Biosensors based on enzyme field-effect transistors for determination of some substrates and inhibitors

This paper is a review of the authors' publications concerning the development of biosensors based on enzyme field-effect transistors (ENFETs) for direct substrates or inhibitors analysis. Such biosensors were designed by using immobilised enzymes and ion-selective field-effect transistors (ISFETs). Highly specific, sensitive, simple, fast and cheap determination of different substances renders them as promising tools in medicine, biotechnology, environmental control, agriculture and the food industry.The biosensors based on ENFETs and direct enzyme analysis for determination of concentrations of different substrates (glucose, urea, penicillin, formaldehyde, creatinine, etc.) have been developed and their laboratory prototypes were fabricated. Improvement of the analytical characteristics of such biosensors may be achieved by using a differential mode of measurement, working solutions with different buffer concentrations and specific agents, negatively or positively charged additional membranes, or genetically modified enzymes. These approaches allow one to decrease the effect of the buffer capacity influence on the sensor response in an aim to increase the sensitivity of the biosensors and to extend their dynamic ranges.Biosensors for the determination of concentrations of different toxic substances (organophosphorous pesticides, heavy metal ions, hypochlorite, glycoalkaloids, etc.) were designed on the basis of reversible and/or irreversible enzyme inhibition effect(s). The conception of an enzymatic multibiosensor for the determination of different toxic substances based on the enzyme inhibition effect is also described.We will discuss the respective advantages and disadvantages of biosensors based on the ENFETs developed and also demonstrate their practical application.     

MICROEMULSION SYSTEMS WITH A NONIONIC COSURFACTANT

The conditions to obtain W/0 microemulsions using ionic surfactants and a nonionic cosurfactant, a polyoxyethylene alkyl ether, were investigated. The length of the polyoxyethylene chain was critical to obtain the typical water solubilization maximum

The variation of the W/0 microemulsion region with hydrocarbon content was different from that of the usual type of microemulsions having a medium chain length alcohol as cosurfactant. In the present systems the W/0 microemulsion region was not a direct continuation of the inverse micellar area at zero content of hydrocarbon. Addition of hydrocarbon was necessary for the formation of inverse micelles

The microemulsion regions were sensitive to the kind of hydrocarbon used; a sign of the importance of the nonionic surfactant for the stability of this kind of microemulsions.     

Ti基ZnO纳米棒阵列的制备及其光催化性能研究

采用两电极体系中恒电流电沉积在Ti基底上制得较均一的ZnO纳米棒阵列,利用SEM和XRD观察表征样品,研究Zn(NO₃)₂浓度及电流密度对ZnO纳米棒阵列微观形貌的影响. 以甲基橙为目标降解物,考察该电极光催化性能. 结果表明,Zn(NO₃)₂浓度和电流密度对纳米棒阵列的形貌有显著影响;与ITO玻璃等其他基底相比,在Ti基底上也可沉积较好均一取向的ZnO纳米棒阵列;紫外灯照射下,ZnO/Ti电极对甲基橙（10 mg·L^-1）模拟印染废水降解2.5 h,降解率达到83.3%,光催化活性较佳;无光照时ZnO纳米棒的降解率仅7%.     

Liquid phase epitaxial growth and optical property of flower-like ZnO nanosheets on Zinc foil

Large scale flower-like ZnO nanosheets have been synthesized on Zinc foil by a simple hydrothermal method. Their morphology and microstructures were characterized and analyzed by X-ray spectroscopy (XRD), field emission scanning electron microscopy (FE-SEM) and high-resolution transmission electron microscopy (HRTEM). The as-synthesized flower-like nanosheets are hexagonal phase single crystal with 200-300 nm in width, 50 nm in thickness. The growth process follows the liquid phase epitaxial growth mechanism. In this approach, the ZnO buffer is used as substrate for the growth of flower-like ZnO nanosheets. The growth direction of the nanosheets is the preferential [0 0 0 1] growth direction of ZnO. The photoluminescence spectrum of the sample exhibits only a sharp and strong UV emission centered at 386 nm, which indicates that the flower-like ZnO nanosheets on Zn foil are of good optical property.     

Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE

Void formation at the interface between thick AlN layers and (0 0 0 1) sapphire substrates was investigated to form a predefined separation point of the thick AlN layers for the preparation of freestanding AlN substrates by hydride vapor phase epitaxy (HVPE). By heating 50–200 nm thick intermediate AlN layers above 1400 °C in a gas flow containing H₂ and NH₃, voids were formed beneath the AlN layers by the decomposition reaction of sapphire with hydrogen diffusing to the interface. The volume of the sapphire decomposed at the interface increased as the temperature and time of the heat treatment was increased and as the thickness of the AlN layer decreased. Thick AlN layers subsequently grown at 1450 °C after the formation of voids beneath the intermediate AlN layer with a thickness of 100 nm or above self-separated from the sapphire substrates during post-growth cooling with the aid of voids. The 79 μm thick freestanding AlN substrate obtained using a 200 nm thick intermediate AlN layer had a flat surface with no pits, high optical transparency at wavelengths above 208.1 nm, and a dislocation density of 1.5×10⁸ cm⁻².     

