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排序方式: 共有1323条查询结果,搜索用时 15 毫秒
1.
应用不可约张量理论构造了三角对称晶场中3d2/3d8态离子的45阶可完全对角化的微扰哈密顿矩阵,研究了CsNiCl3晶体的光谱精细结构、晶体结构、零场分裂参量、Jahn-Telller效应以及自旋单重态对Ni2+离子基态能级的影响,理论与实验相符合.在此基础上,进一步研究了以前工作中被忽略的自旋-自旋耦合作用和Trees修正对CsNiCl3晶体的光谱精细结构和零场分裂参量的影响,发现有四种机理会影响零场分裂参量:1)自旋-轨道耦合机理,2)自旋-自旋耦合机理;3)自旋-轨道与自旋-自旋联合耦合机理;4)自旋-轨道与Trees修正联合耦合机理,其中自旋-轨道耦合机理是最主要的,其他三种机理也是不可忽略的.
关键词:
基态能级
精细结构
零场分裂
自旋-自旋耦合 相似文献
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This paper presents an analysis of a portfolio model which can be used to assist a property-liability insurance company in determining the optimal composition of the insurance and investment portfolios. By introducing insurer's threshold risk and relaxing some non-realistic assumptions made in traditional chance constraint insurance and investment portfolio models, we propose a method for an insurer to maximize his return threshold for a given threshold risk level. This proposed model can be used to optimize the composition of underwriting and investment portfolios regarding the insurer's threshold risk level, as well as to generate the efficient frontier by adjusting insurer's threshold risk levels. A numerical example is given based on the industry's aggregated data for a sixteen year period. 相似文献
6.
In this paper we consider the (t, n)-threshold visual secret sharing scheme (VSSS) in which black pixels in a secret black-white images is reproduced perfectly
as black pixels when we stack arbitrary t shares. This paper provides a new characterization of the (t, n)-threshold visual secret sharing scheme with such a property (hereafter, we call such a VSSS the (t, n)-PBVSSS for short). We use an algebraic method to characterize basis matrices of the (t, n)-PBVSSS in a certain class of matrices. We show that the set of all homogeneous polynomials each element of which yields
basis matrices of the (t, n)-PBVSSS becomes a set of lattice points in an (n−t+1)-dimensional linear space. In addition, we prove that the optimal basis matrices in the sense of maximizing the relative
difference among all the basis matrices in the class coincides with the basis matrices given by Blundo, Bonis and De Santis
[3] for all n≥ t ≥ 2. 相似文献
7.
Alexandru V. Asimit 《Insurance: Mathematics and Economics》2007,41(1):53-61
This paper exploits a stochastic representation of bivariate elliptical distributions in order to obtain asymptotic results which are determined by the tail behavior of the generator. Under certain specified assumptions, we present the limiting distribution of componentwise maxima, the limiting upper copula, and a bivariate version of the classical peaks over threshold result. 相似文献
8.
T. Nakamura 《The European Physical Journal A - Hadrons and Nuclei》2002,13(1-2):33-37
We present the recent experimental results on the 6He structure studied by the 6Li(t, 3He)6He reaction at 336 MeV. Above the conspicuous peaks for ground and first excited states for 6He, we have observed a broad structures at E
x∼ 5 MeV, and E
x∼ 15 MeV. The angular distribution of this structure exhibits the dominance of a ΔL = 1 transition, indicating the existence of intruder dipole states at low excitation energies in 6He. A slight admixture of positive-parity states in this structure has been indicated as well.
Received: 1 May 2001 / Accepted: 4 December 2001 相似文献
9.
Arthur G. Maki John C. Grecu Brenda Winnewisser Manfred Winnewisser 《Journal of Molecular Spectroscopy》2003,222(2):198-212
High-resolution spectra of 15N12C12C15N and 14N13C13C14N have been measured and analyzed from 200 to 3600 cm−1. All the vibrational levels below 900 cm−1 have been observed and characterized. The Fermi resonance between ν2 and 2ν4 has been studied and the resonance constant has been determined for several cases. Several Σ− states have been directly observed for the first time for each isotopomer, the (0001111)0f, (0011111)0f, and (0002222)0f states. The pattern of the energy levels for clusters of l-type resonance coupled levels, such as 0001131,3, has been determined for cyanogen for the first time. Among other things this involved the determination of the vibrational l-type resonance constant, r45. Many of the power series constants, αi and xij, and higher order constants have been determined. 相似文献
10.
V. F. Radantsev V. V. Kruzhaev G. I. Kulaev 《Physica E: Low-dimensional Systems and Nanostructures》2004,20(3-4):396
The Rashba effect in metal–insulator–semiconductor (MIS) structures based on zero-gap HgCdTe is investigated experimentally and theoretically over a wide doping range NA–ND=3×1015–3×1018 cm−3. Increase of doping enlarges the magnitude of the effect at the same 2D concentration and strengthens a gate-voltage dependence of the Rashba splitting. The results demonstrate values of Rashba polarization as high as PR0.5 and a capability to control the Rashba effect strength at constant electron concentration. 相似文献