铁分子Fe2的自旋极化效应

采用密度泛函方法(B3P86)对 Fe_2分子结构进行了优化.计算结果中未观察到自旋污染,基态波函数与高态波函数并未混杂,结果表明,Fe_2中有8个未配对电子,这些电子空间分布不同和自旋平行产生的自旋极化效应,使 Fe_2能量最低.计算结果表明,Fe_2分子的基态是~9∑_g~ ,并非~7Δ_u,进而表明 Fe_2的自旋平行效应比电子自旋配对效应要强.计算得到该分子基态的二阶、三阶和四阶力常数分别为1.4115×10~(-2)aJ/nm~2、-37.1751×10~3aJ/nm~3和 98.7596×10~4aJ/nm~4；光谱数据ω_eχ_e、B_e、α_e分别为0.3522、0.0345、 0.4963×10~(-4)cm~(-1)；离解能为3.5522eV,平衡键长为0.2137nm,振动频率为292.914cm~(-1)；并得到了 Murrel-Sorbie 函数.     

Mean Field Behaviour of Spin Systems with Orthogonal Interaction Matrix

For the long-range deterministic spin models with glassy behaviour of Marinari, Parisi and Ritort we prove weighted factorization properties of the correlation functions which represent the natural generalization of the factorization rules valid for the Curie–Weiss case.     

Ground-state properties of LiV2O4 and Li1-xZnx(V1-yTiy)2O4

We present susceptibility, microwave resistivity, NMR and heat-capacity results for Li_1-xZn_x(V_1-yTi_y)₂O₄ with 0 ? x ? 0.3 and 0 ? y ? 0.3. For all doping levels the susceptibility curves can be fitted with a Curie-Weiss law. The paramagnetic Curie-Weiss temperatures remain negative with an average value close to that of the pure compound Θ≈ - 36 K. Spin-glass anomalies are observed in the susceptibility, heat-capacity and NMR measurements for both type of dopants. From the temperature dependence of the spin-lattice relaxation rate we found critical-dynamic behavior in the Zn doped compounds at the freezing temperatures. For the Ti-doped samples two successive freezing transitions into disordered low-temperature states can be detected. The temperature dependence of the heat capacity for Zn-doped compounds does not resemble that of canonical spin glasses and only a small fraction of the total vanadium entropy is frozen at the spin-glass transitions. For pure LiV₂O₄ the spin-glass transition is completely suppressed. The temperature dependence of the heat capacity for LiV₂O₄ can be described using a nuclear Schottky contribution and the non-Fermi liquid model, appropriate for a system close to a spin-glass quantum critical point. Finally an ( x / y , T )-phase diagram for the low-doping regime is presented. Received 16 March 2001 and Received in final form 30 October 2001     

Thermal analysis of glasses for proecological applications

Thermal behaviour and biochemical activity of potassium-silicate-phosphate glasses modified by addition of Ca, Mg, acting as ecological fertilisers of controlled release rate of the nutrients for plants were studied. It has been found that the biochemical activity of silicate-phosphate glasses depends on the nature and the number of components forming the glassy framework and is related to the thermal stability of glass demonstrated by the formation of new compounds during the process of crystallisation. It is proved that these seemingly different properties are determined by the same parameters which are the strengths bonds of glass network-formers and modifiers as well as their chemical affinity. This revised version was published online in July 2006 with corrections to the Cover Date.     

Some applications of polarized inelastic neutron scattering in magnetism

A brief account of applications of polarized inelastic neutron scattering in condensed matter research is given. We show that full polarization analysis is the only tool allowing to discriminate unambiguously between different magnetic modes in various magnetic materials. We show by means of recent results in the Heisenberg ferromagnet EuS that the effects of dipolar interactions can be studied on a microscopic scale. Moreover, we have found for the first time indications for the divergence of the longitudinal fluctuations belowT _c. In the itinerant antiferromagnet chromium we demonstrate that the dynamics of the longitudinal and transverse excitations are very different, resolving a long standing puzzle concerning the slope of their dispersion. Finally, we show that a measurement of the polarization-dependent part of the cross section of non-centrosymmetric MnSi proves directly that the chirality of the magnetic fluctuations is left-handed.     

Electron spin lifetimes in Hg0.78Cd0.22 Te and InSb

We have made direct pump–probe measurements of spin lifetimes in long wavelength narrow-gap semiconductors at wavelengths between 4 and 10 μm and from 4 to 300 K. In particular, we measure remarkably long spin lifetimes, τ_s300 ps, even at 300 K for epilayers of degenerate n-type InSb. In this material the mobility is approximately constant between 77 and 300 K, and we find that τ_s is approximately constant in this temperature range. In order to determine the dominant spin relaxation mechanism we have investigated the temperature dependence of τ_s in non-degenerate lightly n-type Hg_0.78Cd_0.22Te of approximately the same band gap as InSb, and find that τ_s varies from 356 ps at 150 K to 24 ps at 300 K. Our results, both in magnitude and temperature dependence of τ_s, imply that the Elliott–Yafet model dominates in these materials.     

