The steady state growth rate of a recrystallization front in regions of heterogeneous dislocation density

The paper investigates whether a change from a homogeneous to an inhomogeneous dislocation distribution, assumed to be caused by a slight additional deformation, can lead to an increase of the recrystallization temperature of a deformed metal. In this case, the higher temperature would indicate a more stable deformation structure despite the increase of stored energy. The recrystallization temperature is related to the growth rate. Hence, the steady state velocity of a recrystallization front moving either parallel or vertically to the stripes of a simplified two-dimensional heterogeneous dislocation distribution of parallel sections of higher and lower dislocation densities is calculated. The results show that if a front growths through the high and low density sections in series an overall slower rate despite higher mean dislocation density is, indeed, possible. However, growing in the parallel arrangement always leads to a higher growth rate compared with the homogeneous case of slightly less stored energy. Since in a real structure the faster growth is likely to succeed, the recrystallization temperature observed will be lowered with additional deformation in accordance with experimental experience.     

On the ion exchange defects in aluminosilicate lattices

Summary Samples of synthetic leucite and boron-substituted leucite are investigated by infrared spectroscopy and spectrally resolved thermoluminescence. Evidence is obtained in favour of the assumption that point defects in aluminosilicate lattices are originated by exchanges of Si⁺⁴ and Al⁺³ ions lying in different cells.     

Characterisation of oxygen defects in calciumdifluoride

We study the aggregation of oxygen dipoles well dispersed in a CaF₂ crystal upon annealing at temperatures ranging from 370 to 420 K. The concentration of oxygen dipoles is monitored by measuring the intensity of the ionic thermocurrent peak as well as by absorption and luminescence spectroscopies. Results from three methods agree within experimental error and yield an activation energy of (1.2±0.1) eV for the diffusion of isolated oxygen centres in the crystal.     

Cyclic Voltammograms of Ferrocene on Multi‐Walled Carbon Nanotubes (MWCNTs)‐Modified Edge Plane Pyrolytic Graphite (EPPG) Electrode in Room Temperature Ionic Liquids (RTILs) of 1‐Ethyl‐3‐Methylimidazolium Tetrafluoroborate (EMIBF4)

In this work, the electrochemical behavior of ferrocene (Fc) was investigated by cyclic voltammetry (CV) in room temperature ionic liquids (RTILs) of 1‐ethyl‐3‐methylimidazolium tetrafluoroborate (EMIBF₄) on glass carbon (GC), edge plane pyrolytic graphite (EPPG) and multi‐walled carbon nanotube (MWCNTs)‐modified EPPG electrodes, respectively. The results demonstrated that on GC electrode, pairs of well‐defined reversible peaks were observed, while for the electrode of EPPG, the peak potential separation (ΔE_p) is obviously larger than the theoretical value of 59 mV, hinting that the electrode of EPPG is distinguished from the commonly used electrode, consistent with the previous proposition that EPPG has many “defects”. To obtain an improved electrochemical response, multi‐walled carbon nanotubes (MWCNTs) were modified on the electrode of EPPG; the increased peak current and promoted peak potential separation not only proved the existence of “defects” in MWCNTs, but also supported that “creating active points” on an electrode is the main contribution of MWCNTs. Initiating the electrochemical research of Fc on the MWCNTs‐modified EPPG electrode in RTILs and verifying the presence of “defects” on both EPPG and MWCNTs using cyclic voltammograms (CVs) of Fc obtained in RTILs of EMIBF₄, is the main contribution of this preliminary work.     

Properties of Ce–Zr–La–O nano-system with ruthenium modified surface

Structural peculiarities of Ce–Zr–La–O and Ce–Zr–La–O/Ru samples in mean of catalytic properties are compared. The samples (Ce:Zr = 1:1, La = 10÷30 mol.%, Ru = 1.5 wt.%) were obtained by sol–gel method (X-samples) and co-precipitation (P-samples). It is shown that Ce_0.45Zr_0.45La_0.1O_2−δ/Ru X-samples are characterized by high thermal stability and the highest catalytic activity in partial methane oxidation reaction. According to XRD, BET, FTIR, EPR and XPS data it is concluded that the difference in the samples catalytic activity is caused by various disposition of Ru-containing phase on the support surface. The distinction in the dimension of Ru-containing particles (3D or 2D) is conditioned by structural peculiarities of Ce_0.45Zr_0.45La_0.1O_2−δ and Ce_0.35Zr_0.35La_0.3O_2−δ P- and X-samples.     

