Efficient Collocation Schemes for Singular Boundary Value Problems

We discuss an error estimation procedure for the global error of collocation schemes applied to solve singular boundary value problems with a singularity of the first kind. This a posteriori estimate of the global error was proposed by Stetter in 1978 and is based on the idea of Defect Correction, originally due to Zadunaisky. Here, we present a new, carefully designed modification of this error estimate which not only results in less computational work but also appears to perform satisfactorily for singular problems. We give a full analytical justification for the asymptotical correctness of the error estimate when it is applied to a general nonlinear regular problem. For the singular case, we are presently only able to provide computational evidence for the full convergence order, the related analysis is still work in progress. This global estimate is the basis for a grid selection routine in which the grid is modified with the aim to equidistribute the global error. This procedure yields meshes suitable for an efficient numerical solution. Most importantly, we observe that the grid is refined in a way reflecting only the behavior of the solution and remains unaffected by the unsmooth direction field close to the singular point.     

应力对M-Z型InP/InGaAsP-EAM偏振

采用Agilent 81910A光子全参量测试仪,首次实验研究了InP/In1－xGaxAs1－yPy-MQW（Multiple-Quantum-Well,MQW）材料与衬底间因应力而产生的M-Z型光调制器的PDL影响以及由此引起的由差分群时延(Differential Group Delay,DGD)表征的偏振模色散(Polarization Mode Dispersion,PMD).研究结果表明,半导体MQW光调制器的PDL与DGD是一致的.因此在半导体光器件的制作过程中,应尽可能地减小衬底与波导芯层之间的因残存应力的存在造成对光器件的高速性能的不利影响.     

FORMATION OF SINGULARITIES FOR A KIND OF QUASILINEAR NON－STRICTLY HYPERBOLIC SYSTEM

The author gets a blow-up result of C1 solution to the Cauchy problem for a first order quasilinear non-strictly hyperbolic system in one space dimension.     

Roles of SiH4 and SiF4 in growth and structural changes of poly-Si films

The structural properties of polycrystalline silicon films, prepared by plasma enhanced chemical vapor deposition system, with different flow rates of SiH₄/SiF₄ mixtures at 300 °C were investigated. This study indicates that the low hydrogen coverage on the growing surface, under optimum fluorine radicals, will be leaded to an improvement of crystallized area as compared with case of high hydrogen coverage surface. Moreover, the studies of the role of SiH₄ and SiF₄ radicals show that the SiH₄ radicals are important in the nucleation and growth of grains. However, SiF₄ radicals are effective in the structural change of grain boundaries regions and by this way, in the present system, establish the growth of grains under the dominant 〈1 1 0〉 direction. The stress investigation indicates that addition of high flow rate of SiF₄ in amorphous film, results in the nearly stress free films. Finally, we found that the changes in g-value reflect the changes in the intrinsic compressive and tensile stress in the both polycrystalline and amorphous silicon films.     

The influence of pulse duration on the stress levels in ablation of ceramics: A finite element study

We present a finite element model to investigate the dynamic thermal and mechanical response of ceramic materials to pulsed infrared radiation. The model was applied to the specific problem of determining the influence of the pulse duration on the stress levels reached in human dental enamel irradiated by a CO₂ laser at 10.6 μm with pulse durations between 0.1 and 100 μs and sub-ablative fluence. Our results indicate that short pulses with durations much larger than the characteristic acoustic relaxation time of the material can still cause high stress transients at the irradiated site, and indicate that pulse durations of the order of 10 μs may be more adequate both for enamel surface modification and for ablation than pulse durations up to 1 μs. The model presented here can easily be modified to investigate the dynamic response of ceramic materials to mid-infrared radiation and help determine optimal pulse durations for specific procedures.     

High energy asymptotics of the scattering amplitude for the Schrödinger equation

We find an explicit function approximating at high energies the kernel of the scattering matrix with arbitrary accuracy. Moreover, the same function gives all diagonal singularities of the kernel of the scattering matrix in the angular variables. This paper is dedicated to Jean-Michel Combes on the occasion of his sixtieth birthday.     

