非傍轴平顶高斯光束M2因子两种定义的比较研究

基于功率密度的二阶矩方法,推导出了非傍轴平顶高斯(FG)光束束宽和远场发散角的解析表达式·研究表明,当w0/λ→0时,远场发散角趋于渐近值θmax=63.435°,与阶数无关·使用非傍轴高斯光束代替傍轴高斯光束作为理想光束,研究了非傍轴FG光束的M2因子,并与传统定义的M2因子作了比较·在非傍轴范畴,非傍轴FG光束的M2因子不仅与阶数N有关,而且与w0/λ有关·按照定义,当w0/λ→0时,非傍轴FG光束的M2因子不等于0,对阶数N=1,2,3时,M2因子分别趋于0.913,0.882和0.886·当N→∞时,M2因子取最小值M2min=0.816·     

加权二次有理Bézier插值曲线

在本文中,给定一组有序空间数据点列及每个数据点的切矢向量,利用加权二次有理Bézier曲线对数据点作插值曲线,使该曲线具有C1连续性,并且权因子只是对相应顶点曲线附近产生影响,同调整两个相邻的权因子可以调整这两个相邻顶点之间的曲线和它的控制多边形.     

辐射传递蒙特卡洛法精度分析及数值试验

本文建立了蒙特卡洛法模拟散射参与性介质内辐射传递计算模型。对蒙特卡洛法的计算精度及运行时间进行了较为详细的分析,提出了几种判断计算精度的方法。同时,借助蒙特卡洛法模拟辐射传递过程,进行数值“辐射实验”。利用该“实验结果”进行了物性反问题研究。在已知光学厚度的前提下,得到散射反照率与后半球辐射热流之间的单值函数关系。     

负动量压缩因子的环形对撞机磁聚焦结构的研究

探讨了设计负动量压缩因子(α_p<0)的正负电子对撞机储存环磁聚焦结构的可行性及方法.作为应用实例,说明了设计α_p<0的τ–粲工厂磁聚焦结构的可能性.     

中学生男性性别角色期望的因子模型与应用

运用中学生男性性别角色期望调查表和因子分析方法对贵阳市中学生进行男性性别角色期望调查和定性与定量分析,为中学生树立适宜的性别角色观,促进其心理健康发展提供量化依据.分析显示:传统的男性角色并不被现代中学生完全接受,无论是男中学生还是女中学生都在力图探求一种新的男性性别角色模式,且两性中学生对这一新的男性性别角色模式的期望和把握是有一定差异的.     

A Characterization of Graphs without Even Factors

In this paper, we first reduce the problem of finding a minimum parity (g,f)-factor of a graph G into the problem of finding a minimum perfect matching in a weighted simple graph G*. Using the structure of G*, a necessary and sufficient condition for the existence of an even factor is derived. This paper was accomplished while the second author was visiting the Center for Combinatorics, Nankai University. The research is supported by NSFC     

Does the beam width affect the generalized M factor of hard-edged diffracted beams?

A detailed study of the generalized M² factor of hard-edged diffracted beams based on the truncated second-order moments method, asymptotic analysis and self-convergent beam width approach is performed. The dependence of the generalized M² factor on the parameters characterizing the spatial profile, and beam truncation, etc. is analyzed.     

On the role of the interface charge in non-ideal metal–semiconductor contacts

The bias dependent interface charge is considered as the origin of the observed non-ideality in current–voltage and capacitance–voltage characteristics. Using the simplified model for the interface electronic structure based on defects interacting with the continuum of interface states, the microscopic origin of empirical parameters describing the bias dependent interface charge function is investigated. The results show that in non-ideal metal–semiconductor contacts the interface charge function depends on the interface disorder parameter, density of defects, barrier pinning parameter and the effective gap center. The theoretical predictions are tested against several sets of published experimental data on bias dependent ideality factor and excess capacitance in various metal–semicoductor systems.