盐酸伊达比星杂质A的合成工艺优化及其高效液相分析

通过对盐酸伊达比星脱羟基杂质A的合成研究，为盐酸伊达比星的质控标准提供参考。以盐酸伊达比星为起始原料，经过4步反应得到脱羟基杂质A。本文提供了盐酸伊达比星杂质A的制备方法以及高效液相色谱分析方法，为杂质含量控制提供了依据。该工艺可以稳定、快速制备高纯度脱羟基杂质A，制备总收率为57.20%，纯度为57.20%，其结构经¹H NMR， ¹³C NMR和MS(ESI)表征。     

ZnS∶Zn,Pb蓝粉在低压阴极射线激发下的应用

通过对ZnS∶Zn,Pb蓝色荧光粉进行表面包覆SiO2以改善其稳定性;In2O3材料的适量混合,提高了荧光粉的导电性,降低了它的起辉电压。采用沉淀法制备荧光屏,考察了阳极电压和阳极电流对亮度以及衰减过程的影响,实验结果表明ZnS∶Zn,Pb的性能优于ZnS∶Ag,Cl和ZnS∶Zn,可适用于FED等低压显示器。     

二次阳极氧化方法制备有序多孔氧化铝膜

通过二次阳极氧化方法制备多孔氧化铝膜与一次阳极氧化方法制备多孔氧化铝膜孔排布规律性的对比 ,结果发现 ,二次阳极氧化方法制取的多孔氧化铝膜孔排布规律性明显好于一次阳极氧化法制取的多孔膜 .在几个微米范围内 ,孔呈理想的六角排布 .去除一次阳极氧化膜后 ,二次阳极氧化得以在更良好的表面进行 ,制取的氧化铝膜孔规律性和有序度更高 .有序区域的尺寸与晶粒内的亚晶大小有一定关系     

自发发射与量子计算机存储单元的相干脱散

量子计算机存储单元的相干脱散，破坏量子态中的信息，是量子计算机难以实现的主要原因之一．本文在Rzazewski的工作基础上，针对两能级原子构造的存储单元，研究自发发射对存储单元相干脱散的影响 关键词：     

Reversible Decoherence of a Mesoscopic Superposition Driven by a Time—Dependent External Field

By using the normal-ordering technique in the coherent state representation,we discuss the dynamical evolution of the coherence of a Schrodinger cat state in a high Q cavity coupled to another resonator in the presence of external fields.During the progression of the coherence,we pay particular attention to the effect of the external fields,as well as to the initial phase of the Schrodinger cat state.     

Microwave-assisted Regioselective 1-O-Deacylation of Peracylated Glycopyranoses on Alumina

A facile, rapid and regioselective method for the 1-O-deacylation of peracylated glycopyranoses is described which occurs under mild conditions by absorption onto alumina using microwave irradiation.     

关于奇ATm核1/2+[411]转动带的系统分析

壳模型计算表明,1/2⁺[411]出现于¹⁵⁷Tm核的基态可能是由非轴对称形变造成的.但是新近从¹⁵⁷Yb衰变纲图给出的¹⁵⁷Tm低激发谱中,指认了一个建立在1/2⁺[411]带头上的基态转动带,并认为该带的性质是轴对称的,提取了该带的惯性参数与脱耦合参数.通过对奇ATm核1/2⁺[411]转动带的系统分析,强调了在¹⁵⁷Tm核中非轴对称γ自由度效应的重要性.     

脱镁叶绿素a和脱镁叶绿素b的联合同步荧光分析法

建立了脱镁叶绿素a和脱镁叶绿素b的联合同步荧光分析法。方法简便快速。脱镁叶绿素a和脱镁叶绿素b的线性范围分别为0～400ng/ml和0～200ng/ml,检出限分别为1ng/ml和0.5ng/ml。     

Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation

Patterned silicon nanocrystallite (SINC) films were fabricated on (100) orientation p-type boron-doped sificon wafer by the hydrogen ion implantation technique and the anodic etching method. The efficient field emission with low turn-on field of about 3.5V/μm at current density of 0.1μA/cm^2 was obtained. The emission current density from the SiNC films reached 1mA/cm^2 under a bias field of about 9.1V/μm. The experimental results demonstrate that there are great potential applications of the SiNC films for fiat panel displays. A surface treatment with hydrogen plasma was performed on the SiNC films and a significant improvement of emission properties was achieved.