynes, aldehydes and amines for the synthesis of new amino-functionalized optoelectronic polymers. The polymerization of diynes(1a-1c), dialdehydes(2a and 2b) and dibenzylamine catalyzed by InCl_3 was carried out smoothly within 1h under microwave radiation, yielding four soluble polymers with high molecular weights. The resulting polymers P1 and P2 could be easily dissolved in alcohol and thus utilized as the cathode interlayer for polymer solar cells(PSCs). Compared with the control device, the PSCs with P1 and P2 as the cathode interlayer and PTB7-Th:PC_(71)BM as the photoactive layer exhibited significantly higher power conversion efficiencies(PCEs) of 9.49% and 9.16%, respectively. These results suggest that this polycoupling reaction is an efficient approach to construct three-component polymers for the practical applications.