玻璃陶瓷材料中Tm3+离子红外到蓝色上转换发光

系统研究了PbF2+GeO2+WO3ⅩⅣTmF3玻璃陶瓷材料中,在近红外光(1.06μm)激发下,Tm3+离子的发光特性.实验中观测到Tm3+离子的两组峰值位置分别在20920cm-1和22173cm-1的蓝色上转换发光,并证实这两组上转换发光分别与吸收三个和四个光子有关,同时建立了上转换发光的模型.为了选择最佳掺杂浓度,详细地测量了Tm3+离子峰值为20920cm-1的蓝色上转换发光强度与TmF3浓度的关系.     

Electrical properties and memory effect in the field effect transistor based on organic ferroelectric insulator and pentacene

We have fabricated a field effect transistor (FET) based on an organic ferroelectric insulator and molecular conductor, and investigated the electrical properties and memory effects on the PEN-FET. We have observed a drastic change in the drain current at around the coercive electric fieldE _c of the organic ferroelectric insulator in not only a FET (PEN-FET) based on a pentacene (PEN) film but also a FET (IPEN-FET) based on an iodine doped PEN film. The magnitude of the change of the drain current for the IPEN-FET is 200 times larger than that for the PEN-FET. It is expected from these results that the PEN-FET (especially the IPEN-FET) is an improvement in such devices, since it operates at a low gate electric field accompanied by the appearance of the spontaneous polarization in the organic ferroelectric insulator. In addition, we have found that the drain current for the PEN-FET does not return to the initial drain current ofE _G =0 V/cm for more than one week, even if the gate electric field is changed to 0 V/cm from 500 V/cm(>E _c ). From these results, it is suggested that the PEN-FET becomes a memory device.     

Study of archaeological ceramics by total-reflection X-ray fluorescence spectrometry: Semi-quantitative approach

Total-reflection X-ray fluorescence spectrometry has been compared with Instrumental Neutron Activation Analysis in order to test its potential application to the study of archaeological ceramics in the archaeometric field. Two direct solid non-chemical sample preparation procedures have been checked: solid sedimentation and solid chemical homogenization. For sedimentation procedure, total-reflection X-ray fluorescence allows the analysis of the elemental composition with respect to the size fraction but not the average evaluation of the composition. For solid chemical homogenization procedure, total-reflection X-ray fluorescence provides precise (from 0.8% to 27% of coefficient of variation) and accurate results (from 91% to 110% of recovery) for 15 elements (Cr, Hf, Ni, Rb, Al, Ba, Ca, K, Mn, Ti, V, Cu, Ga, Y and Fe) with an easy sample preparation process of the solid clay and without previous chemical treatment. The influence of the particle sizes has been checked by total-reflection X-ray fluorescence sample angle scans and anomalous behaviors have been found for three additional detected elements: As, Sr and Zn, which can be attributed to interference effects of the mineral grain sizes of their associated chemical phases in the total-reflection X-ray fluorescence interference region. The solid chemical homogenization procedure produces data useful for archaeological interpretation, which is briefly illustrated by a case-study. Finally, the decantation procedure data can be also useful for size chemical speciation and, consequently, for alternative environmental total-reflection X-ray fluorescence applications.     

Effect of post-metallization annealing on the ferroelectric properties of sol-gel derived PZT thin films

A series of monolithic Pt-PZT-Pt capacitors was prepared based on sol-gel derived PZT 53/47 films fired to 700 C. After deposition of top Pt electrodes, the capacitors were subjected to post-metallization annealing (PMA) temperatures of 100 C to 700 C. Dielectric and ferroelectric (FE) characterizations were performed. Increasing the PMA temperature produced lower values of spontaneous and remanent polarizations, dielectric constant and leakage currents. The observations are correlated with a proposed FE capacitor model.     

