首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   15786篇
  免费   755篇
  国内免费   1116篇
化学   9572篇
晶体学   424篇
力学   263篇
综合类   113篇
数学   4378篇
物理学   2907篇
  2023年   96篇
  2022年   239篇
  2021年   248篇
  2020年   276篇
  2019年   402篇
  2018年   410篇
  2017年   307篇
  2016年   335篇
  2015年   307篇
  2014年   423篇
  2013年   849篇
  2012年   488篇
  2011年   821篇
  2010年   707篇
  2009年   997篇
  2008年   873篇
  2007年   928篇
  2006年   810篇
  2005年   787篇
  2004年   887篇
  2003年   725篇
  2002年   874篇
  2001年   525篇
  2000年   455篇
  1999年   378篇
  1998年   327篇
  1997年   284篇
  1996年   344篇
  1995年   279篇
  1994年   315篇
  1993年   246篇
  1992年   216篇
  1991年   131篇
  1990年   92篇
  1989年   81篇
  1988年   82篇
  1987年   88篇
  1986年   68篇
  1985年   91篇
  1984年   74篇
  1983年   38篇
  1982年   66篇
  1981年   95篇
  1980年   83篇
  1979年   94篇
  1978年   83篇
  1977年   86篇
  1976年   67篇
  1974年   43篇
  1973年   40篇
排序方式: 共有10000条查询结果,搜索用时 46 毫秒
1.
Given their superior penetration depths, photosensitizers with longer absorption wavelengths present broader application prospects in photodynamic therapy (PDT). Herein, Ag2S quantum dots were discovered, for the first time, to be capable of killing tumor cells through the photodynamic route by near-infrared light irradiation, which means relatively less excitation of the probe compared with traditional photosensitizers absorbing short wavelengths. On modification with polydopamine (PDA), PDA-Ag2S was obtained, which showed outstanding capacity for inducing reactive oxygen species (increased by 1.69 times). With the addition of PDA, Ag2S had more opportunities to react with surrounding O2, which was demonstrated by typical triplet electron spin resonance (ESR) analysis. Furthermore, the PDT effects of Ag2S and PDA-Ag2S achieved at longer wavelengths were almost identical to the effects produced at 660 nm, which was proved by studies in vitro. PDA-Ag2S showed distinctly better therapeutic effects than Ag2S in experiments in vivo, which further validated the enhanced regulatory effect of PDA. Altogether, a new photosensitizer with longer absorption wavelength was developed by using the hitherto-unexplored photodynamic function of Ag2S quantum dots, which extended and enhanced the regulatory effect originating from PDA.  相似文献   
2.
3.
4.
5.
6.
Highly position selective alkylations of N-alkylindoles at C7-positions have been enabled by cationic zirconium complexes. The strategy provides a straightforward access to install alkyl groups at C7-positions of indoles without a complex directing group. Mechanistic studies provided support for the importance of Brønsted acids in the catalytic manifold.  相似文献   
7.
非线性互补问题的一种全局收敛的显式光滑Newton方法   总被引:2,自引:0,他引:2  
本针对Po函数非线性互补问题,给出了一种显式光滑Newton方法,该方法将光滑参数μ进行显式迭代而不依赖于Newton方向的搜索过程,并在适当的假设条件下,证明了算法的全局收敛性。  相似文献   
8.
In circuit-switched networks call streams are characterized by their mean and peakedness (two-moment method). The GI/M/C/0 system is used to model a single link, where the GI-stream is determined by fitting moments appropriately. For the moments of the overflow traffic of a GI/M/C/0 system there are efficient numerical algorithms available. However, for the moments of the freed carried traffic, defined as the moments of a virtual link of infinite capacity to which the process of calls accepted by the link (carried arrival process) is virtually directed and where the virtual calls get fresh exponential i.i.d. holding times, only complex numerical algorithms are available. This is the reason why the concept of the freed carried traffic is not used. The main result of this paper is a numerically stable and efficient algorithm for computing the moments of freed carried traffic, in particular an explicit formula for its peakedness. This result offers a unified handling of both overflow and carried traffics in networks. Furthermore, some refined characteristics for the overflow and freed carried streams are derived.  相似文献   
9.
We have studied the individual adsorption of Mn and Bi, and their coadsorption on Cu(0 0 1) by low-energy electron diffraction (LEED). For Mn, we have determined the c(2 × 2) structure formed at 300 K, whose structure had been determined by several methods. We reconfirmed by a tensor LEED analysis that it is a substitutional structure and that a previously reported large corrugation (0.30 Å) between substitutional Mn and remaining surface Cu atoms coincides perfectly with the present value. In the individual adsorption of Bi, we have found a c(4 × 2) structure, which is formed by cooling below ∼250 K a surface prepared by Bi deposition of ∼0.25 ML coverage at 300 K where streaky half-order LEED spots appear. The c(4 × 2) structure has been determined by the tensor LEED analysis at 130 K and it is a substitutional structure. In the coadsorption, we found a c(6 × 4) structure, which has been determined by the tensor LEED analysis. It is very similar to the previously determined structure of the c(6 × 4) formed by coadsorption of Mg and Bi, and embedded MnBi4 clusters are arranged in the top Cu layer instead of MgBi4. Large lateral displacements of Bi atoms in the c(6 × 4)-(Mn + Bi) suggest that the Mn atoms undergo the size-enhancement caused by their large magnetic moment.  相似文献   
10.
The consequences of Ge deposition on Br-terminated Si(1 0 0) were studied with scanning tunneling microscopy at ambient temperature after annealing at 650 K. One monolayer of Br was sufficient to prevent the formation of Ge huts beyond the critical thickness of 3 ML. This is possible because Br acts as a surfactant whose presence lowered the diffusivity of Ge adatoms. Hindered mobility was manifest at low coverage through the formation of short Ge chains. Further deposition resulted in the extension and connection of the Ge chains and gave rise to the buildup of incomplete layers. The deposition of 7 ML of Ge resulted in a rough surface characterized by irregularly shaped clusters. A short 800 K anneal desorbed the Br and allowed Ge atoms to reorganize into the more energetically favorable “hut” structures produced by conventional Ge overlayer growth on Si(1 0 0).  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号