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排序方式: 共有438条查询结果,搜索用时 359 毫秒
1.
V. Ballarini G. Barucca E. Bennici C. F. Pirri C. Ricciardi E. Tresso F. Giorgis 《Physica E: Low-dimensional Systems and Nanostructures》2003,16(3-4):591
All amorphous silicon-nitride planar optical microcavities operating in the visible range have been grown by plasma enhanced chemical vapor deposition. The luminescence intensity of the N-rich silicon-nitride layer from a microcavity with 6 period distributed Bragg reflectors (DBRs) is two order of magnitude higher than that of the luminescent layer without the cavity. Moreover, a strong directionality of the microcavities emission can be observed. Such results can be ascribed to the anisotropic optical density of states induced in the Fabry–Perot structure. The quality factors of the resonators are strictly correlated to the number of periods of the DBRs. 相似文献
2.
P. Kratzer E. Penev M. Scheffler 《Applied Physics A: Materials Science & Processing》2002,75(1):79-88
We demonstrate how first-principles calculations using density-functional theory (DFT) can be applied to gain insight into
the molecular processes that rule the physics of materials processing. Specifically, we study the molecular beam epitaxy (MBE)
of arsenic compound semiconductors. For homoepitaxy of GaAs on GaAs (001), a growth model is presented that builds on results
of DFT calculations for molecular processes on the β2-reconstructed GaAs (001) surface, including adsorption, desorption,
surface diffusion, and nucleation. Kinetic Monte Carlo simulations on the basis of the calculated energetics enable us to
model MBE growth of GaAs from beams of Ga and As2 in atomistic detail. The simulations show that island nucleation is controlled by the reaction of As2 molecules with Ga adatoms on the surface. The analysis reveals that the scaling laws of standard nucleation theory for the
island density as a function of growth temperature are not applicable to GaAs epitaxy. We also discuss heteroepitaxy of InAs
on GaAs (001), and report first-principles DFT calculations for In diffusion on the strained GaAs substrate. In particular,
we address the effect of heteroepitaxial strain on the growth kinetics of coherently strained InAs islands. The strain field
around an island is found to cause a slowing down of material transport from the substrate towards the island, and thus helps
to achieve more homogeneous island sizes.
Received: 2 May 2001 / Accepted: 23 July 2001 / Published online: 3 April 2002 相似文献
3.
J.O. Andersen 《The European Physical Journal B - Condensed Matter and Complex Systems》2002,28(4):389-396
We consider an interacting homogeneous Bose gas at zero temperature in two spatial dimensions. The properties of the system
can be calculated as an expansion in powers of g, where g is the coupling constant. We calculate the ground state pressure and the ground state energy density to second order in the
quantum loop expansion. The renormalization group is used to sum up leading and subleading logarithms from all orders in perturbation
theory. In the dilute limit, the renormalization group improved pressure and energy density are expansions in powers of the
T
2B and T
2Bln(T
2B), respectively, where T
2B is the two-body T-matrix.
Received 19 April 2002 Published online 13 August 2002 相似文献
4.
Frequency dependence of ac conductivity from 1 to 105 Hz and time series of the conductivity at 2 kHz were measured along c-axis of thulium nitrate crystal, Tm(NO3)36H2O at temperatures from 203.15 to 293.15 K. The meta-stability was observed. The frequency spectra of the conductivity were similar to those in disorder system. Aging effect was observed. Non-periodic instability (burst) was found. Non-linear dynamical property was characterized by 1/f noise spectrum, limit cycle in return map and dependence of correlation exponent on embedding dimension. 相似文献
5.
Using kinetic Monte Carlo method, we have simulated a pulsed energetic growth process in pulsed laser deposition. During the growth of film, substrate temperature mainly influences upon film morphology by directly enhancing the adatom mobility through the temperature-dependent thermal vibration. By contrast, the effect of incidence kinetic energy on film growth is complex resulting from the collisions between the incident particles and the adatoms. The results show that improving incident kinetic energy cannot significantly accelerate the migration rate of adatom but change surface microstructure and promote single adatom formation resulting in more island aggregation density. Moreover, since pulse-influx characterizes pulsed laser deposition, the intensity per pulse contributes to the evolvement of nucleation density and the results illustrate that a general scaling law different from ordinary power law still exists in energetic growth of pulsed laser deposition. 相似文献
6.
