Electronic molecule-like spectrum of quantum wells in crossed fields

We show that an electron confined to a single finite parabolic quantum well in crossed electric and magnetic fields can behave as a double quantum well system. The magnetic field is parallel to the heterostructure layers and the electric field is perpendicular to those. For a suitable choice of both fields and quantum well width, the electron can be confined to a double quantum well effective potential that is very similar to the electronic potential model for diatomic molecules. The double quantum well spectrum is calculated using a numerical algorithm based on semiclassical methods. A physical interpretation of this quantum system is given based on the analogy to the electrons bound to diatomic molecules.     

On disjoint configurations in infinite graphs

For a graph A and a positive integer n, let nA denote the union of n disjoint copies of A; similarly, the union of ?₀ disjoint copies of A is referred to as ?₀A. It is shown that there exist (connected) graphs A and G such that nA is a minor of G for all n??, but ?₀A is not a minor of G. This supplements previous examples showing that analogous statements are true if, instead of minors, isomorphic embeddings or topological minors are considered. The construction of A and G is based on the fact that there exist (infinite) graphs G₁, G₂,… such that G_i is not a minor of G_j for all i ≠ j. In contrast to previous examples concerning isomorphic embeddings and topological minors, the graphs A and G presented here are not locally finite. The following conjecture is suggested: for each locally finite connected graph A and each graph G, if nA is a minor of G for all n ? ?, then ?₀A is a minor of G, too. If true, this would be a far‐reaching generalization of a classical result of R. Halin on families of disjoint one‐way infinite paths in graphs. © 2002 Wiley Periodicals, Inc. J Graph Theory 39: 222–229, 2002; DOI 10.1002/jgt.10016     

Structure theorem for tournaments omitting N5

A finite tournament T is tight if the class of finite tournaments omitting T is well‐quasi‐ordered. We show here that a certain tournament N₅ on five vertices is tight. This is one of the main steps in an exact classification of the tight tournaments, as explained in [10]; the third and final step is carried out in [11]. The proof involves an encoding of the indecomposable tournaments omitting N₅ by a finite alphabet, followed by an application of Kruskal's Tree Theorem. This problem arises in model theory and in computational complexity in a more general form, which remains open: the problem is to give an effective criterion for a finite set {T₁,…,T_k} of finite tournaments to be tight in the sense that the class of all finite tournaments omitting each of T₁,…,T_k is well‐quasi‐ordered. © 2003 Wiley Periodicals, Inc. J Graph Theory 42: 165–192, 2003     

Quantum Information Entropies on Hyperbolic Single Potential Wells

In this work, we study the quantum information entropies for two different types of hyperbolic single potential wells. We first study the behaviors of the moving particle subject to two different hyperbolic potential wells through focusing on their wave functions. The shapes of these hyperbolic potentials are similar, but we notice that their momentum entropy densities change along with the width of each potential and the magnitude of position entropy density decreases when the momentum entropy magnitude increases. On the other hand, we illustrate the behaviors of their position and momentum entropy densities. Finally, we show the variation of position and momentum entropies Sx and Sp with the change of the potential well depth u and verify that their sum still satisfies the BBM inequality relation.     

Donor impurity states in zinc-blende GaN/AlGaN quantum well: Quantum confinement and laser-dressed effects

Within the framework of effective-mass approximation, the effects of a laser field on the ground-state donor binding energy in zinc-blende (ZB) GaN/AlGaN quantum well (QW) have been investigated variationally. Numerical results show that the donor binding energy is highly dependent on QW structure parameters and Al composition in ZB GaN/AlGaN QW. The laser field effects are more noticeable on the donor binding energy of an impurity localized inside the QW with small well width and low Al composition. However, for the impurity located in the vicinity of the well edge of the QW, the donor binding energy is insensible to the variation of Al composition, well width and laser field intensity in ZB GaN/AlGaN QW. In particular, the competition effects between laser field and quantum confinement on impurity states have also been investigated in this paper.     

Energy levels in doped SiGe quantum well studied by admittance spectroscopy

SiGe/Si quantum wells (QWs) with different Boron doping concentrations were grown by molecular beam epitaxy (MBE) on p-type Si(1 0 0) substrate. The activation energies of the heavily holes in ground states of QWs, which correspond to the energy differences between the heavy hole ground states and Si valence band, were measured by admittance spectroscopy. It is found that the activation energy in a heavily doped QW increases with doping concentration, which can be understood by the band alignment changes due to the doping in the QWs. Also, it is found that the activation energy in a QW with a doping concentration of 2 × 10²⁰ cm⁻³ becomes larger after annealing at a temperature of 685 °C, which is attributed to more Boron atoms activation in the QW by annealing.     

正切平方势阱中线性与非线性光学折射率变化的研究

利用正切平方势把电子的Schrodinger方程化为了超几何方程，并用超几何函数严格求解了电子的本征值和本征函数利用量子力学中的密度矩阵算符理论导出了正切平方势阱中的线性与三阶非线性光学折射率的解析表达式计算了该系统中的线性与非线性光学折射率变化的大小，讨论了影响折射率变化因素文章以典型的GaAs/AlGaAs势阱为例作了数值计算,数值计算结果表明，势阱的形状和入射光强对光学折射率的变化有着重要的影响.     

矩形截面多量子阱脊形波导模式特性

本文根据多量子阱双折射率的性质,运用有效折射率法分析了矩形截面多量子阱脊形波导E_mn^x模和模E_mn^y的模式特性。     

Optimization of facet coating for highly strained InGaAs quantum well lasers operating at 1200 nm

The optical output power of a laser diode can be enhanced by anti-reflection (AR) and high-reflection (HR) facet coatings, respectively, at the front and back facet. AR and HR coatings also serve the purpose of protection and passivation of laser diode facets. In this work, we have designed and optimized a single layer λ/4 thick Al₂O₃ film for the AR coating and a stack of λ/4 thick Al₂O₃/λ/4 thick Si bi-layers for the HR coating for highly strained InGaAs quantum-well edge emitting broad area (BA) laser diodes. Effect of the front and back facet reflectivities on output power of the laser diodes has been studied. The light output versus injected current (L–I characteristics) measurements were carried out on selected devices before and after the facet coatings. We have also carried out the numerical simulation and analysis of L–I characteristics for this particular diode structure. The experimental results have been compared and verified with the numerical simulation.     

铁磁金属量子阱态的共振隧穿

非铁磁金属层中的量子阱态在磁输运过程中的重要性已被广泛认识．铁磁金属层中自旋极化的量子阱态以前并没有详尽的理论研究；实验上也没有清晰地观测到自旋极化量子阱态的隧穿．文章介绍了最近由卢仲毅、张晓光和Pantelides预言的Fe／MgO／FeO／Fe／Cr和其他铁磁量子阱隧道结中的共振隧穿，并解释铁、钴、铬的△1能带的对称性在这种共振隧穿中的作用．