Phasenbeziehungen und Natriumionenleitung im quasi-binären System Na2SiF6/Na3AlF6

Phase Relations and Sodium Ion Conductivity within the Quasi-binary System Na₂SiF₆/Na₂AIF₆ . The phase diagram of the Na₂SiF₆/Na₃AlF₆ system has been determined by means of x-ray powder diffraction, thermal analysis and conductivity measurements in the sub-solidus region. Na₃AlF₆ accomodates up to 73 mol.-% Na₂SiF₆ maintaining the crystal structure type. The sodium ion conductivity increases by about five orders of magnitude upon doping Na₃AlF₆ with Na₂SiF₆.     

A possible counterexample to well posedness of entropy solutions and to Godunov scheme convergence

A particular case of initial data for the two-dimensional Euler equations is studied numerically. The results show that the Godunov method does not always converge to the physical solution, at least not on feasible grids. Moreover, they suggest that entropy solutions (in the weak entropy inequality sense) are not well posed.

     

Roles of SiH4 and SiF4 in growth and structural changes of poly-Si films

The structural properties of polycrystalline silicon films, prepared by plasma enhanced chemical vapor deposition system, with different flow rates of SiH₄/SiF₄ mixtures at 300 °C were investigated. This study indicates that the low hydrogen coverage on the growing surface, under optimum fluorine radicals, will be leaded to an improvement of crystallized area as compared with case of high hydrogen coverage surface. Moreover, the studies of the role of SiH₄ and SiF₄ radicals show that the SiH₄ radicals are important in the nucleation and growth of grains. However, SiF₄ radicals are effective in the structural change of grain boundaries regions and by this way, in the present system, establish the growth of grains under the dominant 〈1 1 0〉 direction. The stress investigation indicates that addition of high flow rate of SiF₄ in amorphous film, results in the nearly stress free films. Finally, we found that the changes in g-value reflect the changes in the intrinsic compressive and tensile stress in the both polycrystalline and amorphous silicon films.     

基于校园网的实验管理系统的设计

主要讨论了应用实验室管理系统的必要性,并从用户需求分析、系统总体设计、功能模块的设计等方面对B/S实验室管理系统的开发进行了详细的阐述。     

Acoustic reflection from a baffled elastic/piezoelectric plate

A finite difference/boundary integral procedure to determine the acoustic reflected pressure from a fluid-loaded bi-laminated plate is described. The bi-laminate is composed of a piezoelectric layer and an elastic layer in contact with the fluid, and is held by an acoustically hard baffle. In the numerical model, the fluid pressure at fluid/solid interface is replaced by a continuum of point sources weighted by the normal acceleration of the elastic plate, and the governing equation system is solved in the solid domain. With the normal acceleration found, the reflected pressure in the fluid is determined by an integral expression involving the Green's function. It is demonstrated that an appropriate applied voltage potential across the piezoelectric layer has the effect of cancelling either the reflected or scattered pressure of the plate at any chosen field points in the fluid. Project supported by the National Natural Science Foundation of China (No. 10172039).     

A WKB analysis of the buckling condition for a cylindrical shell of arbitrary thickness subjected to an external pressure

We consider the plane-strain buckling of a cylindrical shellof arbitrary thickness which is made of a Varga material andis subjected to an external hydrostatic pressure on its outersurface. The WKB method is used to solve the eigenvalue problemthat results from the linear bifurcation analysis. We show thatthe circular cross-section buckles into a non-circular shapeat a value of µ₁ which depends on A₁/A₂ and a mode number,where A₁ and A₂ are the undeformed inner and outer radii, andµ₁ is the ratio of the deformed inner radius to A₁. Inthe large mode number limit, we find that the dependence ofµ₁ on A₁/A₂ has a boundary layer structure: it is constantover almost the entire region of 0 < A₁/A₂ < 1 and decreasessharply from this constant value to unity as A₁/A₂ tends tounity. Our asymptotic results for A₁ – 1 = O(1) and A₁– 1 = O(1/n) are shown to agree with the numerical resultsobtained by using the compound matrix method.     

正交各向异性矩形板受迫振动的三维分析

从正交各向异性三维弹性动力学的控制方程出发，在求得四边简支矩形板自由振动频率和位移振型的基础上，构造了受迫振动的位移函数；利用自由振动位移振型的正交性，将控制方程的空间变量和时间变量分离，得到了广义质量、广义力和频率表示的关于时间的2阶常微分方程，从而得到了正交各向异性弹性矩形板在受迫振动下的位移场和应力场．给出了本文方法与薄板理论的算例．