二元翼型风洞的侧壁干扰与抽气研究

在二元翼型风洞实验段中的侧壁边界层将引起模型展向流动的不均匀性，使预想的二元流动受到三元扭曲，引起实验数据的误差，目前消除或减少侧壁干扰的有效方法之一是采用侧壁抽吸技术。本文就抽吸的有效性，抽吸区域和阻尼材料等问题进行了讨论和分析，并对抽吸技术中的问题提出了一些看法。     

大型低速二元风洞侧壁边界层控制及对单段翼型实验结果的影响

本文简述了ＮＦ－３风洞二元实验段侧壁边界层吹除控制系统及具有吹气的模型实验方法，给出了不同吹气系数对风洞边界层的控制效果以及对相对厚度为７％的单段翼型实验结果的影响。初步实验研究结果表明，该控制系统能有效地改善风洞侧壁边界层的流动状态，减小侧壁干扰，改善翼型实验中的二元流动特性     

Sidewall-insert compound based on ZnO-treated aramid pulp fibers for run-flat tires

Abstract

To improve the endurance performance of run-flat tires by preventing the sidewall from folding at zero air pressure, a master batch of natural rubber and ZnO-treated aramid pulp (AP) is applied to the rubber sidewall-insert-layer compound. The mechanical, viscoelastic, and fatigue properties of the compounds are investigated by varying the AP content, and the endurance performance of actual run-flat tires is assessed. The results indicate that the mechanical properties are improved and the hysteresis is reduced as the AP content increased. The overall trend of the endurance times of the run-flat tires is consistent with the results of the DeMattia tests, constant-strain fatigue tests, and high-temperature tensile tests. The run-flat endurance time of the tire containing one part per hundred rubber (phr) of AP is superior to that of the tire containing 3 phr of AP because of the enhanced dispersion of the AP fibers.     

A cell electrofusion microfluidic chip using discrete coplanar vertical sidewall microelectrodes

A novel cell electrofusion microfluidic chip using discrete coplanar vertical sidewall electrodes has been designed, fabricated, and tested. The device contains a serpentine-shaped microchannel with 22 500 pairs of vertical sidewall microelectrodes patterned on two opposing vertical sidewalls of the microchannel. The adjacent microelectrodes on each sidewall are separated by coplanar SiO(2) -Polysilicon-SiO(2) /silicon. This design of coplanar discrete vertical sidewall electrodes eliminates the "dead area" present in previous designs using continuous three-dimensional (3D) protruding sidewall electrodes, and generates uniform electric field along the height of the microchannel, leading to a lower voltage required for cell fusion compared to designs using 2D thin-film electrodes. This device is tested to fuse NIH3T3 cells under a low voltage (～9 V). Almost 100% cells are aligned to the edge of the discrete microelectrodes, and cell-cell pairing efficiency reaches 70%. The electrofusion efficiency is above 40% of the total cells loaded into the device, which is much higher than traditional fusion methods and existing microfluidic devices using continuous 3D protruding sidewall microelectrodes.     

Sidewall flow stability in the MHD channel flows

The velocity distribution between two sidewalls is M-shaped for the MHD channel, flows with rectangular cross section and thin conducting walls in a strong transverse magnetic field. Assume that the dimensionless numbersR _m ?1,M, N? 1, and σ* and that the distance between two perpendicular walls is very long in comparison with the distance between two sidewalls. First, the equation for steady flow is established, and the solution of M-shaped velocity distribution is given. Then, an equation for stability of small disturbances is derived based on the velocity distribution obtained. Finally, it is proved that the stability equation for sidewall flow can be transformed into the famous Orr-Sommerfeld equation, in addition, the following theorems are also proved, namely, the analogy theorem, the generalized Rayleigh's theorem, the generalized Fjørtoft's theorem and the generalized Joseph's theorems.     

