光纤光栅选频掺Yb3+双包层光纤激光器

利用相位掩模法 ,在D形内包层掺Yb3 双包层光纤一端直接写制出Bragg光栅 ,用作双包层光纤激光器的输出腔镜 .试验得到了线宽为 0 196nm ,波长为 10 5 8 2nm ,最高输出功率为 5 70mW的稳定激光输出 ,解决了激光器中模式竞争造成的输出不稳定现象 .从速率方程出发 ,对激光器的输出功率与抽运功率、光栅反射率的关系以及最佳光纤长度进行了理论分析 ,结果与实验符合很好     

Charge manipulation and imaging of the Mn acceptor state in GaAs by cross-sectional scanning tunneling microscopy

An individual Mn acceptor in GaAs is mapped by cross-sectional scanning tunneling microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn²⁺3d⁵+hole) complex. We propose that the observed anisotropy of the Mn acceptor wavefunction is due to the d-wave present in the acceptor ground state.     

稳态锁模产生4ps激光脉冲

首次利用ＧａＡｓ光电导开关，控制Ｎｄ：ＹＬＦ激光器腔内Ｑ值，实现稳态锁模，获得脉宽和能量稳定性极高的４ｐｓ激光脉冲。     

激光二极管抽运的GaAs被动Q开关Nd：YVO4激光器

利用固体可饱和吸收体砷化镓（GaAs）作为被动调Q元件，实现了激光二极管抽运平－凹腔掺钕钒酸钇（Nd:YVO4）激光调Q运转，详细测量了砷化镓被动调QNd:YVO4激光输出特性，获得脉宽15ns，重复频率470kHz，光束质量M^2=1.31的激光输出，调Q激光运转阈值为500mW，并数值求解了砷化镓被动调Q速率方程，讨论了被动调Q机理以及调Q脉冲宽度和脉冲重复频率对抽运速率的依赖关系，理论计算结果与实验结果相一致。     

Photocatalytic degradation of methylene blue on Fe3+-doped TiO2 nanoparticles under visible light irradiation

Fe³⁺-doped TiO₂ composite nanoparticles with different doping amounts were successfully synthesized using sol-gel method and characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and ultravioletvisible spectroscopy (UV-Vis) diffuse reflectance spectra (DRS). The photocatalytic degradation of methylene blue was used as a model reaction to evaluate the photocatalytic activity of Fe³⁺/TiO₂ nanoparticles under visible light irradiation. The influence of doping amount of Fe³⁺ (ω: 0.00%–3.00%) on photocatalytic activities of TiO₂ was investigated. Results show that the size of Fe³⁺/TiO₂ particles decreases with the increase of the amount of Fe³⁺ and their absorption spectra are broaden and absorption intensities are also increased. Doping Fe³⁺ can control the conversion of TiO₂ from anatase to rutile. The doping amount of Fe³⁺ remarkably affects the activity of the catalyst, and the optimum efficiency occurs at about the doping amount of 0.3%. The appropriate doping of Fe³⁺ can markedly increase the catalytic activity of TiO₂ under visible light irradiation. __________ Translated from Journal of Northwest Normal University (Natural Science), 2006, 42(6): 55–56 [译自: 西北师范大学学报(自然科学版)]     

Spectrum analysis of U-doped LaBr3 single crystals. Part 1: crystal-field analysis

Single crystals of U³⁺:LaBr₃ were grown by the Bridgman-Stockbarger technique. High-resolution polarized absorption spectra of the crystals were recorded at 4.2 K in the 4000-50,000 cm⁻¹ range. Sixty-four experimental crystal-field energy levels of the U³⁺ ion were fitted to a semiempirical Hamiltonian employing free-ion, one-electron crystal-field as well as two-particle correlation crystal-field (CCF) operators with an r.m.s. deviation of 28 cm⁻¹. The performed analysis of the spectra enabled the determination of crystal-field parameters and assignment of the observed 5f³→5f³ transitions. The effects of selected CCF operators on the splitting of some specific U³⁺ multiplets have been investigated and the obtained values of Hamiltonian parameters are discussed and compared with those reported in previous analyses.     

