A finite model property for RMImin

It is proved that the variety of relevant disjunction lattices has the finite embeddability property. It follows that Avron's relevance logic RMI _min has a strong form of the finite model property, so it has a solvable deducibility problem. This strengthens Avron's result that RMI _min is decidable. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

p型导电掺In的SnO_2薄膜的制备及表征

采用溶胶 凝胶提拉法成功地制备了p型导电掺In的SnO2 薄膜 .x射线衍射测试结果表明 ,掺In的SnO2 薄膜保持SnO2 的金红石结构 .吸收谱测试结果表明 ,掺In的SnO2 禁带宽度为 3 8eV .霍尔测量结果表明 ,空穴浓度与热处理温度有很大的关系 ,5 2 5℃为最佳热处理的温度 .铟锡原子比在 0 0 5— 0 2 0范围内 ,空穴的浓度与In的含量有直接的关系 ,并随In含量的增加而增加     

p—Si上电沉积Ni—W—P薄膜的结构与热稳定性

研究了ｐ－Ｓｉ上恒电流沉积Ｎｉ－Ｗ－Ｐ合金薄膜组成与结构的关系，讨论了镀层的组成、结构随沉积时间的变化．测定了非晶合金的晶体结构随热处理温度的改变以及ＤＴＡ曲线，结果表明，非晶Ｎｉ－Ｗ－Ｐ合金在晶化过程中形成两个纳米超微晶相，非晶Ｎｉ－Ｗ－Ｐ薄膜的热稳定性远高于通常使用的非晶Ｎｉ－Ｐ薄膜．     

透明导电氧化物的原理、问题与研究分析

现代光电子产品和能源技术都大量使用透明导电氧化物(TCO)薄膜.由于太阳能电池、平板显示器、发光二极管、短波长激光器、节能玻璃窗等应用领域日益增长的需求,TCO薄膜获得了越来越广泛的应用.文章总结了TCO薄膜的功能原理、应用需求和当前的研究方向,重点分析了p型TCO薄膜研究所要解决的关键问题(其中包括掺杂非对称性,性能退化与缺陷的生成,结构和变化的关系),指出了p型TCO薄膜制备的关键因素,研究的热点问题和蕴藏的研究机会.     

Theoretical study on the improvement of the doping efficiency of Al in 4H-SiC by co-doping group-IVB elements

The p-type doping efficiency of 4H silicon carbide (4H-SiC) is rather low due to the large ionization energies of p-type dopants. Such an issue impedes the exploration of the full advantage of 4H-SiC for semiconductor devices. In this study, we show that co-doping group-IVB elements effectively decreases the ionization energy of the most widely used p-type dopant, i.e., aluminum (Al), through the defect-level repulsion between the energy levels of group-IVB elements and that of Al in 4H-SiC. Among group-IVB elements Ti has the most prominent effectiveness. Ti decreases the ionization energy of Al by nearly 50%, leading to a value as low as ~0.13 eV. As a result, the ionization rate of Al with Ti co-doping is up to ~5 times larger than that without co-doping at room temperature when the doping concentration is up to 10¹⁸ cm^-3. This work may encourage the experimental co-doping of group-IVB elements such as Ti and Al to significantly improve the p-type doping efficiency of 4H-SiC.     

Dithienoindophenines: p‐Type Semiconductors Designed by Quinoid Stabilization for Solar‐Cell Applications

Compared with the dominant aromatic conjugated materials, photovoltaic applications of their quinoidal counterparts featuring rigid and planar molecular structures have long been unexplored despite their narrow optical bandgaps, large absorption coefficients, and excellent charge‐transport properties. The design and synthesis of dithienoindophenine derivatives (DTIPs) by stabilizing the quinoidal resonance of the parent indophenine framework is reported here. Compared with the ambipolar indophenine derivatives, DTIPs with the fixed molecular configuration are found to be p‐type semiconductors exhibiting excellent unipolar hole mobilities up to 0.22 cm² V^?1 s^?1, which is one order of magnitude higher than that of the parent IP‐O and is even comparable to that of QQT(CN)4‐based single‐crystal field‐effect transistors (FET). DTIPs exhibit better photovoltaic performance than their aromatic bithieno[3,4‐b]thiophene (BTT) counterparts with an optimal power‐conversion efficiency (PCE) of 4.07 %.     

Solvent-free deposition of hybrid halide perovskites onto thin films of copper iodide p-type conductor

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Electrical characterisation of phosphorus-doped ZnO thin films grown by pulsed laser deposition

Phosphorus-doped ZnO films were grown by pulsed laser deposition using a ZnO:P₂O₅-doped target as the phosphorus source with the aim of producing p-type ZnO material. ZnO:P layers (with phosphorus concentrations of between 0.01 to 1 wt%) were grown on a pure ZnO buffer layer. The electrical properties of the films were characterised from temperature dependent Hall-effect measurements. The samples typically showed weak n-type conduction in the dark, with a resistivity of 70 Ω cm, a Hall mobility of μ_n0.5 cm² V ⁻¹ s⁻¹ and a carrier concentration of n3×10¹⁷ cm⁻³ at room temperature. After exposure to an incandescent light source, the samples underwent a change in conduction from n- to p-type, with an increase in mobility and decrease in concentration for temperatures below 300 K.     

An alternative approach to investigate the origin of p-type conductivity in arsenic doped ZnO

P-type conductivity in MOCVD grown ZnO was obtained by directional thermal diffusion of arsenic from semi-insulating GaAs substrate. The films were single crystalline in nature and oriented along (002) direction. Ab initio calculations in the framework of density functional theory have been carried out with different chemical states of arsenic in ZnO. Present calculations suggested As_Zn–2V_Zn defect is a shallow acceptor and results in ferromagnetism in ZnO. The magnetic measurements of the samples indeed showed ferromagnetic ordering at room temperature. X-ray photoelectron spectra confirmed the presence of As_Zn and V_Zn. The core level chemical shift in binding energy of As_Zn indicated the formation of As_Zn–2V_Zn. Diffused arsenic substitutes zinc atom and creates additional zinc vacancies. The zinc vacancies, surrounding the oxygen atoms, result in unpaired O 2p electrons which in turn induce ferromagnetism in the samples.     

Mg,N掺杂β-Ga2O3光电性质的第一性原理计算

通过基于密度泛函理论的第一性原理计算,研究了Mg单掺杂、N单掺杂和不同浓度的Mg-N共掺杂β-Ga₂O₃的结构性质、电子性质和光学性质,以期获得性能比较优异的p型β-Ga₂O₃材料。建立了五种模型:Mg单掺杂、N单掺杂、1个Mg-N共掺杂、2个Mg-N共掺杂和3个Mg-N共掺杂β-Ga₂O₃。经过计算,3个Mg-N共掺杂β-Ga₂O₃体系的结构最稳定。此外,在5种模型中,3个Mg-N共掺杂β-Ga₂O₃体系的禁带宽度是最小的,并且N 2p和Mg 3s贡献的占据态抑制了氧空位的形成,从而增加了空穴浓度。因此,3个Mg-N共掺杂β-Ga₂O₃体系表现出优异的p型性质。3个Mg-N共掺杂体系的吸收峰出现明显红移,在太阳盲区的光吸收系数较大,这归因于导带Ga 4s、Ga 4p、Mg 3s向价带O 2p、N 2p的带间电子跃迁。本工作将为p型β-Ga₂O₃日盲光电材料的研究和应用提供理论指导。