Anderson transition in dilute systems with pure exponential interactions

Summary Assuming a completely disordered lattice it is shown that all the states are localized when the disorder parameterx=a ₀/0 reachesthe value 0.31, wherea is the mean atomic separation anda ₀ is the Bohr radius.     

Statistics of transfer matrices for disordered quantum thin metallic slabs

In the quantum transport problem of a tight-binding Anderson model, the statistics of eigenvalues for the transfer matrices of thin disordered slabs is studied. Numerical simulations indicate that the probability distribution of nearest neighbor eigenvalue spacing and the ₃ statistics have already become close to that of the Gaussian orthogonal ensemble for sample lengths of the order of the mean free path, provided that transverse localization effects are not important. An intuitive argument is given why this should occur independently of the size of the matrix. Therefore, good mixing of the channels is not essential for obtaining Gaussian orthogonal ensemble type statistics and universal conductance fluctuations.     

Electron-pairing analysis from localization and delocalization indices in the framework of the atoms-in-molecules theory

This article presents an overview of recent advances in the study of electron pairing through the use of localization and delocalization indices obtained from double integration over atomic basins of the exchange–correlation density in the framework of the atoms-in-molecules theory. These localization and delocalization indices describe the intra- and interatomic distribution of the electron pairs in a molecule. The main results of the application of these second-order indices to the analysis of molecular structure and chemical reactivity are briefly reviewed. It is shown that localization and delocalization indices represent a powerful tool to describe the electron-pair structure of molecules, which, in turn, provides deeper insight into relevant chemical phenomena such as electron correlation effects and the formation of localized α, β electron pairs. Received: 8 April 2002 / Accepted: 26 June 2002 / Published online: 6 September 2002 Acknowledgements. Financial help was furnished by the Spanish DGES projects no. PB98-0457-C02-01 and BQU2002-04112-C02-02. J.P. thanks the Departament d'Universitats, Recerca i Societat de la Informació de la Generalitat de Catalunya for benefiting from a doctoral fellowship, no. 2000FI-00582. M.S. is indebted to the Departament d'Universitats, Recerca i Societat de la Informació of the Generalitat de Catalunya for financial support through the Distinguished University Research Promotion, 2001. We also thank the Centre de Supercomputació de Catalunya for providing us with computing facilities. Correspondence to: M. Solà e-mail: miquel.sola@udg.es     

On obtaining localized bonding schemes from delocalized molecular-orbital wave functions

A straightforward procedure is proposed for expanding a molecular orbital determinantal wave function into a set of determinantal wave functions composed of atomic orbitals localized at the atoms of a molecule. By employing this method, atomic orbital determinants and their weights can be derived for a molecule from the computed molecular-orbital wave function. The procedure permits the interpretation of a molecular orbital determinantal wave function in terms of bonding schemes related to the classic resonance structures used by organic chemists. By using the unrestricted molecular orbital determinant, bonding schemes and their weights are obtained for butadiene, the butadiene radical cation and the acrylonitrile radical anion. Their dominant bonding schemes are in accord with the relevant resonance structures for these molecules. For the butadiene radical cation and the acrylonitrile anion they are shown to be compatible with the accepted mechanisms of the electrochemical coupling reactions of butadiene and acrylonitrile. Received: 7 August 1996 / Accepted: 18 March 1997     

