An optical study of the D-D neutron irradiation-induced defects in Co-and Cu-doped ZnO wafers

Room-temperature photoluminescence and optical transmittance spectroscopy of Co-doped(1×1014,5×1016,and 1×1017cm-2) and Cu-doped(5×1016cm-2) ZnO wafers irradiated by D-D neutrons(fluence of 2.9×1010 cm-2) have been investigated.After irradiation,the Co or Cu metal and oxide clusters in doped ZnO wafers are dissolved,and the wu¨rtzite structure of ZnO substrate for each sample remains unchanged and keeps in high c-axis preferential orientation.The degree of irradiation-induced crystal disorder reflected from the absorption band tail parameter(E0) is far greater for doped ZnO than the undoped one.Under the same doping concentration,the Cu-doped ZnO wafer has much higher irradiation-induced disorder than the Co-doped one.Photoluminescence measurements indicate that the introduction rate of both the zinc vacancy and the zinc interstitial is much higher for the doped ZnO wafer with a high doping level than the undoped one.In addition,both crystal lattice distortion and defect complexes are suggested to be formed in doped ZnO wafers.Consequently,the Co-or Cu-doped ZnO wafer(especially with a high doping level) exhibits very low radiation hardness compared with the undoped one,and the Cu-doped ZnO wafer is much less radiation-hard than the Co-doped one.     

SiC单晶片的取向研磨

优质晶体生长常常需要籽晶或衬底偏离常规结晶取向.为便于按任意偏向角度研磨晶片,本实验室设计并应用了晶片取向研磨夹具及相应的研磨工艺.本文介绍了该夹具和工艺的工作原理、技术要点以及对技术指标的鉴定情况.测试结果表明,研磨取向误差范围可控制在5;之内,研磨片厚度偏差小于5 μm、粗糙度Ra=0.12 μm.     

超薄LiTaO3晶片的键合减薄技术

在制造红外热释电探测器阵列过程中，需要利用超薄钽酸锂(LiTaO₃)晶片作为红外热释电探测器件的敏感层。通常LiTaO₃晶片的厚度远厚于红外热释电探测器件要求的厚度，所以需要采用键合减薄技术对LiTaO₃晶片进行加工处理。键合减薄技术主要包括：苯并环丁烯（BCB）键合、铣磨、抛光、加热剥离、刻蚀BCB。加工后得到面积为10mm×10mm、厚度为25μm的超薄单晶LiTaO₃薄膜，晶片厚度、表面粗糙度和面形精度比较理想。测得了LT晶片减薄后的热释电系数为1.6×10^-4Cm^-2K^-1。得到的单晶LiTaO₃薄膜满足红外热释电探测器敏感层的要求。     

Magnetic Tunnel Junctions with MgO／Al-O Composite Barriers

Magnetic tunnel junctions (MTJs) with structures of Ta(5 nm)/Cu(30nm)/Ta(5 nm)/Ni79Fe21 (5 nm)/Ir22Mn78 (12 nm)/Co62Fe20B18 (4 nm)/MgO(d)/Al(0.8 nm)-oxide/Co62Fe20B18 (6 nm)/Cu(30 nm)/Ta(5 nm) on a thermally oxidized Si wafer substrate were fabricated by magnetron sputtering and photolithographic patterning method. The tunnel magnetoresistance (TMR) and the bias dependence of TMR at room temperature for the MTJs with different thickness d of MgO are investigated. TMR values of over 50% as high as those of the MTJs with pure Al-O barrier and the TMR-voltage curve asymmetries, which vary with the increase of d, are observed in the MTJs with hybrid barriers after annealing at 265℃ for an hour. The dependences of TMR, resistance and coercivity of the MTJs with composite barriers on temperature are also investigated.     

直接键合InP-GaAs结构界面的特性研究

通过对直接键合InP-GaAs结构的红外吸收光谱分析以及断面扫描电子显微镜观察发现，样品制备过程中不均匀的外加压强导致InP-GaAs交界面局部出现了不连续过渡的空间层，实验上将熔融石蜡渗透并被填充到该空间层，利用其对3.509μm波长光的强烈吸收特性可表征 这种局部的键合不连续区域，二维扫描测试样品不同区域的吸收谱得到3.509μm波长吸收强 度等值线图，从而描绘出外加压强的不均匀分布.实验上通过改进键合装置的施压均匀性， 得到了连续过渡界面且均匀键合的InP-GaAs结构，利用这种均匀键合技术有望制备大尺寸器 件例如光学微腔等. 关键词： 晶片直接键合 界面 红外吸收光谱     

Sound absorption characteristics of a thin plate with PZT and shunt circuit I. Theoretical analysis

The feasibility of sound absorbing by a vibrating plate with piezoelectric material and shunt circuits is theoretically investigated. Based on an equivalent compliance of a piezoelectric wafer shunted with RL circuits, the governing equations for the fiexural vibration of the plate with the piezoelectric wafer are derived using Lagrange＇s approach. The equations take into account not only the mass, stiffness and structural damping of the plate and the wafer, but also the electrical resistance and electrical inductance of the RL circuits. By using the governing equations derived, the surface impedance and sound absorption coefficient of the plate backed with a cavity are given. Numerical results show that the sound absorption coefficient of the plate near its first mode can be significantly improved by adjusting the RL parameters.     

半导体晶片Fe/Ni玷污的紫外荧光谱研究

针对Si,GaAs半导体晶片中金属杂质玷污的问题,本文提出了紫外光致荧光谱的检测方法。常温下,晶片中的Fe,Ni杂质玷污可产生紫外特征荧光峰。这种新的检测方法是非破坏性的,并适用于φ76.2mm,φ100mm大圆片的直接检验,而且具有较高的检测灵敏度。     

利用光斑图像特征确定飞秒激光有效烧蚀焦距

为确定飞秒激光光束对微尺度结构的烧蚀深度,研究了给定功率条件下对应的激光束有效烧蚀焦距。提出采用激光焦点处获得的烧痕阵列图像及在离焦状态下提取烧痕图像特征,通过分析图像特征与离焦距离,获得激光束有效烧蚀焦距范围的方法。在激光束焦点附近的硅晶片表面烧蚀出斑痕阵列,向下逐渐减小焦距,采集硅晶片斑痕图像,提取斑痕平均像素面积及斑痕目标与背景之间的R分量灰度差,获得斑痕像素面积及灰度差随激光束焦距变化的曲线;向上逐渐增大焦距,提取并获得斑痕像素面积及灰度差随激光束焦距变化的曲线。结合激光束向下离焦阈值(633 μm)及向上离焦阈值(993 μm),确定20 mW输出功率条件下,飞秒激光在硅晶片材料表面的有效烧蚀深度为360 μm。采用中位值方法确定了激光束在硅晶片表面聚焦时的焦距为0.823 mm。实验表明,激光烧蚀斑痕像素面积及灰度差与激光束焦距之间的关系能够客观地反映激光束有效烧蚀焦距的变化范围。