Stress concentration and effective stiffness of aligned fiber reinforced composite with anisotropic constituents

The paper addresses the problem of calculation of the local stress field and effective elastic properties of a unidirectional fiber reinforced composite with anisotropic constituents. For this aim, the representative unit cell approach has been utilized. The micro geometry of the composite is modeled by a periodic structure with a unit cell containing multiple circular fibers. The number of fibers is sufficient to account for the micro structure statistics of composite. A new method based on the multipole expansion technique is developed to obtain the exact series solution for the micro stress field. The method combines the principle of superposition, technique of complex potentials and some new results in the theory of special functions. A proper choice of potentials and new results for their series expansions allow one to reduce the boundary-value problem for the multiple-connected domain to an ordinary, well-posed set of linear algebraic equations. This reduction provides high numerical efficiency of the developed method. Exact expressions for the components of the effective stiffness tensor have been obtained by analytical averaging of the strain and stress fields.     

High resolution X-ray diffraction of GaN grown on Si (1 1 1) by MOVPE

High temperature GaN layers have been grown on Si (1 1 1) substrate by metalorganic vapor phase epitaxy (MOVPE). AlN was used as a buffer layer and studied as a function of thickness and growth temperature. The growth was monitored by in situ laser reflectometry. High resolution X-ray diffraction (HRXRD) revealed that optimized monocrystalline GaN was obtained for a 40 nm AlN grown at 1080 °C. This is in good agreement with the results of morphological study by scanning electron microscopy (SEM) and also confirmed by atomic force microscopy (AFM) observations. The best morphology of AlN with columnar structure and lower rms surface roughness is greatly advantageous to the coalescence of the GaN epilayer. Symmetric and asymmetric GaN reflections were combined for twist and stress measurements in monocrystalline GaN. It was found that mosaicity and biaxial tensile stress are still high in 1.7 μm GaN. Curvature radius measurement was also done and correlated to the cracks observations over the GaN surface.     

激光与材料参数对瞬态SBS 诱导的激光超声破坏效果的影响

 通过数值求解一维瞬态受激布里渊散射（SBS）声光耦合波方程，从理论上分析了泵浦激光参数及光学材料参数对SBS过程发生阈值的影响。以SBS过程中建立起来的应力场抗拉（压）强度和散射场的反射率为判据，分析了激光脉宽及作用区域长度对激光超声破坏材料效果的影响，探讨了短脉冲激光（约ns）引起的激光超声对材料的破坏机理；讨论了通过参数配置有效遏制SBS过程激光超声对光学材料的破坏问题。     

Evaluation of the Lazarus-Leblond constants in the asymptotic model of the interfacial wavy crack

The paper addresses the problem of a semi-infinite plane crack along the interface between two isotropic half-spaces. Two methods of solution have been considered in the past: Lazarus and Leblond [1998a. Three-dimensional crack-face weight functions for the semi-infinite interface crack-I: variation of the stress intensity factors due to some small perturbation of the crack front. J. Mech. Phys. Solids 46, 489-511, 1998b. Three-dimensional crack-face weight functions for the semi-infinite interface crack-II: integrodifferential equations on the weight functions and resolution J. Mech. Phys. Solids 46, 513-536] applied the “special” method by Bueckner [1987. Weight functions and fundamental fields for the penny-shaped and the half-plane crack in three space. Int. J. Solids Struct. 23, 57-93] and found the expression of the variation of the stress intensity factors for a wavy crack without solving the complete elasticity problem; their solution is expressed in terms of the physical variables, and it involves five constants whose analytical representation was unknown; on the other hand, the “general” solution to the problem has been recently addressed by Bercial-Velez et al. [2005. High-order asymptotics and perturbation problems for 3D interfacial cracks. J. Mech. Phys. Solids 53, 1128-1162], using a Wiener-Hopf analysis and singular asymptotics near the crack front.The main goal of the present paper is to complete the solution to the problem by providing the connection between the two methods. This is done by constructing an integral representation for Lazarus-Leblond's weight functions and by deriving the closed form representations of Lazarus-Leblond's constants.