“神龙一号”注入器研制

“神龙一号”注入器是直线感应加速器的束流源，它采用了感应叠加的高压加载方式，包括脉冲功率系统、感应腔、阴阳极杆、绝缘支撑、二极管和束流传输系统等子系统. 在研制中采用了径向绝缘支撑、对中支撑调节系统、类Pierce阴极等先进技术，以及二极管线圈内置和外径为800mm的铁氧体大环等创新. 参数测试显示，3.5MeV注入器达到了世界先进水平.     

双阳极磁控注入枪束流特性的研究

 介绍了用于34GHz基波回旋速调管的双阳极磁控注入枪的结构特点，为了准确分析磁控注入枪的束流特性，建立了阴极表面理论模型，用新编制的程序模拟了电子轨迹。模拟和测量结果显示磁场对磁控注入枪的束流有影响，磁控注入枪的束流也与阴极温度和空间电荷效应有关系。     

Effect of Hydrogen Implantation on SIMOX SOI Materials

Hydrogen ions were implanted into separation by implantation of oxygen (SIMOX) silicon-on-insulator (SOI) wafers near the oxygen-implantation-induced damage peak under different conditions of energy and dose. It was found that the implanted hydrogen ions not only accelerate the diffusion of oxygen atoms from the annealing ambience into the wafer but also cause an outward diffusion of oxygen atoms in the buried oxide (BOX) layer. Thus, greatly broadened buried oxygen-rich (BOR) layers were formed in our experiments, which are 18%-79% broader than the BOX layer of standard SIMOX SOI wafers under the same conditions of oxygen implantation. The mechanism was discussed. A potential low cost method to fabricate SIMOX SOI wafers is proposed.     

准粒子注入下超导膜能隙变化的一些计算

利用 Schn-Tremblay 理论计算了 Pb、Sn 超导薄膜在注入准粒子且注入电压很小(ev<2△(?))时的能隙微小增加的效应.同时,把此理论扩展到 ev>>2△_i 的大电压情况,计算出能隙明显减小及超导-正常混合态的结果.     

多发弹丸发射系统阀门电源及可编程发射控制器的研制

多发弹丸发射系统是我院20世纪90年代从俄罗斯引进的设备，用于发射弹丸的快阀门电源属于非标产品，其备件缺乏，维修困难。为保证HL-2A装置弹丸注入实验顺利进行，根据设计要求，研制了这套弹丸快阀电源和可编程发射控制器。它们之间的连接如图1所示。     

CCD狭缝摄象

在过去的几十年中,各靶场已广泛应用狭缝摄影对种种飞行弹丸的多项重要技术参数进行测试,它在许多测试项目中应用的有效性、广泛性和经济性已被人们所肯定。据报道,在国外的一些靶场所进行的发射试验中,狭缝摄影机曾占全部测试设备中所使用的摄影仪器的百分之九十,这是因为狭缝摄影有其独特的、其它方法不可比拟的优点。     

Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation

Patterned silicon nanocrystallite (SINC) films were fabricated on (100) orientation p-type boron-doped sificon wafer by the hydrogen ion implantation technique and the anodic etching method. The efficient field emission with low turn-on field of about 3.5V/μm at current density of 0.1μA/cm^2 was obtained. The emission current density from the SiNC films reached 1mA/cm^2 under a bias field of about 9.1V/μm. The experimental results demonstrate that there are great potential applications of the SiNC films for fiat panel displays. A surface treatment with hydrogen plasma was performed on the SiNC films and a significant improvement of emission properties was achieved.     

HIRFL注入器PIG离子源的研制

本文介绍了兰州重离子加速器(HIRFL)的注入器(SFC)所用PIG离子源的研制和改进工作,使用新研制的PIG源,已在注人器SFC上获得了5μA的O_(16)~(5+)及10μA的C_(16)~(4+)的离子束。     

真空注入法在功能性食品加工中的试验研究

功能性食品是除具有原有的营养功能外,还具有一种或多种能够提高人的健康状况或防治疾病的靶向功能。真空注入法是一种新型的功能性新鲜果蔬的生产方法,可以在多孔产品中注入任何成分,以调整产品组成。在真空注入过程中,温度、溶液浓度和真空处理时间是影响注入量的重要参数,本文研究了这三个参数对真空注入强化萝卜钙含量的影响。