SPECTRUM-PRESERVING ELEMENTARY OPERATORS ON B（X）

1.IntroductionLetXbeaninfinitedimensionalcomplexBanachspaceandB(X)theBanachalgebraofallboundedlinearoperatorsonX.ForTEB(X),a(T),asusual,willdenotethespectrumofT.Let4bealinearmapfromB(X)intoitself.4isspectrum-preservingifa(di(T))=a(T)forallTEB(X);4isspectrum-compressingifa(4(T))ga(T)forallTEB(X).Itisclearthatif4isunital(i.e.,ac(I)=I),thenacisspectrum-preserving(spectrum-compressing)ifandonlyif4preservesinvertibilityinbothdirections(preservesinvertibility),i.e.,4(T)isinvertibleifando…     

带复平移的奇异积分方程组

本文讨论了在实轴上带复平移的奇异积分方程组,包括含单个平移和两个平移的情况,给出了可解的充分条件和解的级数形式,并将其应用于带未知函数共轭和复平移的奇异积分方程。     

几类非对称典型域的扩充空间

本文引入了一类齐性复解析流形,可以看作 Grassmann 流形及[4]、[5]中引入的复流形(?)(r_1,…,r_p;s_1,…s_p)和(?)更一般的形式,并利用它来实现作者在[1]中给出的几类非对称典型域的扩充空间.     

On Best Approximations from RS-sets in Complex Banach Spaces

The concept of an RS-set in a complex Banach space is introduced and the problem of best approximation from an RS-set in a complex space is investigated. Results consisting of characterizations, uniqueness and strong uniqueness are established,     

Fabrication of Compound Lattice by Holographic Lithography

Some compound lattices in photonic crystals with large complete photonic band gaps, such as the diamond structure and the two-dimensional hexagonal compound structure, is desired for fabrication. A novel method for fabrication of compound lattices by holographic lithography is reported. The key point is phase modulation by photoelectrical control and multiple-exposure techniques. This technique introduces many advances: for instance,using the same coherent beams and without changing the position of the sample during multiple-exposure.     

复注及多孔注浆理论研究

针对柱面注浆方式，研究了有关渗透注浆的单孔复注及不同方式布孔时多孔注浆的相互影响等问题，推导出一些有价值的岩体注浆理论公式，可用于指导现场注浆工程的设计与施工．     

一类整除性定理

本给出复域上多元多项式环C[x1,x2…，xn]的一类整除性定理，它是[1]中整除定理的直接推广。     

Study on the in—plane electrical resistivity and thermoelectric power in single crystals of La2—xBaxCuO4

The in-plane electrical resistivity and thermoelectric power have been measured on single crystals of La_2-xBa_xCuO₄ at around x=0.125. The room temperature resistivity and thermopower have their maximum values at x=0.125, indicating that the carrier concentration is the minimum and the carriers are most strongly localized at x=0.125. The observed semiconductor-like behaviour can be well described by the weak-localized quasi-two-dimensional state. The steep rise in electric resistivity of the sample at x=0.125 below 70K is attributed to the formation of static stripe-order of holes and spins, which are pinned by the low-temperature tetragonal (LTT) structure, as discovered in La_1.48Nd_0.4Sr_0.12CuO₄. The temperature dependence of electric resistivity below 70K is still well described by the formula ρ∝ lnT. A definite change in the slope of thermopower is observed at the low-temperature orthorhombic-LTT structural phase transition temperature. The origin of the 1/8 anomaly is discussed in the text.     

在可交换四元数空间中的双曲方程的特征边值问题

讨论了一阶和二阶双曲复方程的特征边值问题.对其中两种线性方程,分别在不同的情况下获得通解和可解条件.而对于拟线性的二阶双曲复方程,证明了解的存在性和唯一性.