Effect of Hydrogen Implantation on SIMOX SOI Materials

Hydrogen ions were implanted into separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) wafers near the oxygen-implantation-induced damage peak under different conditions of energy and dose. It was found that the implanted hydrogen ions not only accelerate the diffusion of oxygen atoms from the annealing ambience into the wafer but also cause an outward diffusion of oxygen atoms in the buried oxide (BOX) layer. Thus, greatly broadened buried oxygen-rich (BOR) layers were formed in our experiments, which are 18%-79% broader than the BOX layer of standard SIMOX SOI wafers under the same conditions of oxygen implantation. The mechanism was discussed. A potential low cost method to fabricate SIMOX SOI wafers is proposed.     

Unusual Transport Properties near the Insulator-Metal Transition in Colossal Magnetoresistive Manganites

It is argued that a combination of the Griffiths theory and the double-exchange mechanism predicts the random distribution of ferromagnetic metallic clusters above the Curie temperature TC in colossal magnetoresistive manganites. Along this line, we propose a model for the temperature dependence of resistivity that yields a quantitative agreement with experimental data obtained in a typical manganite La2/3Ca1/3MnO3. Our result indicates that the formation and growth of ferromagnetic metallic clusters are responsible for the observation of unusual transport properties near the insulator-metal transition.     

绝缘表面和气体导电与湿度的关系

湿度对绝缘体表面电导和气体电导有一定的影响，但通常在湿度传感器的研究中忽略了气体电导的贡献。本文通过特殊设计装置来区分表面电导和气体电导，并分别从实验和理论上进行了定性的研究。     

离子辐照引起的金属／绝缘体界面混合与相变研究

载能离子穿过固体界面引起界面原子迁移使界面原子混合和物质成分变化，从而导致界面发生材料相变。简要介绍了载能离子辐照引起金属／绝缘体界面混合效应及相变现象的主要实验研究进展、低能离子和高能离子辐照引起金属／绝缘体界面现象差异，并对离子辐照引起界面混合及相变的机制进行了初步探讨。When penetrating an interface between two kind of solids, energetic ions can induce atomic diffusion at both sides of the interface and then result in intermixing, atom re-distribution or composition change, as well as phase transformation. Main progress on the study of intermixing and phase change at metal/insulator interface induced by energetic ion irradiations, the difference of phenomena occurred at metal/insulator interfaces induced by high-and low-energy ions were briefly reviewed. Furthermore, the possible mechanisms related to intermixing and phase change at metal/insulator interface produced by energetic ion irradiations were also discussed in short words.     

Eu2-xPbxRu2O7中的金属-绝缘体相变和自旋玻璃态行为

通过对Eu2-xPbxRu2O7(x=0.0, 0.2, 0.4, 0.6, 0.8, 1.0和1.8)系列样品的结构、电阻和磁化率的观测,结果发现,随着Pb替代浓度x值的增加,样品的电阻率逐渐减小,系统在x=0.8附近发生了金属-绝缘体(M-I)相变;Ru4+的局域磁矩及其自旋玻璃冻结温度TG也随之降低. 在该体系中,Pb2+对Eu3+的部分替代使样品中载流子浓度增加,Pb的6p能带与Ru 4d电子的T2g能带混合,能带得以拓宽,Ru 4d电子的巡游性增强,导致该体系物性的系列变化.     

化合物半导体-绝缘体界面的界面态(续)

 三、界面态连续体的动态响应和分布多年来的大量研究结果表明把界面态处理为局域在半导体界面平面处的经典理论完全不能够解释化合物半导体-绝缘体界面的行为特点,从而使人们逐渐认识到界面态的空间分布特征.图3为半导体界面的能带结构示意图.在实际的I-S界面上,界面态是在绝缘体-半导体界面附近,在能量上和空间上的连续分布体(如图中点所示). 这里以n型半导体为例,通过绝缘体中的界面态对电子的捕获和发射过程说明界面态动态响应的特点.由于势垒△Ec的存在,空间分布的界面态与电子的作用只能依介量子力学的隧道效应得以进行.     

Abnormal Modulation of Dielectric Band Transmittance of Polystyrene Opal

The abnormal transmittance in the dielectric band edge of a polystyrene opal is observed and analysed. The transmittance is periodically modulated and the period of modulation varies with the wavelength, which destroys the perfect structure of the photonic band gap. The transmittance modulation originates from the propagation of the low order whispering-gallery mode excited in polystyrene spheres. These results indicate that the whisperinggallery mode has a great influence on practical applications of polystyrene opal.     

纳米技术新秀:单原子晶体管

 美国康奈尔大学的一个科学家小组研制成由一个钴原子构成的晶体管,钴原子包裹有一层复杂有机化合物,直径仅为10纳米的黄金导线被放置在硅片上,并用这种有机化合物覆盖住。然后在导线上钻一个直径约为1纳米的小孔,制成电源电极和电流电极,再将带有钴原子的有机化合物放置在小孔上,用二氧化硅作绝缘体。哈佛大学另一组科学家也用类似方法研制成单原子晶体管,他们是在黄金电极上放置钒分子,而用氧化铝作绝缘体。单原子或单分子晶体管研究表明,只有在加上一定电压时电流才会通过这类晶体管。此外,将它们放置在磁场中时,通过电流中的电子数量会增加。     

A Two-Dimensional Photonic Crystal Slab Mirror with Silicon on Insulator for Wavelength 1.3μm

A concrete two-dimensional photonic crystal slab with triangular lattice used as a mirror for the light at wavelength 1.3μm with a silicon-on-insulator （SOI） substrate is designed by the three-dimensional plane wave expansion method. For TE-like modes, the bandgap in the Г-K direction is from 1087nm to 1559nm. The central wavelength in the bandgap is about 1.3μm, hence the incident light at wavelength 1.3μm will be strongly reflected. Experimentally, such a photonic crystal slab is fabricated on an SOI substrate by the combination of EBL and ICP etching. The measurement of its transmission characteristics shows the bandgap edge in a longer wavelength is about 1540 nm. The little discrepancy between the experimental data and the theoretical values is mainly due to the size discrepancy of the fabricated air holes.     

通过一类一维链的透射和反射

本文建立了平面波ε－ｉｋｘ（波数ｋ＞０）通过势ｖ（ｘ）＝ｖｎδ（ｘ－ｘｎ），Ｎ→∞时透射振幅和反射振幅的速推公式；给出系统为绝缘体的充要条件；最后，作为应用，对一类线性递归链，研究了系统的导通性及绝缘性．