斜入射角对二维正方形光子晶体带隙的影响

利用平面波法导出了光子晶体本征方程的矩阵形式,以此为基础计算了二维空气孔型正方形光子晶体在正入射时及斜入射时的带结构,并将带结构中混杂在一起的TE波和TM波的模式分离开来以分析斜入射角对带结构的影响.计算结果显示用电场E表示和用磁场H表示计算出来的结果完全一样,与电磁场是相互统一的结论完全吻合.研究还发现,TE波和TM波的第一带隙是完全分开的.随着波矢k的倾斜角度的增大,TE波的第一带隙逐渐减小并在波矢在（－1,0,1）平面内时完全消失.而TM波的带结构则随着波矢k的倾斜角的增大而变得平坦,带隙也是先随之增大,后又逐渐变小直至消失.     

高下路空气孔型光子晶体环形谐振腔的设计

提出一种基于二维正方晶格光子晶体空气孔型高下路效率的环形谐振腔,通过压缩线缺陷波导的宽度实现单模有效控制,同时讨论内围光子晶体列数对传输场的影响,然后运用二维时域有限差分方法数值分析了耦合强度及环区局部折射率调制对下路效率、品质因子以及下路波长等参量的影响.结果表明:当波导宽度为0.7个晶格常量,耦合强度为0个晶格常量,在信道波长为1 528.1 nm时,下路效率为99%,品质因子Q为379;当耦合强度提高到1个晶格常量,下路波长稍微漂移为1 524.3 nm,品质因子显著提高到1 397,而下路效率下降为89%.同时,下路波长会随着环区折射率的增加呈线性红移.     

Formation of AlxGa1−xAs periodic array of micro-hexagonal pillars and air holes by selective area MOVPE

A two-dimensional (2D) periodic array having air/semiconductor interfaces can be applied to photonic crystals (PCs), which are expected to control spontaneous emission and optical transports in the next-generation devices. In this paper, we report on the selective area metal-organic vapor phase epitaxial (SA-MOVPE) growth of a Al_xGa_1−xAs 2D periodic array on a GaAs (1 1 1)B substrate for application to 2DPCs having GaAs/AlGaAs heterostructures. Al_xGa_1−xAs (x=0, 0.25 and 0.50) growth was carried out on triangular lattice array of hexagonal GaAs openings and hexagonal SiN_x masks. A uniform Al_0.50Ga_0.50As hexagonal pillar array and a GaAs hexagonal air-hole array with a 1 μm-period were successfully obtained. The important growth parameter for uniform 2DPC structure formation by SA-MOVPE was clarified. Furthermore, we describe the successful demonstration of a 400 nm-period pillar array and an air-hole array, which corresponds to the optical communication wavelength λ=1.3–1.55 μm. The results indicate that SA-MOVPE method is very promising for the formation of uniform semiconductor 2DPCs without the occurrence of process-induced damages.     

高下路空气孔型光子晶体环形谐振腔的设计

提出一种基于二维正方晶格光子晶体空气孔型高下路效率的环形谐振腔,通过压缩线缺陷波导的宽度实现单模有效控制,同时讨论内围光子晶体列数对传输场的影响,然后运用二维时域有限差分方法数值分析了耦合强度及环区局部折射率调制对下路效率、品质因子以及下路波长等参量的影响.结果表明:当波导宽度为0.7个晶格常量,耦合强度为0个晶格常量,在信道波长为1 528.1nm时,下路效率为99%,品质因子Q为379;当耦合强度提高到1个晶格常量,下路波长稍微漂移为1 524.3nm,品质因子显著提高到1 397,而下路效率下降为89%.同时,下路波长会随着环区折射率的增加呈线性红移.