水热法合成K0.5Bi0.5TiO3纳米陶瓷粉体

K_0.5Bi_0.5TiO₃(KBT)nanocrystalline particles were hydrothermally synthesized from Bi(NO₃)₃·5H₂O, TiO₂ and KOH. The crystal phase, chemical composition and microstructure were characterized by XRD, XRF, Raman scattering spectroscopy and TEM. The results indicated that the products were pure perovskite structured K_0.5Bi_0.5TiO₃ with chemical stoichiometry and perovskite structure. The TEM observation revealed that the particles possessed a feature of cubic shape and a nano-scale of about 40 nm. The KBT ceramics sintered at 1 040 ℃ from hydrothermal powders show higher density and better electric properties than that prepared by a solid-state reaction method.     

管式炉中半导体激光器巴条Au80Sn20焊料封装研究

为了提高半导体激光器的封装质量和效率,引入管式炉利用夹具进行批量封装。由于封装质量的好坏直接影响半导体激光器的输出特性和使用寿命,利用MOCVD生长808 nm芯片,重点分析了管式炉温度和封装时间对半导体激光器巴条双面金锡封装质量的影响。利用X射线检测、结电压、光电特性参数和smile效应测试手段,确定了管式炉封装半导体激光器巴条的最优封装条件,为以后的产业化提供了指导意义。     

Lights and Shadows of DMSO as Solvent for Tin Halide Perovskites

In 2020 dimethyl sulfoxide (DMSO), the ever-present solvent for tin halide perovskites, was identified as an oxidant for Sn^II. Nonetheless, alternatives are lacking and few efforts have been devoted to replacing it. To understand this trend it is indispensable to learn the importance of DMSO on the development of tin halide perovskites. Its unique properties have allowed processing compact thin-films to be integrated into tin perovskite solar cells. Creative approaches for controlling the perovskite crystallization or increasing its stability to oxidation have been developed relying on DMSO-based inks. However, increasingly sophisticated strategies appear to lead the field to a plateau of power conversion efficiency in the range of 10–15 %. And, while DMSO-based formulations have performed in encouraging means so far, we should also start considering their potential limitations. In this concept article, we discuss the benefits and limitations of DMSO-based tin perovskite processing.     

An investigation on surface tensions of Pb-free solder materials

Surface tensions of some Pb-free solder systems such as Ag–Bi–Sn with cross-sections Ag/Bi = 1/1, Ag/Bi = 1/2, Ag/Bi = 2/1, In–Sn–Zn with cross-sections Sn/In = 1/1, Sn/In = 1/3 and (Ag₇Cu₃)_100?x Sn_x with cross-section Ag/Cu = 7/3 are calculated from the sub-binary surface tension data using the models, such as the Muggianu, Kohler, Toop models, Butler’s equation and Chou’s General Solution Model (GSM) at 873, 923 and 1073 K, respectively. The surface tension of In–Sn–Zn increases wavily with increasing amount of Zn and it is found that the best models are the GSM for both cross-sections in question while GSM becomes the best model for (Ag₇Cu₃)_100?x Sn_x alloy in the whole experimental range. Moreover, the surface tension of (Ag₇Cu₃)_100?x Sn_x decreases slightly with increasing amount of Sn. The Muggianu, Butler and Butler models are determined as the best models for the cross-sections in the order given above for entire measurement range, respectively, and the surface tension of Ag–Bi–Sn decreases slightly with an increasing amount of Bi and Ag but increases with increasing Sn in liquid alloys.     

Beyond Perovskite Solar Cells: Tellurium Iodide as a Promising Light‐Absorbing Material for Solution‐Processed Photovoltaic Application

Searching new light‐absorbing materials to replace toxic lead halide in solar cells is very important and highly desirable. In this research, we firstly demonstrated that tellurium iodide (TeI₄) could be used as a light‐absorbing material in solar cells due to its suitable optical band gap and the active lone‐pair electron orbital in Te⁴⁺. The best power conversion efficiency (PCE=3.56%) was achieved with a concentration of 0.9 M TeI₄ in DMF:DMSO (4 : 1, v,v) without any heat treatment or antisolvent dripping. Our study indicates the promising potential of TeI₄ for photovoltaic and optoelectronic applications.     

Fatigue damage behavior of a surface-mount electronic package under different cyclic applied loads

This paper studies and compares the effects of pull-pull and 3-point bending cyclic loadings on the mechanical fa- tigue damage behaviors of a solder joint in a surface-mount electronic package. The comparisons are based on experimental investigations using scanning electron microscopy （SEM） in-situ technology and nonlinear finite element modeling, respec- tively. The compared results indicate that there are different threshold levels of plastic strain for the initial damage of solder joints under two cyclic applied loads; meanwhile, fatigue crack initiation occurs at different locations, and the accumulation of equivalent plastic strain determines the trend and direction of fatigue crack propagation. In addition, simulation results of the fatigue damage process of solder joints considering a constitutive model of damage initiation criteria for ductile materials and damage evolution based on accumulating inelastic hysteresis energy are identical to the experimental results. The actual fatigue life of the solder joint is almost the same and demonstrates that the FE modeling used in this study can provide an accurate prediction of solder joint fatigue failure.     

高温无铅BaTiO_3-(Bi_(1/2)Na_(1/2))TiO_3正温度系数电阻陶瓷阻抗和介电谱分析

采用固相反应法制备了Y2O3施主掺杂的92 mol%BaTiO3-8 mol%(Bi1/2Na1/2)TiO3(BBNT8)高温无铅正温度系数电阻(positive temperature coe?cient resistivity,PTCR)陶瓷.利用透射电镜观察材料的显微结构,发现陶瓷的显微结构主要包括晶粒和晶界两部分,观察不到明显的壳层结构.进一步利用交流阻抗谱研究了陶瓷的宏观电学性能,发现陶瓷的总电阻是晶粒和晶界两部分的贡献,而晶粒电阻很小,在居里温度以上变化不大,材料的PTCR效应主要是晶界部分的贡献.当温度高于居里温度时,随着温度的升高,晶界介电常数逐渐减小,导致势垒增加,晶界电阻增大,从而产生正温度系数效应.最后,通过测试材料的介电频谱特性,研究计算了陶瓷的室温电阻率.     

Effect of indium content and rapid solidification on microhardness and micro‐creep of Sn‐Zn eutectic lead free solder alloy

The Sn‐Zn alloys have been considered as lead‐free solders. In this paper, the effect of 0.0, 0.5, 1.0, 1.5 and 2.0 wt.% Indium as ternary additions on melting temperature, structure, microhardness and micro‐creep of the Sn‐9Zn lead‐free solders were investigated. It is shown that the alloying additions of Indium to the Sn‐Zn binary system result in a suppression of the melting point to 187.9 °C. From x‐ray diffraction analysis, a new intermetallic compound phase, designated β‐In₃Sn is detected. The formation of an intermetallic compound phase causes a pronounced increase in the electrical resistivity and mechanical strength. Also, an interesting connection between dynamic Young's modulus and the axial ratio (c/a) of the unit cell of the β‐Sn was found in which Young's modulus increases with increasing the axial ratio (c/a). The ternary Sn‐9Zn‐xIn exhibits creep resistance superior to Sn‐9Zn binary alloy. The better creep resistance of the ternary alloy is attributed to solid solution effect and precipitation of In₃Sn in the Sn matrix. The addition of small amounts of In is found to refine the effective grain size and consequently, improves hardness. The 89%Sn‐9%Zn‐2%In alloy is a lead‐free solder designed for possible drop‐in replacement of Pb‐Sn solders. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)