电光全内反射调制

研究各种无侵袭电光采样技术,尤其是研究电信号在半导体中的传播技术是有意义的。通常是根据施加电场所引起的寻常光线和非常光线的指数变化来讨论电光效应,这种变化与外加电场成正比。调制电场和光场之间电光晶体中的相互作用产生光场的垂直分量。把电光晶体放在交叉偏振器之间,这种效应可以转换为一种强度调制。     

非晶调制多层膜Nb/Si中的互扩散研究

利用原位Ｘ射线衍射技术得到非晶调制多层膜Ｎｂ／Ｓｉ中的互扩散系数与退火温度的关系，调制周期Ｌ＝３.２ｎｍ的非晶调制多层膜是用粒子溅射方法制备的．温度范围为４２３—５２３Ｋ的有效互扩散系数通过原位测量多层膜的一级调制峰强度与退火温度之间的关系而得到．利用缺陷陷阱延迟扩散机制解释了所得到的扩散系数与退火温度的关系．建立了可以解释较小前置系数的模型 关键词：     

稀掺杂GaNxAs1－x(x≤0.03)薄膜的调制光谱研究

利用室温下压电调制反射光(PzR)谱技术系统测量了N掺杂浓度为0.0%—3%的分子束外延生长GaN_xAs_1-x薄膜，并对图谱中所观察的光学跃迁进行了指认.在GaN_0.005As_0.995和GaN_0.01As_0.99薄膜的PzR谱中观察到此前只在椭圆偏振谱中才看到的N掺杂相关能态E₁+Δ₁+Δ_N.当N掺杂浓度达到 关键词： 压电调制反射光谱(PzR) xAs_1-x薄膜')" href="#">GaN_xAs_1-x薄膜 分子束外延(MBE)     

液体变焦透镜简介

 关于电化毛细管作用的研究始于1875年,李普曼(G.Lippmann)在当时用相关理论来解释对浸在电解液中的水银滴表面施加电压时其形状发生变化这种现象。弗洛姆金(A.Froumkine)用同样的原理解释了电解液体表面的净电荷会改变其与金属表面张角的现象,也就是所谓的电湿润过程。最近,一个巧妙的实验更加形象地展示了这种过程,从而将其应用进行了推广,并使用水银液滴对传感器和光学开关进行了测试。     

高速数字通信用SAW(声表面波)滤波器

近年来,数字通信一直努力在给定的无线电频带内尽量提高传输信号的比特速率。多层调制的正交调幅(QAM)可以满足这一要求,具有很高的波谱效率,且调制电平层次越多,谱效率越高。但这种调制方式对系统中使用的几乎所有元器件都提出了高要求。特别是为了降低误比特率,对频谱形成滤波器的要求很     

ZnS∶Zn,Pb蓝粉在低压阴极射线激发下的应用

通过对ZnS∶Zn,Pb蓝色荧光粉进行表面包覆SiO2以改善其稳定性;In2O3材料的适量混合,提高了荧光粉的导电性,降低了它的起辉电压。采用沉淀法制备荧光屏,考察了阳极电压和阳极电流对亮度以及衰减过程的影响,实验结果表明ZnS∶Zn,Pb的性能优于ZnS∶Ag,Cl和ZnS∶Zn,可适用于FED等低压显示器。     

Effect of Ag Doping on Optical and Electrical Properties of ZnO Thin Films

ZnO thin films were prepared on p-type Si (100) substrates by the sol-gel process. The influence of Ag doping at a content of 0.002% on the photoluminescence and current-voltage (I - V) characteristics of ZnO thin films has been investigated. It is found that Ag doping leads to a pronounced increase in the intensity of near band edge emission at 3.23eV and a remarkable red shift of the visible broadband at room temperature. The I - V characteristics of ZnO/p-Si heterojunctions are also changed. These results could be explained by Ag substituting for Zn in Ag doped ZnO thin films.     

Von Neumann Entropy of an Electron in One-Dimensional Determined Potentials

By using the measure of von Neumann entropy, we numerically investigate quantum entanglement of an electron moving in the one-dimensional Harper model and in the one-dimensional slowly varying potential model. The delocalized and localized eigenstates can be distinguished by von Neumann entropy of the individual eigenstates.There are drastic decreases in von Neumann entropy of the individual eigenstates at mobility edges. In the curve of the spectrum averaged von Neumann entropy as a function of potential parameter λ, a sharp transition exists at the metal-insulator transition point λc = 2. It is found that the von Neumann entropy is a good quantity to reflect localization and metal-insulator transition.     

A Compact Magnetically Insulated Line Oscillator with New-Type Beam Dump

We present a compact improved model of the magnetically insulated line oscillator with new-type beam dump and other novel features. In the experiments, high-power microwave of the TM01 mode is generated from the device with a frequency range of 1.73-1.78 GHz and a peak power level of above 2 GW, when the diode voltage is taken in the range 520-540kV, and the diode current is in the range 58-62kA. This confirms the simulation results.