The oxidation characteristics of nitrogen-implanted silicon

The trapping of 5 keV deuterium in ～ 165 and ～ 4000 nm thick BeO films grown by thermal oxidation on Be substrates was investigated at different temperatures using the D(³He,H)⁴He nuclear reaction. The ratio of implanted D to BeO molecules obtained at saturation is 0.24 to 0.34. The D migrates from its end of range location and distributes itself uniformly in the BeO film. With increasing implant temperature the BeO layer flakes from the Be substrate. The distribution of D in BeO films at high concentrations is not consistent with diffusivity measurements at low concentrations of T in BeO.     

Probing defect species on real surfaces from the analysis of the spectral profile of admolecules

The analysis of changes in the vibrational spectrum of infrared active molecules adsorbed on a ionic surface containing point or extended defects can be an efficient method to determine the nature and density of surface defects. We study the infrared response of ammonia molecules deposited on a ionic surface of MgO containing charge vacancies and dipolar defects in various concentrations and distributions and show significant changes assigned to the defects signature. A Monte Carlo approach is used to randomly deposit the probe molecules on the surface displaying random or regularly arranged defects at low temperature.     

Kinetic study of isothermal crystallization process of Gd2Ti2O7 precursor's powder prepared through the Pechini synthetic approach

Crystallization process of Gd₂Ti₂O₇ precursor's powder prepared by Pechini-type polymerized complex route has been studied under isothermal experimental conditions in an air atmosphere. It was found that the crystallization proceeds through two-parameter Šesták–Berggren (SB) autocatalytic model, in the operating temperature range of 550 °C≤T≤750 °C. Based on the behavior of SB parameters (M, N), it was found that in the lower operating temperature range, the crystallites with relatively low compactness exist, which probably disclosed low dimensionality of crystal growth from numerous nucleation sites, where the amorphous solid is produced. In the higher operating temperature region (above 750 °C), it was established that a morphological well-defined and high-dimensional particles of the formed pyrochlore phase can be expected. It was found that at T=850 °C, there is a change in the rate-determining reaction step, from autocatalytic into the contracting volume mechanism.     

Sunlight assisted photodegradation by tin oxide quantum dots

Rutile phase of SnO₂ quantum dots of average size of 2.5 nm were synthesized at a growth temperature of 70 °C and characterized with XRD, TEM, FTIR and Raman analysis. The effective strain within the lattice of SnO₂ quantum dots was calculated by Williamson–Hall method. The broad peaks in XRD as well as Raman spectra and the presence of Raman bands at 569 and 432 cm⁻¹ are due to lower crystallinity of nanoparticles. The optical band gap of SnO₂ quantum dots was increased to 3.75 eV attributed to the quantum size effect. SnO₂ quantum dots were annealed in air atmosphere and the crystallite size of the particles increased with annealing temperature. Sunlight assisted photodegration property of SnO₂ quantum dots was investigated with vanillin as a model system and it shows the photodegradation efficiency of 87%. The photoluminescence and photodegradation efficiency of nanocrystallite SnO₂ decreases with increase of crystallite size contributed to the reduction in population of defects and surface area.     

Swift heavy ion induced capacitance and dielectric properties of Ni/n-GaAs Schottky diode

The in-situ capacitance and dielectric properties of 25 MeV C⁴⁺ ion irradiated Ni/n-GaAs Schottky barrier diode (SBD) were studied at 100 kHz in the fluence range 5 × 10¹⁰ – 5 × 10¹³ ions/cm². The investigation shows reduction in capacitance and charge density with increase in ion fluence. Consequent changes were observed in other related parameters like conductance, dielectric constant, dielectric loss, loss tangent and electrical modulus. The results were interpreted in terms of generation of swift heavy ion induced acceptor trap states by electronic energy loss mechanism. Besides, the switch over characteristics of depletion to inversion regions in the CV plot reveals minority carrier recombination centers also. The dispersion and relaxation peaks observed in bias dependent dielectric plots were ascribed to the polarization and relaxation mechanism due to the interfacial trap states. The traps and recombination centers were found to alter the barrier characteristics of the fabricated SBD depending upon the ion fluence.