High index of refraction via quantum interference in a three-level system of Er^3＋-doped yttrium aluminium garnet crystal

A simple three-level system is proposed to produce high index of refraction with zero absorption in an Er^3＋-doped yttrium aluminium garnet （YAG） crystal, which is achieved for a probe field between the excited state 4I13/2 and ground state 4I15/2 by adjusting a strong coherent driving field between the upper excited state 4I11/2 and 4I15/2. It is found that the changes of the frequency of the coherent driving field and the concentration of Er^3＋ ions in the YAG crystal can maximize the index of refraction accompanied by vanishing absorption. This result could be useful for the dispersion compensation in fibre communication, laser particle acceleration, high precision magnetometry and so on.     

第1届掺杂纳米材料发光性质学术会议纪要

由中国物理学会发光分会、中国稀土学会发光专业委员会主办，中国科学院激发态物理重点实验室承办，海南大学理工学院协办的第1届掺杂纳米材料发光性质学术会议于2006年11月5～7日在海南省海口市举行。这是国内外举办的首次掺杂纳米发光材料方面的专题学术研讨会。来自全国20个省市49个单位、香港地区（3人）以及美国（2人）、荷兰（1人）的专家学者总计100余人出席了此次会议。会议共收录论文摘要101篇，其中大会邀请报告8篇、分会邀请报告12篇、口头报告36篇、张贴报告45篇。内容涉及到：新型纳米发光材料与新的纳米合成、组装技术；纳米材料发光中的激发态过程；上转换纳米发光材料；纳米材料中的限域效应、表面效应及其诱导的新现象；表面修饰与核壳结构的纳米材料；一维纳米材料线、管及纳米薄膜的结构与发光性质；掺杂纳米材料发光中的新概念、新理论.     

B_2分子X~3Σ_g~-和A~3Σ_u~-态的势能函数

使用SAC/SAC-CI方法,利用D95(d),6-311g**以及cc-PVTZ等基组,对B2分子的基态(X3Σg-)和第一激发态(A3Σu-)的平衡结构和谐振频率进行了优化计算.通过对3个基组的计算结果的比较,得出了D95(d)基组为3个基组中的最优基组的结论;使用D95(d)基组,利用SAC的GSUM(Group Sum of Operators)方法对基态(X3Σg-),SAC-CI的GSUM方法对激发态(A3Σu-)进行单点能扫描计算,用正规方程组拟合Murrell-Sorbie函数,得到了相应电子态的完整势能函数;从得到的势能函数计算了与基态(X3Σg-)和第一激发态(A3Σu-)相对应的光谱常数(Be,αe,ωe和ωeχe),结果与实验数据吻合.     

光压效应及其应用

 一、光压效应光的本质是电磁波,电磁波不仅具有能量,而且具有动量。设光子速度为c,频率为v,波长为λ,则光子的能量和动量分别为:E=hv.     

Micro-Photoluminescence Investigation of Single Quantum Dot and its Molecule of CdSe/ZnSe

The single and a few coupled quantum dots are important for future quantum information sciences and their investigation is also a big challenge in physics. We investigate here the electronic and exciton states and their interaction with each other via micro photoluminescence. The luminescence for single and a few dots as well as a dot molecule of CdSe/ZnSe are measured with very high resolution, under liquid He temperature and magnetic fields and with different polarization of excitation laser. The observed sharp spectral lines are attributed to the atomlike transitions of exciton, trion, biexciton… in the investigated single QD or QD molecule. Band filling, Zeeman splitting, spin transition and their relaxation are observed and investigated＇from the spectra and compared with those of same material in different dimensions, and compared with the primary calculation as well. In addition, quite a few new phenomena, which can not be understood based on our present model and knowledge, are also observed; and some very interesting problems are left for further investigation.     

