Co-doped In2O3 thin films: Room temperature ferromagnets

Laser-ablated Co-doped In₂O₃ thin films were fabricated under various growth conditions on R-cut Al₂O₃ and MgO substrates. All Co:In₂O₃ films are well-crystallized, single phase, and room temperature ferromagnetic. Co atoms were well substituted for In atoms, and their distribution is greatly uniform over the whole thickness of the films. Films grown at 550 °C showed the largest magnetic moment of about 0.5 μ_B/Co, while films grown at higher temperatures have magnetic moments of one order smaller. The observed ferromagnetism above room temperature in Co:In₂O₃ thin films has confirmed that doping few percent of magnetic elements such as Co into In₂O₃ could result in a promising magnetic material.     

Atomic scale properties of interior interfaces of semiconductor heterostructures as determined by quasi-digital highly selective etching and atomic force microscopy

We report on first experiments combining quasi-digital highly selective etching and atomic force microscopy (AFM) to examine the interior interfaces of semiconductor heterostructures. Lattice matched (GaIn)As/InP heterostructures grown by metalorganic vapour-phase epitaxy (MOVPE) are taken as a model system to check the capabilities of this new method. Standard selective etchants for different material systems have been optimized in selectivity and etch rate to achieve a quasi-digital etching behaviour. In this way, the real structure of interior interfaces can be determined by AFM. We find a significant difference between the surface of the heterostructure and the interior interfaces.     

Structural and electrical characterization of SxSe100−x thin films

Thin films of samples of the glassy S_xSe_100−x system with 0 ≤ x ≤ 7.28 have been prepared by thermal evaporation technique at room temperature (300 K). X-ray investigations show that the structure of pure selenium (Se) does change seriously by the addition of small amount of sulphur S ≤7.28%. The lattice parameters were determined as a function of sulphur content. Results of differential thermal analysis (DTA) of the glassy compositions of the system S_xSe_100−x were discussed. The characteristic temperatures (T_g, T_c and T_m) were evaluated. Dark electrical resistivities, ρ, of S_xSe_100−x thin films with different thicknesses from 100 to 500 nm, were measured in the temperature range from 300 to 423 K. Two distinct linear parts with different activation energies were observed. The variation of electrical resistivity of examined compositions has been discussed as a function of the film thickness, temperature and the sulphur content. The application of Mott model for the phonon assisted hopping of small polarons gave the same two activation energies obtained from the resistivity temperature calculations.     

Tantalum Clusters in Oxidic Matrices — Synthesis,Crystal Structure and Magnetic Properties of Eu1.83Ta15O32

The mixed‐valent oxotantalate Eu_1.83Ta₁₅O₃₂ was prepared from a compressed mixture of Ta₂O₅ and the metals in a sealed Ta ampoule at 1400 °C. The crystal structure was determined by means of single crystal X‐ray diffraction: space group R3¯, a = 777.2(6) pm and c = 3523.5(3) pm, Z = 3, 984 symmetrically independent reflections, 83 variables, R_F = 0.027 for I > 2σ (I). The structure is isotypic to Ba₂Nb₁₅O₃₂. The salient feature is a [Ta(+8/3)₆O₁₂ⁱO₆^a] cluster consisting of an octahedral Ta₆ core bonded to 12 edge‐bridging inner and six outer oxygen atoms. The clusters are arranged to slabs which are sandwiched by layers of [Ta(+5)₃O₁₃] triple octahedra. Additional Ta(+5) and Eu(+2) atoms provide the cohesion of these structural units. Twelve‐fold coordinated Eu(+2) atoms are situated on a triply degenerate position 33 pm displaced from the threefold axis of symmetry. A depletion of the Eu(+2) site from 6 to 5.5 atoms per unit cell reduces the number of electrons available for Ta‐Ta bonding from 15 to 14.67 electrons per cluster. Between 125 and 320 K Eu_1.83Ta₁₅O₃₂ is semi‐conducting with a band gap of 0.23 eV. The course of the magnetization is consistently described with the Brillouin function in terms of a M_mol/(N_Aμ_B) versus B/T plot in the temperature range 5 K — 320 K and at magnetic flux densities 0.1 T — 5 T. At moderate flux densities (< 1 T) the magnetic moment agrees fairly well with the expected value of 7.94 μ_B for free Eu (2+) ions with 4f⁷ configuration in ⁸S_7/2 ground state. Below 5 K, anisotropic magnetization measurements at flux densities B < 1 T point to an onset of an antiferromagnetic ordering of Eu spins within the layers and an incipient ferromagnetic ordering perpendicular to the layers.     

