Luminescence investigations of the GaP-based dilute nitride Ga(NAsP) material system

Multi-quantum well heterostructures (MQWHs) of the novel Ga(NAsP)/GaP material system have been grown, pseudomorphically strained to GaP-substrate. The crystalline perfection is verified by transmission electron microscopy (TEM). For As-concentrations in excess of about 70%, a direct band structure and adequate luminescence efficiency for laser device application is observed. Temperature-dependent photoluminescence (PL) investigations show the influence of carrier localisation and non-radiative recombination processes typical for dilute nitride materials. With rising N content in the active material, the emission wavelength shifts towards longer wavelength, leading to Ga(NAs)/GaP MQW structures with photon energies below the indirect band gap of silicon (Si). At the same time the luminescence intensity drops due to an increase in non-radiative carrier traps and/or structural degradation.     

An Efficient Numerical Model for Planar Spiral Inductor On-Chip

In this paper, a very useful numerical technique has been developed for analyzing the transient characteristics of a planar-spiral inductor on-chip. A locally conformal technique and an alternating-direction implicit scheme are applied to the finite-difference time-domain method. A formulation for solving three dimensional Maxwell’s equations is proposed. Using the proposed method, various parameters of the planar-spiral inductors have been analyzed and an equivalent circuit, which includes frequency-independent circuit elements, has been introduced. Highly computational efficiency is implemented. Numerical results show excellent agreement with the measured data over a wide frequency range.     

介孔网络电路

用二次阳极氧化法制备纳米多孔氧化铝板,然后用磁控溅射方式在纳米多孔氧化铝板表面镀金得到介孔网络电路,对该介孔网络电路进行输运测量,发现其具有非线性电阻.     

乌桕类可可脂结晶过程中表现体积变化

为了解乌桕类可可脂(CTCBE)缓冷结晶横向胀罐爆裂原因，研究CTCBE结晶过程中的膨胀特性，采用流体静力法测试了不同等温结晶条件下CTCBE结晶形成的表观密度和表观体积及其横纵向膨胀状况。结果表明，CTCBE缓冷结晶后形成外部和中部两个晶区。在5-25℃的各等温结晶范围内，当结晶温度增加时，外部结晶区域减小、表观密度变化不大；中部结晶区域增大、表观密度明显减小，CTCBE的表观体积、横向、纵向膨胀率均增大，膨胀横向大于纵向。进一步表明CTCBE在自然缓冷固化的表观体积根本上由其结晶温度决定。为有效防止横向胀罐，自然缓冷固化温度应低于10℃。     

On removable even circuits in graphs

Let G be a connected graph with minimum degree at least 3. We prove that there exists an even circuit C in G such that G−E(C) is either connected or contains precisely two components one of which is isomorphic to a 1-bond. We further prove sufficient conditions for there to exist an even circuit C in a 2-connected simple graph G such that G−E(C) is 2-connected. As a consequence of this, we obtain sufficient conditions for there to exist an even circuit C in a 2-connected graph G for which G−E(C) is 2-connected.     

Upon the removal of the edges of a 1-factor from an even circuit in a 2-connected graph

Let G be a 2-connected graph with minimum degree at least 3. We prove that there exists an even circuit C in G with factorization F={F₁,F₂} such that G−E(F₁) is 2-connected.     

基于改进遗传算法的布局优化子问题

本针对子问题，构造了布局子问题(关于同构布局等价类)的改进遗传算法。将该算法应用于二维布局优化子问题，数值实验表明该算法能够在很好地保持图元的邻接关系的前提下找到子问题的最优解。由于布局优化问题可分解为有限个子问题，所以利用该算法可以找到整个布局优化问题的全局最优解。     

Loss in a rectangular optical waveguide induced by the crossover of a second waveguide

We calculate the loss induced in a single-mode rectangular optical waveguide by the presence of a second waveguide, perpendicular to the first, which crosses over the first waveguide at a variable distance d. Our calculation is applied to the analysis of several doped silica waveguides of practical importance for optical circuit design.     

开关布局中本质不同的开关线路计算

通过对开关布局问题的研究，来解决一类象开关线路一样比较特殊，比较复杂的布局优化问题。从而寻找出这类问题的全局优化算法。本应用对称群对集合的作用，轨道，不动点等讨论了开关布局问题，给出了本质不同的开关线路个数的计算公式。     

Laser nanosources based on planar photonic crystals as new platforms for nanophotonic devices

Two-dimensional photonic crystal lasers have been fabricated on III–V semiconductor slabs. Tuning of the spontaneous emission in micro and nanocavities has been achieved by accurate control of the slab thickness. Different structures, some of them of new application to photonic crystal lasers, have been fabricated like the Suzuki-phase or the coupled-cavity ring-like resonators. Laser emission has been obtained by pulsed optical pumping. Optical characterization of the lasing modes have been performed showing one or more laser peaks centred around 1.55 μm. Far field characterization of the emission pattern has been realized showing different patterns depending on the geometrical shape of the structures. These kinds of devices may be used as efficient nanolaser sources for optical communications or optical sensors.