Advances in micro-perforated panel absorbers

Theoretical and experimental investigations on the performance of micro-perforated -panel absorbers are reviewed in this paper. By reviewing recent research work, this paper reveals a relationship between the maximum absorption coefficient and the limit of the absorption frequency bandwidth. It has been demonstrated that the absorption frequency bandwidth can be extended up to 3 or 4 octaves as the diameters of the micro-holes decrease. This has become possible with the development of the technologies for manufacturing micro-perforated panels, such as laser drilling, powder metallurgy, welded meshing and electro-etching to form micrometer order holes. In this paper, absorption characteristics of such absorbers in random fields and in high sound intensity are discussed both theoretically and experimentally. A new absorbing structure based on micro-perforated-panel absorbers demonstrate experimentally high sound absorption capability. This review shows that the micro-perforated-panel absorber has potentials to be one of ideal absorbing materials in the 21st century.     

FeS2多晶薄膜电子结构的实验研究

用磁控溅射方法制各纯Fe薄膜,并硫化合成FeS2.采用同步辐射X射线近边吸收谱与X射线光电子能谱研究了薄膜的电子结构.结果表明,合成的FeS2薄膜,在费米能级附近,有较强的Fe 3d态密度存在,同时,在价带谱中2-10eV处有强度较大的S 3p态密度存在;Fe的3d轨道在八面体配位场作用下分别为t2g和eg轨道,实验中由Fe的吸收谱计算得到两分裂能级之差为2.1eV;实验测得FeS2价带结构中导带宽度约为2.4eV,导带上方仍存在第二能隙,其宽度约为2.8eV.     

离子交换富集-导数火焰原子吸收法测定自来水中Cu,Fe和Zn

本文研究了用 2 0 1× 7阳离子交换树脂对自来水中的微量元素进行交换富集 ,采用微量脉冲进样 导数火焰原子吸收法测定富集后溶液中的Cu ,Fe和Zn ,该方法灵敏度分别为 0 2 9,0 5 9和 0 0 6 μg·L- 1 ,精密度分别为 4 2 8% ,1 95 %和 2 2 8% ,检测限分别为 1 2 8,5 85和 0 6 8μg·L- 1 ,回收率分别为 91 13% ,10 1 34%和99 84 % ,本方法大大减少了需样量 ,简便快速 ,灵敏度高。     

A Quasi-Symmetric Coupled Quantum Well and Its Electric-Optical Properties

We propose a novel coupled quantum well structure, i.e. a quasi-symmetric coupled quantum well (QSCQW). Based on the demands of optical switching devices for quantum well materials, the QSCQW configuration is further optimized. Consequently, in the case of low applied electric field 25kV/cm and low absorption loss 100cm^-1, a large field-induced refractive index change (for TE mode, n = 0.0106; for TM mode, n = 0.0115) is obtained in the QSCQW structure at the operation wavelength 1550hm. The value is in one or two order of magnitude larger than that in a rectangular quantum well and about 50% larger than that of five-step asymmetric coupled quantum well structure under the same working conditions. The refractive index change obtained with the optimized QSCQW under so low absorption loss and applied electric field is very attractive for semiconductor optical switching devices. This manifests that the QSCQW structure has a great potential for applications in ultra-fast and low-voltage optical switches and in travelling wave modulators.     

Ultraviolet Luminescence in Mg0.12Zn0.88O Alloy Films

We investigate the origin of ultraviolet （UV） emission from Mg0.12 Zn0.88 O alloy thin films with a wurtzite structure fabricated on c-plane Al2O3 substrates by plasma assisted molecular beam epitaxy. At room temperature, the absorption edge and UV emission band of the Mg0.12Zn0.88O film shift to high-energy side compared with ZnO films. Temperature dependence of the photoluminescence spectra shows that the UV emission is composed of free exciton and neutral donor bound exciton emissions. Two-step dissociation processes of the UV emission are observed with the increasing temperature. The thermal quenching mechanism is attributed to the dissociation of the free exciton from the neutral donor bound exciton in the low temperature region and the dissociation of free electron and hole from the free exciton in the high temperature region.