Methods and Results of Optical Investigations on Semiconductor Interfaces

Measurement of the state of polarization of reflected light (ellipsometry) permits the determination of the thickness and refractive index of thin layers formed on a surface. The IR absorption spectra of such thin layers, which can be measured by means of internal reflection spectroscopy (IRS), provide information about their chemical composition. These methods have been used to study adsorption processes and the formation of reaction layers at semiconductor interfaces, and may also be used for measurements of free charge carriers in the space-charge region and in surface states. Results of such investigations are given in this article.     

The reciprocal CuInS2+2CdSe⇔CuInSe2+2CdS system. Part I. The quasi-binary CuInSe2-CdSe system: Phase diagram and crystal structure of solid solutions

The type of interaction in quasi-binary system CuInSe₂ (CIS)-CdSe was investigated using differential thermal and X-ray phase analysis methods. The limits of existence of solid solutions based on low-temperature (α) and high-temperature (γ) CIS modifications and CdSe (β) with chalcopyrite, sphalerite and wurtzite structures, respectively, were established in sub-solidus region at 620 K and 870 K. For certain compositions of solid solutions, the structure was refined using powder X-ray diffraction. A phase diagram of the CIS-CdSe system was constructed. A peritectic process L+β⇔γ takes place in the system at 1260 K.     

An energy-transport model for semiconductors derived from the Boltzmann equation

An energy-transport model is rigorously derived from the Boltzmann transport equation of semiconductors under the hypothesis that the energy gain or loss of the electrons by the phonon collisions is weak. Retaining at leading order electron-electron collisions and elastic collisions (i.e., impurity scattering and the elastic part of phonon collisions), a rigorous diffusion limit of the Boltzmann equation can be carried over, which leads to a set of diffusion equations for the electron density and temperature. The derivation is given in both the degenerate and nondegenerate cases.     

Structural characterization and physical properties of the system La1.33LixCrxTi2−xO6

New phases which arise from partial substitution of Ti⁴⁺ by Cr³⁺ and Li⁺ of the compound La_2/3TiO₃ have been obtained, giving rise to the series La_1.33Li_xCr_xTi_2−xO₆ (x=0.66, 0.55 and 0.44). These phases adopt a perovskite-type structure as deduced from their structural characterization. Rietveld's analyses of neutron diffraction data show that it is orthorhombic (S.G. Pbnm) with ordered domains. Conductivity has been examined by complex impedance spectroscopy and it increases with increasing lithium and chromium content. These materials behave as mixed conductors with low activation energies. Magnetic susceptibility variation with temperature shows antiferromagnetic interactions at the lowest temperatures.     

First-principles study of new half Heusler for optoelectronic applications

We report investigations of the structural, electronic and optical properties of 36 half-Heusler compounds in comparison with II–VI semiconductors using the first-principles calculations based on the density functional theory. In this work, we demonstrate the similarity in the electronic structure of these materials with that of II–VI semiconductors through the analysis of lattice parameters, band gaps and static dielectric constants at ambient pressure. The evolution of these properties under pressure is also necessary to predict new candidates for the optoelectronic devices.     

Structural and optical characterization of CdS nanoparticles prepared by chemical precipitation method

In the present study we have synthesized CdS semiconducting quantum dots by the chemical precipitation method using Thioglycerol as the capping agent. X-ray powder diffraction (XRD) and transmission electron microscopy (TEM) are employed to characterize the size, morphology and crystalline structure of the as-prepared material. The synthesized QPs have a mixture of cubical and hexagonal crystal symmetry with 12 nm average diameter. Ultraviolet-visible (UV-vis) absorption spectroscopy is used to calculate the band gap of the material and blue shift in absorption edge. Confinement of the optical phonon modes in the QPs is studied by Raman spectroscopy, while FTIR for identification of chemical bonds in the nanomaterial. Multiple cadmium and sulphur defects were observed by employing the photoluminescence (PL) method.