BiGaIn2S6 – Synthese,Struktur und Eigenschaften

BiGaIn₂S₆ – Synthesis, Structure, and Properties The novel compound BiGaIn₂S₆ was obtained in the quaternary system Bi–Ga–In–S. BiGaIn₂S₆ forms red transparent platelets and exhibits a range of homogeneity between BiGa₁In₂S₆ and BiGa_0.8In_2.2S₆. The compound is a semiconductor with E_g(opt.) = 1.9 eV. – BiGaIn₂S₆ crystallizes monoclinically forming a new structure type (a = 1112.0 pm, b = 380.6 pm, c = 1228.0 pm, β = 116.30°, Z = 2, space group P2₁/m, no. 11). The S atoms form strongly corrugated 2 D fragments of the (hc)₂ sphere packing type. The In atoms occupy octahedral holes (d(In–S) = 262 pm) and the Ga atoms tetrahedral holes (d(Ga–S) = 234 pm) inside the 2 D-layers. The Bi atoms on the top of trigonal BiS₃ pyramids (d(Bi–S) = 265 pm) are at the periphery of the layers and have four additional S ligands from the neigbouring layer at much larger distances (d(Bi–S) = 319 pm). – The bonding of a Bi^III sulfide is analyzed for the first time by the Electron Localization Function (ELF).     

Dynamic stability of externally pressurized elastic rings subjected to high rates of loading

Of interest here is the influence of loading rate on the stability of structures where inertia is taken into account, with particular attention to the comparison between static and dynamic buckling. This work shows the importance of studying stability via perturbations of the initial conditions, since a finite velocity governs the propagation of disturbances. The method of modal analysis that determines the fastest growing wavelength, currently used in the literature to analyze dynamic stability problems, is meaningful only for cases where the velocity of the perfect structure is significantly lower than the associated wave propagation speeds.     

Localization or tunneling in asymmetric double-well potentials

An asymmetric double-well potential is considered, assuming that the wells are parabolic around the minima. The WKB wave function of a given energy is constructed inside the barrier between the wells. By matching the WKB function to the exact wave functions of the parabolic wells on both sides of the barrier, for two almost degenerate states, we find a quantization condition for the energy levels which reproduces the known energy splitting formula between the two states. For the other low-lying non-degenerate states, we show that the eigenfunction should be primarily localized in one of the wells with negligible magnitude in the other. Using Dekker’s method (Dekker, 1987), the present analysis generalizes earlier results for weakly biased double-well potentials to systems with arbitrary asymmetry.     

Phase Stability and Elastic Properties of Chromium Borides with Various Stoichiometries

Phase stability is important to the application of materials. By first‐principles calculations, we establish the phase stability of chromium borides with various stoichiometries. Moreover, the phases of CrB₃ and CrB₄ have been predicted by using a newly developed particle swarm optimization (PSO) algorithm. Formation enthalpy–pressure diagrams reveal that the MoB‐type structure is more energetically favorable than the TiI‐type structure for CrB. For CrB₂, the WB₂‐type structure is preferred at zero pressure. The predicted new phase of CrB₃ belongs to the hexagonal P‐6m2 space group and it transforms into an orthorhombic phase as the pressure exceeds 93 GPa. The predicted CrB₄ (space group: Pnnm) phase is more energetically favorable than the previously proposed Immm structure. The mechanical and thermodynamic stabilities of predicted CrB₃ and CrB₄ are verified by the calculated elastic constants and formation enthalpies. The full phonon dispersion calculations confirm the dynamic stability of WB₂‐type CrB₂ and predicted CrB₃. The large shear moduli, large Young’s moduli, low Poisson ratios, and low bulk and shear modulus ratios of CrB₄? PS_C and CrB₄? PS_D indicate that they are potential hard materials. Analyses of Debye temperature, electronic localization function, and electronic structure provide further understanding of the chemical and physical properties of these borides.     

Localization microscopy (SPDM) facilitates high precision control of lithographically produced nanostructures

Nanoscale resolution in material sciences is usually restricted to scanning electron beam microscopes. Here we present a procedure that allows single molecule resolution of the sample surface with visible light. Highlighting the performance we used electron beam lithography to generate highly regular nanostructures consisting of interconnected cubes. The samples were labeled with Alexa 647 dyes. The spatial organization of the dyes on nanostructured surfaces was localized with single molecule resolution using localization microscopy. This succeeded also in an absolute spatial calibration of the localization method applied (spectral precision distance microscopy/SPDM). The findings will contribute to the field of product control for industrial applications and long-term fluorescence imaging.