Strain hardening of polycarbonate in the glassy state: Influence of temperature and molecular weight

This study is concerned with the temperature and molecular weight dependence of the strain-hardening behavior of polycarbonate. It is shown that the strain-hardening modulus reduces with increasing temperature and decreasing molecular weight. This result is interpreted in terms of temperature accelerated relaxation of the entanglement network. Moreover, it is shown that frozen-in orientations, induced by homogeneous deformations above the glass transition temperature, lead to anisotropic yield behavior that can be fully rationalized (and modelled) in terms of a superimposed stress contribution of the prestrained network. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 2041–2049, 2004     

Crystal structure and magnetic ordering of RNi Si compounds

The element distributions and the magnetic ordering behaviour of compounds RNi₁₀Si₂ (R = Tb, Dy, Ho, Er, Tm) have been studied by neutron powder diffraction down to temperatures of 1.6 K. The compounds crystallize in an ordered variant of the ThMn₁₂ structure type in the tetragonal space group P4/nmm. An ordered 1:1 distribution of Ni and Si on sites 4d and 4e, respectively, corresponds to a modulation vector [0, 0, 1] with respect to the space group I4/mmm of the ThMn₁₂ structure. TbNi₁₀Si₂ orders antiferromagnetically below T _N = 4.5 K with a magnetic propagation vector of [0, 0, 1/2]. The magnetic Tb moments, 8.97(2) /Tb atom at 1.6 K, are aligned along the c-axis. The Ni sites in TbNi₁₀Si₂ do not carry any ordered magnetic moments. The compounds with R = Dy, Ho, Er, and Tm are paramagnetic down to 1.6 K and 3.0 K, respectively. Received 10 July 2002 / Received in final form 12 September 2002 Published online 29 October 2002     

Thermomagnetic hysteresis and electrical transport in amorphous films

We report resistivity and magnetization measurements on an amorphous Ni₇₄Mn₂₄Pt₂ thin film in the temperature range of 3–300 K. Two significant features are apparent in both the magnetic susceptibility and electrical resistivity. A low-temperature (low-T) anomaly is observed at about 40 K, where a cusp appears in the resistivity, while a concomitant step-like increase in zero-field-cooled (ZFC) magnetization (M) appears with increasing temperature. The low-T anomaly is attributed to a crossover from a pure re-entrant spin-glass within individual domains to a mixed ferro-spin-glass regime at lower temperatures. By contrast, the high-temperature (high-T) anomaly, signaled by the appearance of hysteresis below 250 K, corresponds to the freezing of transverse spins in individual domains acting independently. Between the low-T and high-T anomalies a small but discernable magnetic hysteresis is observed for warming vs. cooling in the field-cooled (FC) case. This behavior clearly indicates the presence of domain structure in the sample, while the disappearance of this hysteresis at lower temperatures indicates the complete freezing of the spin orientation of these domains. According to these results, we have divided the magnetic state of this sample into three regions: at temperatures above 250 K, the sample behaves like a soft ferromagnet, exhibiting M vs. H loops with very small hysteresis (less than 5 Oe). As the temperature is lowered into the intermediate region (the range 40–250 K), spins become frozen randomly and progressively within the individual domains. These domains behave independently, rather than as a cooperative behavior of the sample. Weak irreversibility sets in, indicating the onset of transverse spin freezing within the domains. At temperatures below 40 K, the M vs. H loops exhibit larger hysteresis, for both the ZFC and FC cases, as in a pure spin-glass. We have also demonstrated giant noise in the resistivity at temperatures just below 250 K. Such noise can originate from fluctuations of the domains near the film surface because of competing effective bulk and surface anisotropy fields. The large observed amplitude may be explained by means of a large ferromagnetic anisotropy in the resistivity due to the large spin–orbit effect seen in NiMn systems. Finally, the low-T peak in the resistivity has been analyzed using Fisher and Langer's expression based on the Friedel Model proposed for critical transitions in transition metals (s–d systems). The fitted results are in satisfactory agreement with the predictions of this model.     

Fabrication of patterned gold electrodes with spin-coated-and-fired Au(1 1 1) film by the soft lithography

We prepared high quality Au(1 1 1) film on Si wafer through the spin coating and thermal decomposition of a gold ink, spin-coated-and-fired (SCAF) Au film. The X-ray measurements, XRD and pole-figure analysis, showed that the SCAF Au film has a (1 1 1) out-of-plane orientation with a random in-plane orientation. In order to confirm the chemical activity of the SCAF Au film, we demonstrate the formation of patterned structures with the film by using soft lithography technique. The chemical activities of this physically stable SCAF Au film to the alkanethiols were at least equivalent those of physically deposited the Au films. The possibility of the mass production of micro patterned structure with the SCAF Au film was also demonstrated over the wide region on Si wafer by the microcontact lithography. These suggest that the Au film will help the easy fabrication of various nanosized devices on Si wafer and other substrates.