电光全内反射调制

研究各种无侵袭电光采样技术,尤其是研究电信号在半导体中的传播技术是有意义的。通常是根据施加电场所引起的寻常光线和非常光线的指数变化来讨论电光效应,这种变化与外加电场成正比。调制电场和光场之间电光晶体中的相互作用产生光场的垂直分量。把电光晶体放在交叉偏振器之间,这种效应可以转换为一种强度调制。     

用可变电阻调压与可变电阻的选择

如图电路1和电路2可变电阻尺的接法不同。RL为负载电阻，E为电源电动势（设内阻为0），S为开关。     

Diode-Pumped Self-Q-Switched Cr,Nd：YAG Laser with High Average Output Power

A diode end-pumped self-Q-switched Cr,Nd:YAG laser was established with pulse duration in the range of 8-10ns. The maximum average output power was 4.4 W and the slope efficiency was 27% using an output coupler of R=70%. At pumping power of 17.4 W the laser produces high-quality pulses at 1064 nm in a TEMoo-mode.     

旋光性与电光效应交互作用及其对旋光晶体电光Q开关的影响

研究了晶体的旋光性与电光效应的交互作用、以及此交互作用对 旋光晶体电光Q开关的影响. 关键词： 旋光性 电光效应 电光Q开关 3Ga₅SiO₁₄晶体')" href="#">La₃Ga₅SiO₁₄晶体     

利用爆磁压缩发生器产生高功率脉冲高电压

 爆磁压缩发生器产生脉冲高电压技术可以用于产生高功率微波及强电磁脉冲的实验研究。给出了利用螺旋型爆磁压缩发生器（HEMG）驱动电爆炸丝功率调节系统产生高功率脉冲高电压的实验方法和主要的结果。在利用HEMG驱动电爆炸丝断路开关（EEOS）产生脉冲高电压实验中，获得了最高电压700~800kV,功率大于20GW的脉冲输出。     

光电倍增管脉冲性能研究

采用外腔式电光开光,调制主动照相探测光源,使光电倍增管处于脉冲工作状态下,以提高光电倍增管的输出幅度和动态范围,改善信号的信噪比,同时避免样品和探测器受长时间强激光照射.对滨松H6780光电倍增管进行了调试,使其线性输出电流由静态的0.1mA提升到脉冲状态的4.4mA,信噪比提高4.5倍.该技术对其他光敏探测有借鉴意义.     

Performance of the Self—Q—Switched Cr,Yb：YAG Laser

We report on the spectral properties of Cr,Yb:YAG crystal co-doped with 0.025 at.% Cr and 10 at.% Yb are reported.Using a continuous wave Ti:sapphire laser as a pumping source,we have demonstrated the self-Q-switched Cr,Yb:YAG laser at room temperature.We obtained an average output power as much as 75mW at 1.03μm with a pulse width (FWHM)as short as 0.4μs.The laser experiment demonstrated that the Cr,Yb:YAG crystal exactly combines the Cr^4 saturable absorber and Yb^3 gain medium.The Cr,Yb:YAG crystal can be a most promising self-Q-switched laser crystal for compact and efficient solid-state lasers.     

开关布局中本质不同的开关线路计算

通过对开关布局问题的研究，来解决一类象开关线路一样比较特殊，比较复杂的布局优化问题。从而寻找出这类问题的全局优化算法。本应用对称群对集合的作用，轨道，不动点等讨论了开关布局问题，给出了本质不同的开关线路个数的计算公式。     

小型高压冷阴极触发管性能分析

触发管作为一种高压开关，基于其导通时间短，可承受数千安培脉冲电流等特点被广泛应用于触发器、快脉冲产生器及大电流脉冲发生器中。随着系统精良小型化的发展需求，相应对触发管导通时间、脉冲电流和导通时间晃动等参数也提出了更高的要求。     

Antiphase State in Passively Q-Switched Yb：YAG Microchip Lasers with a Nd,Cr：YAG as Saturable Absorber

We experimentally investigate the antiphase dynamics phenomenon that occurs in a diode-pumped passively Q-switched Yb:YAG multimode laser with a Nd,Cr:YAG saturable absorber. Due to the effect of spatial hole burning, the multimode lasers with one, two, or three modes at different pump power are observed, and the pulses sequences display classic antiphase dynamics.