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1.
桂质廷(1895~1961),我国著名的地球物理学家.他是建国初期中国科学院地球物理组专门委员,第一个巡测了我国境内地磁常量的中国人.他最先和学生一道在国内进行了高空电离层的常规观测.他所创建的武汉大学游离层实验室,50年来未曾间断电离层的观测研究.本文着重介绍他的生平简历、教学态度、学术成就和爱国主义思想.  相似文献   
2.
The effect of the germanium coverage prior to the epitaxial growth of 5 μm thick 3C-SiC on Si(100) substrates were evaluated with Atomic Force Microscopy and μ-Raman spectroscopy. The 3C-SiC layers were grown by atmospheric pressure chemical vapor deposition via a special procedure leading to layers with compressive instead of tensile stress. The Ge amount was varied from 0 up to 2 ML. The obtained results showed that the residual stress inside the layers is shifted in the compressive direction; the crystalline quality is improved with the Ge introduction but on the account of the surface roughness. These results open the route for the use of Ge-modified Si(100) as a potential substrate in order to improve the heteroepitaxial growth of 3C-SiC on silicon substrates.  相似文献   
3.
We investigated the effect of GaNAs strain-compensating layers (SCLs) on the properties of InAs self-assembled quantum dots (QDs) grown on GaAs (0 0 1) substrates. The GaNAs material can be used as SCL thereby minimizing the net strain, and thus is advantageous for multi-stacking of InAs QDs structures and achieving long wavelength emission. The emission wavelength of InAs QDs can be tuned by changing the nitrogen (N) composition in GaNAs SCLs due to both effects of strain compensation and lowering of potential barrier height. A photoluminescence emission at 77 K was clearly observed for sample with GaN0.024As0.976 SCL. Further, we observed an improvement of optical properties of InAs QDs by replacing the more popular GaAs embedding layers with GaNAs SCLs, which is a result of decreasing non-radiative defects owing to minimizing the total net strain.  相似文献   
4.
In this study, strain rate effects on the compressive mechanical properties of randomly structured carbon nanotube (CNT) networks were examined. For this purpose, three-dimensional atomistic models of CNT networks with covalently-bonded junctions were generated. After that, molecular dynamics (MD) simulations of compressive loading were performed at five different strain rates to investigate the basic deformation characteristic mechanisms of CNT networks and determine the effect of strain rate on stress–strain curves. The simulation results showed that the strain rate of compressive loading increases, so that a higher resistance of specimens to deformation is observed. Furthermore, the local deformation characteristics of CNT segments, which are mainly driven by bending and buckling modes, and their prevalence are strongly affected by the deformation rate. It was also observed that CNT networks have superior features to metal foams such as metal matrix syntactic foams (MMSFs) and porous sintered fiber metals (PSFMs) in terms of energy absorbing capabilities.  相似文献   
5.
The redistribution of the channeled ion flux in the transverse plane has been examined. General formulae describing the flux peaking effect are obtained. Main factors on which the effect depends are investigated. An analysis is made of back-scattering experiments. The study has been made for the axial and planar channeling.  相似文献   
6.
Carrier dynamics of strain-induced InGaAsP/InP quantum dots (QDs) is investigated. In this structure, self-assembled InAs islands on the surface act as stressors and create a lateral confinement potential in the near surface InGaAsP/InP quantum well. Photoluminescence (PL) measurements reveal that decreasing the distance from the QD to the surface significantly diminishes the QD–PL intensity, presumably due to surface states of the InAs islands. Moreover, time-resolved measurements show a faster decay of the QD–PL with decreasing distance. To analyze the carrier dynamics, rate equation model is applied and surface state-related transitions are taken into account. The model is found to agree with measurements, and thus provides a possible explanation for the observed temporal behavior of the carriers.  相似文献   
7.
Nachdem im ersten Teil dieser Arbeit [12] die Geschichte des Periodensystems bis zur atomtheoretischen Deutung dargestellt wurde, behandelt der vorliegende zweite Teil die Auffüllung der Lücken in der Tabelle, die Erweiterung des Systetns durch die Transurane und die Vorhersagen ferner Transurane. Außerdem werden einige interessante Darstellungen des Periodentsystems besprochen.  相似文献   
8.
A novel optical extensometer is developed to estimate the local uniform strain on planar surface accurately. The proposed system consists of a shared large format lens and two image sensors, which acquire pairs of images of two isolated small regions on the object surface simultaneously. Digital image correlation (DIC) algorithm is applied to determine the relative displacement between gauge points designated on recorded pairs of images. Then local strain can be extracted after dividing the relative displacement by the scale distance. Moreover, a special experimental setup called “correction sheet” is used to eliminate the virtual strain induced by out-of-plane motions. Uni-axial tensile experiments are performed to validate the reliability and resolution of the optical extensometer, and the measurement results demonstrate that the resolution of the optical extensometer achieves 2–3 με.  相似文献   
9.
Physicist Lee A. DuBridge became president of the California Institute of Technology in 1946. In this interview he recalls his dealings at Caltech with Linus Pauling; his memories of George W. Beadle, Theodore von Kármán, and J. Robert Oppenheimer; the military Vista Project at Caltech; and the difficulties surrounding the deportation of Hsue-Shen Tsien, Caltech's Goddard Professor of Jet Propulsion.  相似文献   
10.
A Sagnac interferometer with a long-period fiber grating (LPG) inscribed in the polarization-maintaining fiber (PMF) is proposed and experimentally demonstrated for simultaneous measurement of strain and temperature. Due to the different responses of the LPG and the Sagnac interferometer to strain and temperature, simultaneous measurement can be achieved by monitoring the wavelength shifts and the intensity changes of a resonance dip of the sensor setup. The experimental results show that the achieved sensitivities to strain and temperature are 6.4 × 10− 3 dB/με and 0.65 nm/°C, respectively.  相似文献   
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