后退火温度对溅射沉积Pb(Zr0.52Ti0.48)O3铁电薄膜结构和性能的影响

在具有Ti缓冲层的Pt(111)底电极上,用射频溅射工艺在较低的衬底温度(370℃)和纯Ar气氛中沉积Pb(Zr0.52Ti0.48)O3(PZT)薄膜,沉积过程中基片架作15°摇摆以提高膜厚的均匀性。然后将样品在大气中进行5min快速热退火处理,退火温度550-680℃。用XRD、SEM分析薄膜的微结构,RT66A标准铁电测试系统测量样品的铁电和介电性能。结果表明,所沉积的Pt为(111)取向,仅当后退火温度高于580℃,沉积在Pt(111)上的PZT薄膜才能形成钙钛矿结构的铁电相,退火温度在580-600℃时结晶为(110)择优取向,退火温度高于600℃时结晶为(111)择优取向。PZT薄膜的极化强度随退火温度的升高而增加,但退火温度超过650℃时漏电流急剧上升,因此退火处理的温度对PZT薄膜的结构和性能有决定性的影响。     

氟氧化物陶瓷的多谱线上转换发光

以氧化硅、氟化铅为基质制备了Er3 :Yb3 共掺杂氟氧化物陶瓷 ,X 射线分析表明陶瓷中存在着 β PbF2 晶相 ,沉积在其中的稀土离子由于具有很低的无辐射跃迁几率而显示出良好的上转换性能。Er3 ,Yb3 离子之间存在的多种能量传递通道 ,导致稀土离子十分丰富的上转换谱线的出现。     

Nd掺杂的Bi4Ti3O12变温X射线衍射分析

利用变温X射线衍射技术，在预烧过程中分析了Nd掺杂Bi4Ti3O12后生成Bi3.15Nd0.85Ti3O12（BNT）相的形成过程以及微结构的变化．实验观察到以30℃／min的升温速率，BNT相在700℃时开始形成，其衍射峰强度随温度的继续升高而增强，衍射峰半高宽随烧结时间延长而减小．X射线衍射分析结果表明，在900℃恒温条件下，烧结约2h，可形成单一的BNT相．     

Characterisation of raw materials for production of ceramics

The aim of this paper is to characterize some raw materials used for ceramics material production. Five samples of clay have been analyzed. It has been carried out a patterned sampling in a quarry in Rosarno (South Italy). Chemical-physical properties on clay samples are determined. Test pieces have been prepared and physical properties after firing are determined by DSC thermal analysis, XRD analysis and X-ray fluorescence. It is important to note the high amount of Fe₂O₃. The mixture principally contains quartz, illite and oligoclase. It has been observed the colour and the shape after firing: predominant colour is red. In this case the clay has been used in mixtures covered with glazes. The colour of internal clay is hidden by opaque of glazes. The analysed raw materials can be used in a slip for single fired red tiles. The A2sp clay produces best ceramics at 1000°C.     

手性液晶掺杂剂（S）—4‘—辛氧基—4—（2—酰氧基—丙氧基）联苯的合成

手性液晶掺杂剂（Ｓ）┐４┐辛氧基┐４┐（２┐酰氧基┐丙氧基）联苯的合成马汝建李培荣国斌＊（华东理工大学化学系上海２００２３７）关键词铁电液晶材料，手性液晶掺杂剂，合成，手征性１９９７－０２－０３收稿，１９９７－０８－０７修回铁电液晶显示器所用的材料...     

新型陶瓷材料的光激励发光性质研究

针对以往电子俘获光存储材料存在的问题，利用高温固相反应发制备了一种Eu^2 掺杂的氟氧化物玻璃陶瓷，研究表明在该材料中具有光激励发光(PSL)特性，并可用于电子俘获光存储。XRD分析表明该材料含有大量的BaF2微晶。根据其与BaF2相似的发光特性，推断玻璃陶瓷的PSL有可能来源于微晶中Eu^2 的5d-4f发射。但是决定光激励发光过程中的电子(空穴)陷阱的存在方式、电子迁移途径都有待进一步探讨的问题。与传统的BaFCl：Eu相比，这种材料的光激励发光衰减速度较慢。