A dynamical test of phase transition order: New things in old places or old wine in new bottles

We first discuss nonlinear aspects of phase transition theory applied to a particular liquid crystal phase transition. A simple derivation is given to show how two coupled Goldstone modes (one appearing as gauge fluctuations of the ordered phase) can force a phase transition, against all expectations, to take place discontinuously (theory of Halperin, Lubensky, and Ma)-but the discontinuity may be immeasurably small. Then, we describe a new dynamical test of phase transition order, developed by Cladiset al., that turns out to be more sensitive than x-ray diffraction and adiabatic calorimetry. Quantitative data found by this new method are in excellent agreement with the measurements of adiabatic calorimetry and x-ray diffraction as well as expectations implicit in the predictions of HLM.This is the text of an after-banquet talk given at the CNLS Workshop on the Dynamics of Concentrated Systems.     

ω-meson photoproduction on nucleons in the near-threshold region

The European Physical Journal A - The ω-meson photoproduction, γ + p→p + ω, is studied in the framework of a model, containing π-meson exchange in t-channel and...     

Novel pattern formation in the collapse process of floating monolayer at the air-water interface

We have observed a remarkable two-armed spiral in the collapse process of a floating monolayer at the air-water interface by phase contrast microscopy. This demonstrates that the floating monolayer as a form of soft condensed matter reorganizes itself due to a certain kind of macroscopic or collective behavior of molecules as it collapses. This pattern formation is caused by the breakdown of a critical dynamical balance between the deformation of solid domain and the applied surface pressure. The fragility as well as the flexibility of the floating monolayer can be associated with the observed pattern growth. There are also observed interesting, periodically arranged collections of molecules in numerous collapsed regions. Received: 8 July 1997 / Accepted: 4 November 1997     

MO analysis of macroscopic supercurrent flow in MgB 2

We present results from an extended magneto-optical (MO) analysis of two samples cut from high-density pellets of MgB₂. The first sample was studied in order to show that no matter how large the sample is and despite the bulk granularity, the material enters into a critical state in a crystal-like fashion. The second sample was chosen for the quantitative analysis. A numerical approach based on an inverted 2D Biot-Savart model was used to calculate the current paths across the homogeneous polycrystalline bulk, as well as in the vicinity and across some morphological defects. Local current densities in the homogeneous part were estimated as a function of the applied magnetic field at different temperatures, in three regimes: below full penetration, at full penetration and above full penetration, respectively. A hypothesis of interpretation of the apparent absence of magnetic granularity inside the polycrystalline microstructure is presented. It is related to a critical state likely reached by a network of strongly coupled Josephson junctions. Received 31 May 2001 and Received in final form 5 December 2001     

Students’ Reasoning About One-Object Stochastic Phenomena in an ICT-Environment

This paper focuses on the different ways in which students in lower secondary school (14–16 year olds) experience compound random events, presented to them in the form of combined junctions. A carefully designed ICT environment was developed enabling the students to interact with different representations of such structures. Data for the analysis was gathered from two interview sessions. The analysis of the interaction is based on constructivist principles on learning; i.e. we adopted a student-oriented perspective, taking into consideration the different ways students try to make sense of chance encounters. Our results show how some students give priority to geometrical and physical concerns, and we discuss how seeking causal explanations of random phenomena may have encouraged this. With respect to numerically oriented models a division strategy appears to stand out as the preferred one.     

Exciton reflectivity of GaAs/Ga1−x Al x As multiple quantum wells

Summary The normal incidence reflectivity spectrum of excitons in GaAs/Ga_1−x Al _x As multiple quantum wells is calculated within the local response approximation. It is shown that the reflectivity lineshape strongly depends on the sample geometry. Using realistic parameters of a multiple quantum well structure, we obtain an excellent fit of the experimental reflectivity curve, thus giving exciton energies, oscillator strengths and exciton broadening parameters.

---

Riassunto Lo spettro di riflettività ad incidenza normale degli eccitoni nei pozzi quantistici multipli di GaAs/Ga_1−x Al _x As è calcolato nell’ambito dell’approssimazione locale. Si mostra con la forma della linea di riflettività dipende in gran misura dalla forma geometrica del campione. Usando parametri realistici di una struttura a pozzi quantistici multipli, si ottiene un’ottima approssimazione della curva di riflettività sperimentale, che fornisce così energie eccitoniche, forze dell’oscillatore e parameri di ampliamento eccitonico.

---

Резюме В рамках приближения линейного отклика вычисляется спекрт отражательной способности экситонов при нормальном падении для множественных квантовых ям в GaAs/Ga_1−x Al _x As. Показывается, что форма линии отражательной способности сильно зависит от геометрии образца. Используя реалистические параметры структуры множественных квантовых ям, мы получаем хорошее соответствие с экспериментальной кривой для отражательной способности. Получаются энергии экситонов, силы осцилляторов и парам⪟тры экситонного уширения.

     

Band bending at the Si(1 1 1)–SiO2 interface induced by low-energy ion bombardment

Experiments employing photoreflectance spectroscopy have uncovered band bending due to electrically active defects at the Si(1 1 1)–SiO₂ interface after sub-keV Ar⁺ ion bombardment. The band bending of about 0.5 eV resembles that for Si(1 0 0)–SiO₂, and both interfaces exhibit two kinetic regimes for the evolution of band bending upon annealing due to defects healing. The healing takes place about an order of magnitude more quickly at the (1 1 1) interface, however, probably because of less fully saturated bonding and higher compressive stress.     

Crossover Critical Behavior in the Three-Dimensional Ising Model

The character of critical behavior in physical systems depends on the range of interactions. In the limit of infinite range of the interactions, systems will exhibit mean-field critical behavior, i.e., critical behavior not affected by fluctuations of the order parameter. If the interaction range is finite, the critical behavior asymptotically close to the critical point is determined by fluctuations and the actual critical behavior depends on the particular universality class. A variety of systems, including fluids and anisotropic ferromagnets, belongs to the three-dimensional Ising universality class. Recent numerical studies of Ising models with different interaction ranges have revealed a spectacular crossover between the asymptotic fluctuation-induced critical behavior and mean-field-type critical behavior. In this work, we compare these numerical results with a crossover Landau model based on renormalization-group matching. For this purpose we consider an application of the crossover Landau model to the three-dimensional Ising model without fitting to any adjustable parameters. The crossover behavior of the critical susceptibility and of the order parameter is analyzed over a broad range (ten orders) of the scaled distance to the critical temperature. The dependence of the coupling constant on the interaction range, governing the crossover critical behavior, is discussed.     

Sn/Ge(1 1 1) α-phase: characterization of image resonances by specular electron reflection and selective electron scattering

Image potential resonances on the Sn/Ge(1 1 1) α-phase are investigated by two closely related methods: specular electron reflection and so-called selective electron scattering. Electrons from image resonances are detected on this surface at 120 and 300 K, i.e. below and above the phase transition at about 200 K. The dispersion of the image resonances reveals at these two temperatures equivalent effective electron masses, which are characteristic for this type of electronic surface states. The results of the two methods are consistent according to the similarity of the scattering processes. Changes in the loss peak intensity with the annealing temperature are assigned to the surface quality and are reflected by characteristic photoemission intensities.