Hydride vapor phase epitaxy of GaN boules using high growth rates

The boule-like growth of GaN in a vertical AIXTRON HVPE reactor was studied. Extrinsic factors like properties of the starting substrate and fundamental growth parameters especially the vapor gas composition at the surface have crucial impact on the formation of inverse pyramidal defects. The partial pressure of GaCl strongly affects defect formation, in-plane strain, and crystalline quality. Optimized growth conditions resulted in growth rates of 300–500 μm/h. GaN layers with thicknesses of 2.6 and of 5.8 mm were grown at rates above 300 μm/h. The threading dislocation density reduces with an inverse proportionality to the GaN layer thickness. Thus, it is demonstrated that growth rates above 300 μm/h are promising for GaN boule growth.     

Substrates for the at-line coupling of capillary electrophoresis and surface-enhanced Raman spectroscopy

In this preliminary study, we evaluated four different types of substrate for the at-line coupling of capillary electrophoresis and surface-enhanced (resonance) Raman spectroscopy, CE-SER(R)S, with emphasis on spectral repeatability. We tested Sub1: etched silver foil, Sub2: a vapour-deposited silver film, Sub3: a silver oxalate-precoated silica TLC plate and Sub4: a silica TLC plate on which colloid and poly(l-lysine) were manually added to the analyte spots, used earlier in at-line CE-SE(R)RS. All substrates were first tested by manual spotting using trans-1,2-bis(4-pyridyl)ethylene (BPE) as a model compound for SERS and crystal violet (CV) as a model compound for SE(R)RS. The spectral features of the SE(R)RS spectra of BPE and CV showed a most satisfactory repeatability on all substrates. As expected, the signal intensities varied considerably between runs; this implies that quantification in at-line CE-SE(R)RS should rather be done by means of an on-line absorbance detector. In addition, the suitability of Sub1, Sub2 and Sub4 as deposition substrates after CE was explored using two cationic dyes: CV and basic fuchsin (BF). Good-quality SERRS spectra could be recorded on all three substrates. Although Sub1 and Sub2 have a poor water-sorptivity, they were found to be good substrates for at-line CE-SERRS. They do not require any post-deposition addition of silver colloid and could therefore become attractive alternatives for Sub4.     

Effect of frit size on sintering, crystallization and electrical properties of wollastonite glass-ceramics

Wollastonite glass-ceramics were prepared through pressureless sintering. The sinterability of the prepared samples of the glassy powder in the system (SiO₂-CaO-Na₂O-Fe₂O₃-WO₃) was investigated in the temperature range 720-900 °C and soaking time of 180 min. The influence of the increase in the glass powder particle size on the sinterability and dielectric properties of the glass-ceramic samples was studied.The sintered specimens were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD) methods. XRD analysis revealed that wollastonite was the main crystalline phase in the sintered glass-ceramics. Dielectric properties such as dielectric constant and dielectric loss were measured via a network analyzer at 10 GHz.It was observed that the increase of the glassy powder particle size improved the sinterability and dielectric properties of the glass-ceramic specimens. Wollastonite glass-ceramics with 16 μm particle size had maximum constant and minimum loss (ε_r = 10.10 and tan δ = 0.005) compared with the other glass-ceramics.     

Semiconductor SERS on Colourful Substrates with Fabry-Pérot Cavities

Non-metallic materials have emerged as a new family of active substrates for surface-enhanced Raman scattering (SERS), with unique advantages over their metal counterparts. However, owing to their inefficient interaction with the incident wavelength, the Raman enhancement achieved with non-metallic materials is considerably lower with respect to the metallic ones. Herein, we propose colourful semiconductor-based SERS substrates for the first time by utilizing a Fabry-Pérot cavity, which realize a large freedom in manipulating light. Owing to the delicate adjustment of the absorption in terms of both frequency and intensity, resonant absorption can be achieved with a variety of non-metal SERS substrates, with the sensitivity further enhanced by ≈100 times. As a typical example, by introducing a Fabry-Pérot-type substrate fabricated with SiO₂/Si, a rather low detection limit of 10⁻¹⁶ M for the SARS-CoV-2S protein is achieved on SnS₂. This study provides a realistic strategy for increasing SERS sensitivity when semiconductors are employed as SERS substrates.