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1.
R. Grosseuvres A. Comandini A. Bentaib N. Chaumeix 《Proceedings of the Combustion Institute》2019,37(2):1537-1546
The present work reports new experimental and numerical results of the combustion properties of hydrogen based mixtures diluted by nitrogen and steam. Spherical expanding flames have been studied in a spherical bomb over a large domain of equivalence ratios, initial temperatures and dilutions at an initial pressure of 100 kPa (Tini = 296, 363, 413 K; N2/O2 = 3.76, 5.67, 9; %Steam = 0, 20, 30). From these experiments, the laminar flame speed , the Markstein length L’, the activation energy Ea and the Zel'dovich β number have been determined. These parameters were also simulated using COSILAB® in order to verify the validity of the Mével et al. [1] detailed kinetic mechanism. Other parameters as the laminar flame thickness δ and the effective Lewis number Leeff were also simulated. These new results aim at providing an extended database that will be very useful in the hydrogen combustion hazard assessment for nuclear reactor power plant new design. 相似文献
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Thin Ca films were evaporated on Si(1 1 1) under UHV conditions and subsequently annealed in the temperature range 200–650 °C. The interdiffusion of Ca and Si was examined by ex situ Auger depth profiling. In situ monitoring of the Si 2p core-level shift by X-ray photoemission spectroscopy (XPS) was employed to study the silicide formation process. The formation temperature of CaSi2 films on Si(1 1 1) was found to be about 350 °C. Epitaxial growth takes place at T≥400 °C. The morphology of the films, measured by atomic force microscopy (AFM), was correlated with their crystallinity as analyzed by X-ray diffraction (XRD). According to measurements of temperature-dependent I–V characteristics and internal photoemission the Schottky-barrier height of CaSi2 on Si(1 1 1) amounts to qΦBn=0.25 eV on n-type and to qΦBp=0.82 eV on p-type silicon. 相似文献
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We obtain upper bounds for the tail distribution of the first nonnegative sum of a random walk and for the moments of the overshoot over an arbitrary nonnegative level if the expectation of jumps is positive and close to zero. In addition, we find an estimate for the expectation of the first ladder epoch. 相似文献
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《中国科学B辑(英文版)》2007,(6)
Five polymer bonded explosives (PBXs) with the base explosive ε-CL-20 (hexanitrohexaazaisowurtzi- tane), the most important high energy density compound (HEDC), and five polymer binders (Estane 5703, GAP, HTPB, PEG, and F2314) were constructed. Molecular dynamics (MD) method was employed to investigate their binding energies (Ebind), compatibility, safety, mechanical properties, and energetic properties. The information and rules were reported for choosing better binders and guiding formula- tion design of high energy density material (HEDM). According to the calculated binding energies, the ordering of compatibility and stability of the five PBXs was predicted as ε-CL-20/PEG > ε-CL-20/ Estane5703 ≈ε-CL-20/GAP > ε-CL-20/HTPB > ε-CL-20/F2314. By pair correlation function g(r) analyses, hydrogen bonds and vdw are found to be the main interactions between the two components. The elasticity and isotropy of PBXs based ε-CL-20 can be obviously improved more than pure ε-CL-20 crystal. It is not by changing the molecular structures of ε-CL-20 for each binder to affect the sensitivity. The safety and energetic properties of these PBXs are mainly influenced by the thermal capability (C°p) and density (ρ) of binders, respectively. 相似文献
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安全质量费用工期在网络计划中的系统优化研究 总被引:1,自引:0,他引:1
施工网络计划中安全、质量、费用、工期达到综合优化是工程管理决策追求的目标,在工程项目管理中对这4个指标进行全面系统分析,并且进行综合均衡优化,对于提高工程项目的综合效益至关重要.采取在网络计划所有可行的施工方案中寻求最优的方案组合,从而达到总目标的优化.并且通过一个实例来说明本方法的应用. 相似文献
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采用从头算CCSD(T)/6-311 G(2d,2p)//B3LYP/6-311G(d,p)方法,研究了自由基-分子反应F CH2CHCH3的各种不同的反应通道.该反应主要是通过复合物形成机制进行,即F分别加到碳碳双键的两端形成自由基复合物1和2.这两种亚稳态自由基会解离成三种产物:H C3H5F、CH3 C2H3F和HF C3H5.理论计算结果表明,生成CH3 C2H3F是反应的主要通道,而生成H C3H5F和HF C3H5对产物也有一定的贡献.这一结果和实验符合得很好. 相似文献
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We have proposed a mechanism of nonideality, i.e., the temperature dependence of the ideality factor, in nearly ideal Au/n-Si Schottky barriers. Because of the nature of metal-induced gap states, positively ionized defects close to the interface are considered to cause local lowering of the Schottky barrier height (SBH) due to downward bending of the energy band. These positively charged defects become neutralized in equilibrium with the Fermi level due to the band bending, when they are very close to the interface. However, because the SBH lowering disappears by the neutralization of donor, the energy level of donor with a usual energy level scheme rises above the Fermi level after the neutralization. This contradiction to the equilibrium neutralization is resolved by Si self-interstitial with a large negative-U property, which is generated by the fabrication process. The energy level of the donor estimated from the SBH lowering is in good agreement with that of theoretical calculation of Si self-interstitial. Thus, the defect is concluded to be the Si self-interstitial, which is distributed to more than 10 Å depth from the interface. 相似文献