Ultraslow phonon-assisted collapse of tubular image states

We predict ultraslow collapse of “tubular image states” (TIS) on material surfaces. TIS are bound Rydberg-like electronic states formed at large distances (∼30 nm) from the surfaces of suspended circularly-symmetric nanowires, such as metallic C nanotubes. The states are formed in potential wells, resulting from a combination of the TIS-electron attraction to image charges in the nanotube and its centrifugal repulsion, caused by spinning around the tube. We demonstrate that TIS can collapse on the tube surface by passing their angular momentum l to circularly polarized flexural phonons excited in the tube. Our analysis shows that for highly detached TIS with l ? 6 the relaxation lifetimes are of the order of 10 ns-1 μs, while for l < 6 these lifetimes are reduced by several orders of magnitude.     

基于CSCW的协同编著系统的设计

讨论了计算机支持的协同工作(CSCW)的主要技术，其中重点讨论了协同编著系统设计中的并发控制技术，指出了其与传统的并发控制技术的区别。根据CSCW的基本原理设计出了一个基于Browse／Server结构的协同编著系统的系统模型。该系统模型比传统的模型更加方便了用户之间通过Internet的浏览器进行协作。     

Bounds to optimal burn‐in and optimal work size

Burn‐in is a widely used method to improve the quality of products or systems after they have been produced. In this paper, we consider the problem of determining the optimal burn‐in time and optimal work size maximizing the long‐run average amount of work saved per time unit in the computer applications. Assuming that the underlying lifetime distribution of the computer has an initially decreasing or/and eventually increasing failure rate function, an upper bound for the optimal burn‐in time is derived for each fixed work size and a uniform (with respect to the burn‐in time) upper bound for the optimal work size is also obtained. Furthermore, it is shown that a non‐trivial lower bound for the optimal burn‐in time can be derived if the underlying lifetime distribution has a large initial failure rate. Copyright © 2005 John Wiley & Sons, Ltd.     

路径对摩擦力做功的影响

本文通过讨论两种临界情况下摩擦力所做的功的变化情况，进一步阐明非保守力做的功与路径有关．     

条件愈苦,意志愈坚 --记王淦昌早年的科研活动

文章介绍了中国物理学家王淦昌早期的科研工作，特别是在抗日战争时期的科研成绩．王淦昌早期的科研贡献并不是在先进的实验仪器上，在条件优裕的实验室内完成的，而是在实验设备缺乏，科学文献不足等极端困难的环境中完成的．从王淦昌身上，可以看到那个时代中国优秀科学家脚踏实地、执志若金的奋斗精神．     

Effect of various adsorbates in dephasing and population decay of the Cu(1 0 0) image potential states

A theoretical study of the electron dynamics in image potential states on Cu(1 0 0) surfaces with different types of adsorbates is presented. Scattering of the image state electron by an adsorbate induces inter-band and intra-band transitions leading respectively to the population decay and to the dephasing of the image state. We compare results obtained with low coverage (typically 1 adsorbate atom per 1000 surface atoms) Cs, Ar, and a model electronegative adsorbates. As follows from our results, Cs adsorbates lead to both appreciable dephasing and decay, while electronegative adsorbates mostly affect the dephasing rate. The effect of low coverage Ar adsorbates is small, consistent with their neutrality.     

光互联网的抗毁性设计研究

由于互联网层叠模型中多层都存在重复的保护与恢复机制，致使互联网的实现极其复杂，造成网络传输效率较低，而且拥塞。随着密集波分复用（DWDM）的广泛使用和网络底层性能的大幅度提高，已经不需要再对网络中多层进行重复保护与恢复。在此基础上，采用了未来光互联网3层 (应用层、IP层和光互联层) 协议模型，并对其中的光互联层的保护进行了深入的研究，提出了部分共享备用路径保护(P-SPP)方法。此模型能充分利用IP层电子的灵活恢复机制与光互联层的快速保护与恢复机制，提高光互联网的传输性能，以适应目前高速发展的互联网对传输带宽的要求。     

Cooperative Strategies for Solving the Bicriteria Sparse Multiple Knapsack Problem

For hard optimization problems, it is difficult to design heuristic algorithms which exhibit uniformly superior performance for all problem instances. As a result it becomes necessary to tailor the algorithms based on the problem instance. In this paper, we introduce the use of a cooperative problem solving team of heuristics that evolves algorithms for a given problem instance. The efficacy of this method is examined by solving six difficult instances of a bicriteria sparse multiple knapsack problem. Results indicate that such tailored algorithms uniformly improve solutions as compared to using predesigned heuristic algorithms.     

Band bending at the Si(1 1 1)–SiO2 interface induced by low-energy ion bombardment

Experiments employing photoreflectance spectroscopy have uncovered band bending due to electrically active defects at the Si(1 1 1)–SiO₂ interface after sub-keV Ar⁺ ion bombardment. The band bending of about 0.5 eV resembles that for Si(1 0 0)–SiO₂, and both interfaces exhibit two kinetic regimes for the evolution of band bending upon annealing due to defects healing. The healing takes place about an order of magnitude more quickly at the (1 1 1) interface, however, probably because of less fully saturated bonding and higher compressive stress.     

显像管调制特性的测量与分析

测试了显象管调制特性曲线，并分析了特性曲线与显像管工作原理．