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1.
CoPt/Ag and [C/CoPt]n/Ag thin films have been prepared onto the glass substrates by magnetron sputtering. We investigated the evolution of texture and magnetic properties of CoPt/Ag and [C/CoPt]n/Ag films. The results show that C-doping plays an important role in improving (0 0 1) texture, improving the order parameter S, reducing the intergrain interactions, and making the magnetization reversal mechanism more close to Stoner-Wolfarth rotational mechanism. The growth mechanism of (0 0 1) texture also seems to be related strongly to the films thickness. Our results show that the highly (0 0 1)-oriented films with ordered fct phase have a significant potential for the perpendicular media of extremely high-density recording.  相似文献   
2.
In this investigation, the crystalline structure of a nanometric CoSi2 layer, formed in heat treated Co/WxTa(1−x)/Si(1 0 0) systems, has been studied by XRD analysis. Careful measurements of the diffraction intensities revealed that temporary formation of a metastable diamond cubic structure of CoSi2 phase, rather than its usual CaF2 structure, was occurred. It has been shown that formation of this metastable structure depends on the kind of the applied interlayer in addition to the annealing temperature. Among the studied systems with x = 0, 0.25, 0.5, 0.75 and 1, the second and the last systems resulted in growing a (1 0 0) single-texture CoSi2 layer with the preferred usual CaF2 structure, a strained lattice parameter, and the best thermal stability (900-1000 °C).  相似文献   
3.
We discuss the strength of the trilinear Higgs boson coupling in technicolor (or composite) models in a model independent way. The coupling is determined as a function of a very general ansatz for the technicolor self-energy, and turns out to be equal or smaller than the one of the Standard Model Higgs boson depending on the dynamics of the theory.  相似文献   
4.
We report a method to grow thin strain-released InAs layer on GaAs (1 0 0) substrates by molecular beam epitaxy. We have shown that by controlling the growth parameters, a thin 2D InAs layer can be grown during initial stages, which eventually serves as a buffer layer to trap dislocations and epitaxial regrowth of InAs on this buffer results in high crystal quality. The size dependence of the InAs islands formed during initial stages with growth time has been studied by atomic force microscopy. With continuous short-time epitaxial growth during various stages, the InAs growth mode transfers from 3D to 2D. The introduction of dislocations into InAs epitaxial islands and their behavior during initial growth stage has been theoretically studied. The theoretical results are in remarkable agreement with the experimental results and shows that once the film is formed, the film strain is totally relaxed. The 200 nm thick InAs epilayer grown on this buffer shows a narrow X-ray diffraction peak. Such InAs strain-released buffer layer would be useful for regrowth of high In content based materials on top of it for electronics and optoelectronics device applications.  相似文献   
5.
GaMnN and Be-codoped GaMnN were grown via molecular beam epitaxy using a single GaN precursor and their structural and magnetic properties were examined. X-ray diffraction and superconducting quantum interference device (SQUID) measurements revealed that the grown layers are homogeneous without precipitates. The saturation magnetization of GaMnN has increased from ∼4 to ∼16 emu/cm3 via codoping of Be. The d–d exchange interaction between Mn atoms was discussed for the ferromagnetism of GaMnN.  相似文献   
6.
Combining low-temperature electron (ED) and synchrotron powder diffraction (SPD) techniques, we have precisely determined the phase-separated crystal structure of Pr0.5Ca0.5Mn0.97Ga0.03O3. We demonstrate that the phase separation is associated with the onset of charge/orbital ordering at ∼230 K and that two ordered phases coexist at low temperature. In order to account for the significant anisotropic linewidth broadening observed in the SPD patterns, we had to include a specific strain model in the refinements. One of the phases, the most severely strained, is suggested to result from an imperfect charge ordering.  相似文献   
7.
The ternary germanides CeNiGe and CeCuGe absorb hydrogen in the temperature range 393-473 K. X-ray powder diffraction and transmission electron microscopy show that the hydride CeNiGeH1.6(1) adopts the hexagonal ZrBeSi-type whereas CeCuGeH1.0(1) crystallizes in a superstructure of this type. Magnetization, electrical resistivity and thermopower measurements reveal that CeNiGeH1.6(1) is an intermediate valence compound having a Kondo temperature ≅220(10) K smaller than that observed ≅600(20) K for CeNiGe. On the contrary, a transition from ferromagnetism to non-magnetic ordering above 1.8 K is evidenced during the hydrogenation of CeCuGe.  相似文献   
8.
The crystal structure of the quasi-one-dimensional oxide PbNi1.88Mg0.12V2O8 has been studied by Rietveld analysis of combined high-resolution neutron and X-ray powder diffraction data at 300 K and at low temperatures. The (Ni/Mg)O6 octahedral units share a common edge and form spiral chains along the c-axis of the tetragonal unit cell, without deviating the I41cd (Z=8) symmetry upon cooling. DC magnetic susceptibility measurements show that the system undergoes a magnetic phase transition below TN≅3.4 K. Rietveld analysis of the medium resolution neutron powder diffraction data confirms that impurity-induced antiferromagnetic order (with propagation vector, ) takes over from the Haldane ground state of the parent compound. The power-law [β=0.31(3)] temperature evolution of the strongest magnetic Bragg peak intensity indicates three-dimensional Ising-type magnetic interactions, while the reduced magnitude of the Ni2+ moment [〈μ〉=0.98(3) μB] suggests important zero-point spin fluctuations. Structural considerations are consistent with small changes in the interatomic distances around the bridging tetrahedral VO4 entities separating the chains. However, no bulk structural phase transition concurrent to the Néel ordering is found. We show that the modification of intra- and inter-chain Ni-Ni distances upon cooling promotes the magnetic coupling of the end-of-chain liberated S=1/2 spins and leads to antiferromagnetic ordering.  相似文献   
9.
It is shown that transient magnetic fields in Gd-host for20Ne ions at a mean velocity of 12.5v0(v0=c/137), considerably beyond the Bohr velocity of 1s electrons of Ne ions (v1s=10v0), are dominated by the Fermi contact field of these electrons. The first excited 2+-state of2Ne was used as probe. The derived value for the mean degree of polarization p1s=0.32(13), is surprisingly large, though still consistent with values obtained at lower velocities. Present calculations of spin exchange cross sections severely underestimate the observed polarization at this high velocity.The authors are grateful to the operating staff of the UNILAC for providing excellent beam conditions. They also thank Dr. P. Maier-Komor for preparing the delicate targets. Support by the BMFT is acknowledged.  相似文献   
10.
Polycrystalline zinc nitride films are deposited on Coming 7059 glass substrates by pulsed filtered cathodic vacuum arc deposition (PFCVAD). The crystallographic structure is studied by means of x-ray diffraction. These measurements show that all the films are crystallized in the cubic structure, in a preferred orientation along the (332) and (631) directions. Weak XRD signal shows small crystallites distributed in an amorphous tissue. A small improvement of crystallinity is observed with annealing. Optical parameters such as absorption, energy band gap, Urbach tail, extinction coefficients have been determined. The Urbach tail energy is decreased with annealing at 500℃ for one hour. Energy band gap values are found to be increased by annealing.  相似文献   
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