I. Jarrige 《Solid State Communications》2005,136(1):11-15
The reactivity at the Ni/Si interface is studied as a function of the sputtering conditions of the nickel film. Four systems are considered, by combining two different sputtering rates and two distinct base pressures for the deposition of the nickel 10 nm-thick film. The formation of Ni2Si is revealed at the four interfaces by an X-ray emission spectroscopy study of the interfacial Si 3p occupied valence states. Increasing the sputtering rate is herein evidenced to decrease the quantity of silicide formed at the interface. Moreover, the combination of a high sputtering rate and a low base pressure advantageously prevents against the oxidization of the silicon surface during the metal deposition. 相似文献
7.
Hiroshi Sakurai Fumitake Itoh Katsuyoshi Takano Hiromi Oike 《Journal of Physics and Chemistry of Solids》2004,65(12):2083-2088
A novel technique of measuring a magnetic Compton profile using the grazing angle geometry against a sample surface (Grazing Incidence Magnetic Compton Profile) has been successively developed. Measurements of a magnetic moment and a magnetic Compton profile are possible for a Fe 200 nm film on a thick glass substrate. The estimated thinnest limit for measurements is 100 nm for a Fe film. 相似文献
8.
Resistivity and low field ac susceptibility measurements are made on R: 123 superconducting samples with different rare earth elements R. The order parameter dimensionality OPD is deduced from resistivity versus temperature plot using the Aslamazov and Larkin expression, while the analysis of the temperature dependence of ac susceptibility is done employing Beans’ critical state model and with the help of the Ravi expression. With increasing R, the critical temperatures Tc are nearly kept constant (∼90 K), while the crossover temperatures To are shifted to lower values. Moreover, the superconducting order parameter OPD is shifted toward 2D behavior. On the other hand, the values of superconducting volume fraction fg decrease with increasing ac field amplitude Hm for all samples and it is higher in Er: 123 sample than in Nd: 123 sample. Although the values of critical current density Jc at the peak temperature Tm are nearly unchanged with increasing R, the values of Jc(T), at T<Tm and T>Tm, are found to be dependent on the chosen R. The correlation between the above calculated parameters against R is also mentioned. 相似文献
9.
E.J Onah L Häußler D Voigt C Froeck H Komber B.I Voit K Lunkwitz 《European Polymer Journal》2003,39(1):127-134
Soluble fluorine containing poly(amide-imide)s, PAI(1-4), were synthesized from diimide-dicarboxylic acid, 2,2-bis[N-(4-carboxyphenyl)-phthalimide-1,4-yl]hexafluoropropane with various diamines by direct polycondensation in N-methyl-2-pyrrolidone (NMP) containing CaCl2 and using triphenyl phosphite and pyridine as condensing agents. The polymers were readily soluble in aprotic polar solvents such as NMP, N,N-dimethylacetamide, dimethyl sulfoxide and tetrahydrofuran. Their Langmuir monolayers were studied at the air/water interface. The monolayers were generally stable at the water surface and could be reproducibly transferred onto solid substrates to build up Langmuir-Blodgett (LB) multilayers. The LB mono- and multilayers were characterized by ultra-violet/visible spectroscopy (UV-Vis), surface plasmon resonance, atomic force microscopy. 相似文献
10.
LiMnC2O4(Ac) precursor in which Li+ and Mn2+ were amalgamated in one molecule was prepared by solid-state reaction at room-temperature using manganese acetate, lithium hydroxide and oxalic acid as raw materials. By thermo-decomposition of LiMnC2O4(Ac) at various temperatures, a series of Li1+y[Mn2−xLix]16dO4 spinels were prepared with Li2MnO3 as impurities. The structure and phase transition of these spinels were investigated by XRD, TG/DTA, average oxidation state of Mn and cyclic voltammeric techniques. Results revealed that the Li-Mn-O spinels with high Li/Mn ratio were unstable at high temperature, and the phase transition was associated with the transfer of Li+ from octahedral 16c sites to 16d sites. With the sintering temperature increasing from 450 to 850 °C, the phase structure varied from lithiated-spinel Li2Mn2O4 to Li4Mn5O12-like to LiMn2O4-like and finally to rock-salt LiMnO2-like. A way of determining x with average oxidation state of Mn and the content of Li2MnO3 was also demonstrated. 相似文献