侧压式道气道流场特性研究

应用表面油流和压力测量技术,结合数值模拟方法研究了超燃冲压发动机侧压式进气道无支板和有支板两种典型工况的基本流动特性.结果表明:由侧壁诱发的后掠激波与底板边界层相互作用,形成一对逆向旋转的漩涡,该漩涡在下游不断发展并偏离底板,在出口截面形成一个低马赫数低总压区;支板的引入增加了压缩率,但同时导致底板与侧壁边界层严重分离,使进气道性能偏离设计工况.     

6H-SiC Schottky barrier source／drain NMOSFET with field-induced source／drain extension

A novel SiC Schottky barrier source/drain NMOSFET (SiC SBSD-NMOSFET) with field-induced source/drain (FISD) extension is proposed and demonstrated by numerical simulation for the first time. In the new device the FISD extension is induced by a metal field-plate lying on top of the passivation oxide, and the width of Schottky barrier is controlled by the metal field-plate. The new structure not only eliminates the effect of the sidewalls but also significantly improves the on-state current. Moreover, the performance of the present device exhibits very weak dependence on the widths of sidewalls.     

Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs

We investigate the effects of 60 Co γ-ray irradiation on the 130 nm partially-depleted silicon-on-isolator(PDSOI)input/output(I/O) n-MOSFETs. A shallow trench isolation(STI) parasitic transistor is responsible for the observed hump in the back-gate transfer characteristic curve. The STI parasitic transistor, in which the trench oxide acts as the gate oxide,is sensitive to the radiation, and it introduces a new way to characterize the total ionizing dose(TID) responses in the STI oxide. A radiation enhanced drain induced barrier lower(DIBL) effect is observed in the STI parasitic transistor. It is manifested as the drain bias dependence of the radiation-induced off-state leakage and the increase of the DIBL parameter in the STI parasitic transistor after irradiation. Increasing the doping concentration in the whole body region or just near the STI sidewall can increase the threshold voltage of the STI parasitic transistor, and further reduce the radiation-induced off-state leakage. Moreover, we find that the radiation-induced trapped charge in the buried oxide leads to an obvious front-gate threshold voltage shift through the coupling effect. The high doping concentration in the body can effectively suppress the radiation-induced coupling effect.     

A novel hanging bowl-shaped mask for the fabrication of vertical sidewall structures

Contact exposure is expected to occur in conventional lithography, and can be a source of process deviations (such as shrinking and distortion of templates) during reactive ion etching and inductively coupled plasma etching, as these deviations are induced by ion bombardment. This typically results in undesired sidewall effects, such as lower sidewall angles. Here we report a novel hanging bowlshaped lithography mask that can effectively minimize sidewall effects in lithography applications. As a test case, standard silicon carbide pillars with vertical sidewalls are fabricated using this mask. The mask could be used for fabrication of high-aspect-ratio structures with ultra-violet lithography.     

奥氏体不锈钢窄间隙焊缝侧壁未熔合相控阵超声检测*

针对核电站主管道奥氏体不锈钢窄间隙焊缝侧壁未熔合超声检测困难的问题,该文开展基于电子背散射衍射技术的相控阵超声检测研究,并结合全聚焦方法和相位相干成像方法抑制结构噪声。利用电子背散射衍射技术建立壁厚69.5 mm,且同时包含母材和焊缝的奥氏体不锈钢窄间隙焊缝模型。沿焊缝熔合线设置深度26.5 mm、高度3.0 mm的侧壁未熔合,经过仿真优化确定了中心频率2.25 MHz、32阵元以及45°纵波楔块的相控阵超声检测参数。仿真和实验检测结果显示,侧壁未熔合检测信噪比相差不超过0.6 dB,验证了所建模型的有效性。在此基础上,利用全聚焦方法和相位相干成像方法削弱结构噪声,检测信噪比较相控阵扇扫描图像分别提升2.3 dB和4.7 dB,且侧壁未熔合深度与高度定量误差均不超过6.7%。