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Qingping Dou Haitao Ma Gang Jia Zhanguo Chen Kun Cao Tiechen Zhang 《Optics & Laser Technology》2007,39(3):647-651
The cubic boron nitride (cBN) is a kind of artificial electro-optic (EO) crystal, and we have not found any relative reports so far. Because the artificial synthetic cBN wafers are very small and hard, the wafers cannot be cut into rectangular slabs. The polarizer-sample-λ/4 retardation plate (compensator)-analyzer (PSCA) transverse EO modulator has to be adjusted to the minute irregular octahedron of cBN wafers. When the applied voltage is along [1 1 1] direction of the wafer, due to refraction, the angle between the incident beam direction and the (1 1 1) plane (top or bottom plane) of the wafer should be 25.4°, and the angle between the polarization direction of the polarizer and the plane of incidence should be 50.8° by calculation, respectively. The half-wave voltage of the cBN sample was obtained for the first time, by means of detection of the output optic signals from the modulator with and without an applied electric field on the sample, respectively. Furthermore, the linear EO coefficient was obtained, . The analysis of the experimental resulting error was carried out. 相似文献
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Abstract Transformation kinetics from hBN to cBN has been studied at 6 GPa with changing reaction temperature and content of catalyst mixed with hBN powder. At lower catalyst content (3–10 wt %), rate of transformation was extraordinary rapid between 1300 and 1350 C. At higher catalyst content (30–50 wt %), rate of transformation was decreased. Normal nucleation kinetics was observed at about 1500 C. The rapid transformation temperature region correlates characteristic behavior of the sintering process. 相似文献
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An implantation terminal for the preparation of p-n junction particle detectors was set up on a multipurpose isotope separator. To provide for homogeneous implantation. the ion beam is swept in the horizontal direction and the samples are moved vertically. In order to be able to implant samples with different geometry two different sample moving systems can be mounted in the implantation chamber. A rotating drum is used for round wafers. a rotating disc in connection with a rotating diaphragm is provided for very elongated samples. Implanted resistive layers on a wafer have resistances which differ by less than ±1 %. 相似文献
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