Surfaces and interfaces in short-period GaAs/AlAs superlattices

Photoelectron spectroscopy, in particular the angular resolved photoemission excited by ultraviolet radiation (ARUPS), provides the most direct experimental information about the electron structure of crystals, both of the bulk and of the low-index surfaces. The sensitivity of the method, as well as its difficulties, when applied to GaAs/AlAs superlattices are described. The new periodicity of these man-made crystals in the direction of their growth (e.g., in the layer-by-layer growth in molecular beam epitaxy), is responsible for opening of the new energy gaps (so-called minigaps) in the electron energy bands of crystals forming the superlattice. In addition to the well-known confinement of electrons at the valence and conduction band edges in long-period superlattices, the electron confinement to the interfaces has also been found in the vicinity of minigaps in short-period superlattices. The role of this confinement in the intensities of electrons photoemitted from superlattice surfaces is discussed. Superlattices with different thicknesses in the topmost layers represent systems with a simple change of the surface atomic structure. The predictions of one-dimensional models about a change of the surface-state energy within the band gap with a change of crystal potential termination are tested for the ideally terminated (1 0 0) surface of a very thin superlattice (GaAs)₂(AlAs)₂. The results of the energy distributions of photoemitted electrons, calculated in the one-step model of photoemission, show that the ARUPS experimental observation of surface-state shifts should be possible, at least in larger minigaps. The results indicate the possibility of a straightforward tuning of the electronic structure of the superlattice surface by geometrical means.     

Self-Assembly of Gold Nanoclusters on Molecularly Modified GaAs

The elaboration of closed-packed monolayers of Au₅₅(PPh₃)₁₂Cl₆ clusters on oxidized and non-oxidized GaAs surfaces is reported. The first part of this work describes the use of silanethiol modified GaAs oxide surfaces to trap 18 nm gold colloids and Au₅₅(PPh₃)₁₂Cl₆ clusters. The surfaces characterized by AFM measurements present high-quality coverage on a quite long range for both metallic species. The second part is devoted to the elaboration of Au₅₅(PPh₃)₁₂Cl₆ cluster monolayers on non-oxidized p-type GaAs substrates, functionalized with dithiol molecules. AFM measurements demonstrate the presence of closed-packed two-dimensional arrangements of Au₅₅ clusters.     

Hole Burning and Fluorescence Spectra of Sol-Gel Derived Sm2+-Doped Glasses

Sm2+-doped glasses in the system of Al2O3-SiO2 were prepared by sol-gel processing of metal alkoxides and reacting with H2 gas at 800°C. The hole burning properties of these glasses were investigated. The holes were burned in the 7F0 5D0 line of the Sm2+ ions using a DCM dye laser at 77 K. The hole depth increased with increasing the laser irradiation time, reaching up to 15% of the total intensity within a few hundred seconds. The hole width was 3 cm–1 full width at half maximum. Fluorescence line narrowing spectra of the 5D0 7 F1 transition were analyzed to study the local structure surrounding the Sm2+ ion. It is concluded that the Sm2+ ions are closely coordinated with nine oxygens of the AlO6 group in aluminosilicate glasses and that the addition of Al3+ ions into glass induces an increase in the coordination number of the Sm2+.     

Structural characterization techniques for the analysis of semiconductor strained heterostructures

A combined method for structural characterization of strained epitaxial heterostructures involving different techniques such as Rutherford backscattering spectrometry (RBS), multiple crystal X-ray diffractometry (MCD) and transmission electron microscopy (TEM) is presented. In order to obtain a complete characterization of the analysed structure, three different quantities are measured independently: the epilayer thickness, the density of misfit dislocations which may appear at the interface, and the significant components of the strain tensor, mainly the tetragonal distortion, affecting the epilayer lattice. In this way the thermodynamic state and the mechanisms of plastic deformation of the structures can be fully investigated. In this contribution we present and discuss the experimental results concerning a set of InP/GaAs samples having different layer thicknesses ranging from 5 to 500 nm. The thickness of the samples has been determined by RBS. Measurements of in-plane strain and tetragonal distortion have been performed by MCD and RBS-channelling respectively, finally TEM has been used for determining the defects densities and distribution.