Evaluation of Charged Defect Energy in Two-Dimensional Semiconductors for Nanoelectronics: The WLZ Extrapolation Method

Defects play a central role in controlling the electronic properties of two-dimensional (2D) materials and realizing the industrialization of 2D electronics. However, the evaluation of charged defects in 2D materials within first-principles calculation is very challenging and has triggered a recent development of the WLZ (Wang, Li, Zhang) extrapolation method. This method lays the foundation of the theoretical evaluation of energies of charged defects in 2D materials within the first-principles framework. Herein, the vital role of defects for advancing 2D electronics is discussed, followed by an introduction of the fundamentals of the WLZ extrapolation method. The ionization energies (IEs) obtained by this method for defects in various 2D semiconductors are then reviewed and summarized. Finally, the unique defect physics in 2D dimensions including the dielectric environment effects, defect ionization process, and carrier transport mechanism captured with the WLZ extrapolation method are presented. As an efficient and reasonable evaluation of charged defects in 2D materials for nanoelectronics and other emerging applications, this work can be of benefit to the community.     

四（对-羟基苯基）卟啉氧合配合物的室温固相合成，表征及氧合能力

采用固相反应合成了四羟基苯基卟啉与与Fe^2＋,Co^2＋金属离子的配合物,在室温下,将其与分子O2作用,提纯后得到两种固态氧合配合物．通过元素分析、红外光谱（IR）、核磁共振氢谱（^1HNMR）、电导、热分析（TG／DTA）、紫外光谱（UV）等测试手段确定了氧合配合物的组成为[Co·THPP·O2]（NO3）2·2H2O、[Fe·THPP·O2]Cl2·2H2O]，可知1mol配合物吸收了1molO2,采用失重法测定了氧合配合物中的配位氧,确定1mol金属配合物吸收1molO2形成超氧配合物．     

基于CCD采集的Mach-Zehnder干涉条纹图的处理算法

Mach-Zehnder干涉仪适用于研究气体密度迅速变化的状态。由于气体折射率的变化与其密度的变化成正比,而折射率的变化将使通过气体的光线有不同的光程,因此可通过干涉臂变化对干涉条纹图像效果的影响得到气体密度。实测中,采用图像采集卡和CCD来接收Mach-Zehnder干涉仪产生的条纹图像,再通过计算机对条纹图像的条纹间距进行处理,从而得到气体密度的变化状态。从光干涉理论出发,对Mach-Zehnder干涉条纹图像特征进行了分析,建立了Mach-Zehnder干涉条纹的数学模型,并根据此模型设计了处理Mach-Zehnder干涉条纹图像的算法。算法包括图像的预处理(即图像的噪声提取)、图像的二值化及图像的细化。     

Ultrafast carrier dynamics in ferromagnetic InGaMnAs

We have carried out an ultrafast time-resolved differential reflectivity study of a ferromagnetic semiconductor InGaMnAs and made a systematic comparison with low-temperature grown and high-temperature grown InGaAs reference films. Very short carrier lifetimes (2 ps) were observed in InGaMnAs and the low-temperature grown InGaAs film, but not in the high-temperature grown InGaAs film. We attribute the short lifetimes to carrier trapping by mid-gap states introduced during low-temperature MBE growth. Furthermore, at long times, we observed periodic oscillations in the differential reflectivity signal with period 20 ps, which we interpret as coherent acoustic phonons.     

横向位移双曝光散斑图维纳谱的信息分布

讨论了横向位移双曝光散斑图维纳谱的信息分布，并由此导出杨氏纹图的一般表达式。讨论了条纹可见度与应变，面内转动，照明光束直径与条纹图图空间坐标的关系，指出了在条纹可见度影响下最大可见条纹数目。还讨论了散斑衬比与衍射晕的关系。     

应变Si1-xGex层中p型杂质电离常温和低温特性

本文采用解析的方法计算了应变Si1-xGex层中p型杂质电离度与Ge组分x、温度T以及掺杂浓度N的关系.发现常温时,在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度的先变小,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加先变大,而后几乎不变;重掺杂时,杂质电离能变为0后,杂质电离度为1.低温下,轻掺杂时,载流子低温冻析效应较为明显,杂质的电离度普遍较小,当掺杂浓度大于Mott转换点时,载流子冻析效应不再明显,电离率迅速上升到1.在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度先变小,后变大,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加变大;重掺杂时,杂质电离能变为0后,杂质电离度为1.     

Optical modulation and digital demodulation of an in-plane moiré carrier

A rotational mismatch of gratings is used to generate a fringe carrier of an in-plane moiré pattern so that specimen deformation shows itself in the form of modulation of the carrier frequency. As both the unmodulated and modulated carriers are the patterns without fringe-loop or fringe-connection, they are automatically numbered with monotonical increasing orders by a digital image processing system without any ambiguity. The orders at every pixel of the image are determined by interpolation of the orders of the tracked fringes to establish two grey image files, from the difference of which, the orders of the in-plane displacement moiré are displayed with grey-level variation.     

双相干点光源干涉的一般分析

讨论了双相干点光源的三维空间干涉场的一般数学描述,分析了3个不同截面处的干涉强度的空间分布情况,并给出了相干相长点的计算机模拟图样.该结果也适用于其他类型波的相干叠加场分布.     

散斑条纹的快速高精度处理技术

本文提出一种快速高精度散斑杨氏条纹(斑纹)场处理方法——同态阀值滤波法。用它实现了散斑场条纹的快速、逐点连续高精度处理。     

利用莫尔条纹的准正弦特性的三维轮廓术

分析了两个矩形光栅迭合产生的莫尔条纹的光强分布特性，通过选择适当的光栅参数，可得到一个近似的正弦分划板，并把它用于三维面形测量中，实验结果表明，这种方法简单，易于自动处理，有广泛的实用价值。