A probabilistic approach to spectral analysis of growth-fragmentation equations

The growth-fragmentation equation describes a system of growing and dividing particles, and arises in models of cell division, protein polymerisation and even telecommunications protocols. Several important questions about the equation concern the asymptotic behaviour of solutions at large times: at what rate do they converge to zero or infinity, and what does the asymptotic profile of the solutions look like? Does the rescaled solution converge to its asymptotic profile at an exponential speed? These questions have traditionally been studied using analytic techniques such as entropy methods or splitting of operators. In this work, we present a probabilistic approach: we use a Feynman–Kac formula to relate the solution of the growth-fragmentation equation to the semigroup of a Markov process, and characterise the rate of decay or growth in terms of this process. We then identify the Malthus exponent and the asymptotic profile in terms of a related Markov process, and give a spectral interpretation in terms of the growth-fragmentation operator and its dual.     

The character and the wave front set correspondence in the stable range

We relate the distribution characters and the wave front sets of unitary representation for real reductive dual pairs of type I in the stable range.     

The behavior of differential forms under purely inseparable extensions

Let F be a field of characteristic 2. In this paper we give a complete computation of the kernel of the homomorphism $H_2^{m+1}(F)?H_2^{m+1}(L)$ induced by scalar extension, where $L/F$ is a purely inseparable extension (of any degree), $H_2^{m+1}(F)$ is the cokernel of the Artin–Schreier operator $?:{\mathrm{\Omega }}_F^m?{\mathrm{\Omega }}_F^m/\mathrm{d}{\mathrm{\Omega }}_F^{m?1}$ given by: $x\frac{\mathrm{d}{x}_1}{x_1}\wedge ?\wedge \frac{\mathrm{d}{x}_m}{x_m}?(x^2?x)\frac{\mathrm{d}{x}_1}{x_1}\wedge ?\wedge \frac{\mathrm{d}{x}_m}{x_m}+\mathrm{d}{\mathrm{\Omega }}_F^{m?1}$, where ${\mathrm{\Omega }}_F^m$ is the space of absolute m-differential forms over F and d is the differential operator. Other related results are included.     

Perturbative manifolds and the Noether generators of nth-order Poisson equations

A manifold that contains small perturbations will induce a perturbed partial differential equation. The partial differential equation that we select is the Poisson equation – in order to explore the interplay between the geometry of the manifold and the perturbations. Specifically, we show how the problem of symmetry determination, for higher-order perturbations, can be elegantly expressed via geometric conditions.     

Two-dimensional vortex sheets for the nonisentropic Euler equations: Nonlinear stability

We show the short-time existence and nonlinear stability of vortex sheets for the nonisentropic compressible Euler equations in two spatial dimensions, based on the weakly linear stability result of Morando and Trebeschi (2008) [20]. The missing normal derivatives are compensated through the equations of the linearized vorticity and entropy when deriving higher-order energy estimates. The proof of the resolution for this nonlinear problem follows from certain a priori tame estimates on the effective linear problem in the usual Sobolev spaces and a suitable Nash–Moser iteration scheme.     

Large offset far infrared laser lines generation from the C-O stretching Q-branch of 13CD3OD

2 laser of wide tunability to pump ¹³CD₃OD we could observe 10 new far infrared laser lines ranging from 109 μm to 472 μm. The lines were generated by pumping infrared absorbing transitions of large offset appertaining to the C-O stretching Q-branch. All lines were characterised in wavelength, polarisation, optimum pressure of operation and precise offset measurements. Received: 17 September 1996/Revised version: 18 November 1996     

An investigation of the Al2O3-CdSe interface in accumulation

The Al₂O₃−CdSe interface of a thin-film transistor is investigated in the frequency range 30 Hz-30 kHz under weak depletion and accumulation. The surface states are, most likely, located in the insulator Al₂O₃ with a concentration varying from 4·10¹⁸ to 10¹⁹ cm⁻³ eV⁻¹. The surface states have a negligible influence on the thin-film transistor operation.