Proton and alpha evaporation spectra in low energy 12C and 16O induced reactions

Proton and alpha particle spectra have been measured in the ¹²C+⁹³Nb and ¹²C+⁵⁸Ni reactions at E(¹²C)=40 and 50 MeV and in the ¹⁶O + ⁹³Nb reaction at E(¹⁶O) =75 MeV. The spectra are compared with the statistical model calculations. The shapes of the calculated spectra are in agreement with experimental data except for the alpha spectrum in the ¹²C + ⁹³Nb reaction at 40 MeV. The observed evaporation bump is at ∼2 MeV lower energy compared to the calculated one. This discrepancy could imply alpha particle emission from a deformed configuration before compound nucleus formation at this near Coulomb barrier beam energy.     

Cross section of the impact single ionization of B2＋ by H＋

The ionization process of B2+ by H+ impact is studied using the continuum-distorted-wave eikonal-initial-state (CDW-EIS) method and the modified free electron peak approximation (M-FEPA), respectively. Total, single-, and double- differential cross sections from 1s and 2s orbitals are presented for the energy range from 10 keV/u to 10 MeV/u. Comparison between the results from the two methods demonstrates that the total and single-differential cross sections for the high-energy incident projectile case can be well evaluated using the simple M-FEPA model. Moreover, the M-FEPA model reproduces the essential features of the binary-encounter (BE) bump in the double-differential cross sections. Thus, the BE ionization mechanism is discussed in detail by adopting the M-FEPA model. In particular, the double- and single-differential cross sections from the 2s orbital show a high-energy hip, which is different from those from the 1s orbital. Based on Ref. [1], the Compton profiles of B2+ for 1s and 2s orbitals are given, and the hips in DDCS and SDCS from the 2s orbital are explained.     

Design rule of indium bump in infrared focal plane array for longer cycling life

In light of the proposed equivalent method, a three-dimensional structural modeling of InSb infrared focal plane arrays (IRFPAs) is created, and the simulated strain distribution is identical to the deformation distribution on the top surface of InSb IRFPAs. After comparing the deformation features at different regions with the structural characteristics of IRFPAs, we infer that the flatness of InSb IRFPAs will be improved with a thinner indium bump array, and this inference is verified by subsequent simulation results. That is, when the diameter of indium bump is smaller than 20 μm, the simulated Z-components of strain on the whole top surface of InSb IRFPAs is uniform, and the deformation amplitude is small. When the diameter of indium bump is larger than 28 μm, the simulated Z-components of strain increases rapidly with the thicker indium bump, and the flatness of InSb IRFPAs is worsened rapidly. According to the changing trend of deformation amplitude with diameters of indium bump, and employing element pitches normalization method, a design rule of indium bump is proposed. That is, when the diameter of indium bump is shorter than 0.4 times the element pitch, the flatness of InSb IRFPAs is in an acceptable range. This design rule was supported by different IRFPAs with different formats delivered by several main research groups for achieving a longer cycling life.     

Effects of controllable process factors on Al rear surface bumps in Si solar cells

High efficiency solar cells require good back surface field passivation and high back reflectance in the rear Al region. In module processes, wafer-based solar cell can break through stress during soldering uneven rear aluminum surfaces - a serious problem that affects throughput. This work examined rear surfaces with respect to controllable process factors such as ramping and cooling rates during rapid thermal processing, and the fineness of aluminum powder used in the screen-printed paste. A faster ramp up rate resulted in a uniform temperature gradient between the aluminum and silicon surfaces. As a results, the bumps on the aluminum surface were small and of high density. Fine aluminum metal powder in the paste for screen-printing contact points resulted in large distribution, high density bumps. Bumps formed during cooling in metallization, their sizes and densities were dependent the on uniformity of the aluminum and silicon liquid wetting of the silicon surface.     

A New Proof of Bartholdi's Theorem

We give a new proof of Bartholdi's theorem for the Bartholdi zeta function of a graph. Supported by Grant-in-Aid for Science Research (C)     

Approximation by smooth functions with no critical points on separable Banach spaces

We characterize the class of separable Banach spaces X such that for every continuous function and for every continuous function there exists a C¹ smooth function for which |f(x)−g(x)|?ε(x) and g^′(x)≠0 for all x∈X (that is, g has no critical points), as those infinite-dimensional Banach spaces X with separable dual X^∗. We also state sufficient conditions on a separable Banach space so that the function g can be taken to be of class Cp, for p=1,2,…,+∞. In particular, we obtain the optimal order of smoothness of the approximating functions with no critical points on the classical spaces ?p(N) and Lp(Rn). Some important consequences of the above results are (1) the existence of a non-linear Hahn-Banach theorem and the smooth approximation of closed sets, on the classes of spaces considered above; and (2) versions of all these results for a wide class of infinite-dimensional Banach manifolds.     

InSb芯片碎裂与迸溅金点的关系

批量生产中经常发生的锑化铟(InSb)芯片碎裂问题制约着InSb红外焦平面探测器(IRFPAs)成品率的提升.经分析认为:低周期液氮冲击下发生在器件边沿区域的InSb芯片破碎与该区域中迸溅金点的存在有关.为从理论上明晰迸溅金点对InSb芯片局部碎裂的影响,本文建立了包含迸溅金点的InSb IRFPAs结构模型,分析了迸...     

Defects inspection of the solder bumps using self reference technology in active thermography

With the decrease of solder bumps in dimension and pitch, defects inspection of the solder bumps become more difficult. A nondestructive detection system based on the active thermography has been developed for solder bumps inspection. However, heating non-uniformities and emissivity differences may impede the defects recognition. In this paper, we propose a method using a self reference technology based on a source distribution image (SDI) to eliminate the influence of unevenness in emissivity values and heating power distribution. Three thermograms captured right after the heat pulse are averaged to create the SDI. Then the SDI is subtracted from the original thermograms, and we get the thermal contrast images, in which eight points on the edge of each hot spot are selected as the feature points for the corresponding bump. Thermal difference between the feature points and the central point are adopted to quantify the thermal behaviors of the solder bumps, by which the missing bump is distinguished from the reference bumps. The results show that it is effective using the method to eliminate the impacts of emissivity unevenness and heating non-uniformities on defects identification in the active infrared test.     

基于四象限光位置检测器的同步光位置测量系统

为了克服现有双丝型检测器无法进行水平、垂直两个方向同时测量同步光位置的缺点,合肥光源新研制了基于四象限光位置检测器的同步光位置测量系统,并使用对数比处理技术进行后续的数据处理。通过分别对光学成像系统和四象限光位置检测器的标定,最终得到基于四象限光位置检测器的光位置测量系统的性能参数为:水平方向灵敏度0.471 2 mm-1,线性范围为±1.83 mm,垂直方向灵敏度0.635 0 mm-1,线性范围±1.32 mm。与合肥光源现有的光位置测量系统相比,具有较高的性价比。     

合肥光源束流闭轨局部调整和校正

针对特定实验站调整光源点位置的要求,设计了合肥光源储存环束流闭轨局部调整和校正系统,介绍了该系统的工作原理、硬件组成、软件设计及运行结果,设计要求束流闭轨局部调整的最大幅度为1~2 mm,水平方向和垂直方向其余闭轨畸变均方根分别小于50和30 μm。校正系统采用轨道设定法作为束流闭轨局部调整和校正算法,由束流轨道测量系统、校正铁系统和控制系统组成。运行结果显示：水平和垂直方向分别调节2.0和1.5 mm,水平方向和垂直方向其余闭轨畸变均方根分别为45.14和27.62 μm。