Threshold electrical switching in As45Te55-xInx and As50Te50-xInx glasses

The electrical switching behaviour of As₄₅Te_55-xIn_x (5≤x≤15) and As₅₀Te_50-xIn_x (2.5≤x≤11.5) has been studied over a wide range of compositions. These glasses are found to exhibit threshold switching. The composition dependence of switching voltage (V_t) has been found to exhibit a change in slope and a local minimum at compositions x=10 and 12.5 for As₄₅Te_55-xIn_x and x=7.5 and 10.8 for As₅₀Te_50-xIn_x, respectively. The slope change in V_t verses x and the local minimum have been identified using two network topological effects, namely the rigidity percolation threshold and the chemical threshold. Received: 23 August 2001 / Accepted: 27 August 2001 / Published online: 11 February 2002     

Anomalous electric-field effect and glassy behaviour in granular aluminium thin films: electron glass?

We present a study of non-equilibrium phenomena observed in the electrical conductance of insulating granular aluminium thin films. An anomalous field effect and its slow relaxation are studied in some detail. The phenomenology is very similar to the one already observed in indium oxide. The origin of the phenomena is discussed. In granular systems, the present experiments can naturally be interpreted along two different lines. One relies on a slow polarisation in the dielectric surrounding the metallic islands. The other one relies on a purely electronic mechanism: the formation of an electron Coulomb glass in the granular metal. More selective experiments and/or quantitative predictions about the Coulomb glass properties are still needed to definitely distinguish between the two scenarios.     

Mechanisms of ion-beam-enhanced diffusion in amorphous silicon

We have investigated ion-beam-enhanced diffusion of Au in undoped and B doped amorphous Si. The diffusion coefficients depend linearly on ion flux and exibit an Arrhenius-like temperature dependence with an activation energy of 0.37 eV in the temperature range 200–350° C. Moreover the diffusivity is enhanced by a factor of 5 by B-doping at a concentration of 1×10²⁰ atoms/cm³. A similar enhancement is observed in thermal diffusion of Au which has an activation energy of 1.5 eV. On the basis of these results a model for the ion-beam-enhanced diffusion of Au is proposed where the high density of defects present in amorphous Si act as traps for the fast moving interstitial Au atoms. The effectiveness of this trapping process can be changed by the high concentration of mobile defects generated by the beam and also by a change in the charge state of the traps induced by the presence of B.     

On the size distribution of Poisson Voronoi cells

Poisson Voronoi diagrams are useful for modeling and describing various natural patterns and for generating random lattices. Although this particular space tessellation is intensively studied by mathematicians, in two- and three-dimensional (3D) spaces there is no exact result known for the size distribution of Voronoi cells. Motivated by the simple form of the distribution function in the 1D case, a simple and compact analytical formula is proposed for approximating the Voronoi cell's size-distribution function in the practically important 2D and 3D cases as well. Denoting the dimensionality of the space by d (d=1,2,3) the compact form is suggested for the normalized cell-size distribution function. By using large-scale computer simulations the viability of the proposed distribution function is studied and critically discussed.     

A random telegraph signal of Mittag-Leffler type

A general method is presented to explicitly compute autocovariance functions for non-Poisson dichotomous noise based on renewal theory. The method is specialized to a random telegraph signal of Mittag-Leffler type. Analytical predictions are compared to Monte Carlo simulations. Non-Poisson dichotomous noise is non-stationary and standard spectral methods fail to describe it properly as they assume stationarity.     

Electrical switching studies on As<Subscript>40</Subscript>Te<Subscript>60-x</Subscript>Se<Subscript>x</Subscript> and As<Subscript>35</Subscript>Te<Subscript>65-x</Subscript>Se<Subscript>x</Subscript> glasses

The I–V characteristics of bulk As₄₀Te_60-xSe_x and As₃₅Te_65-xSe_x glasses have been studied with a current sweep of 0–18 mA-0, over a wide range of compositions (4≤x≤22). All the glasses studied showed a threshold electrical switching behaviour. The number of switching cycles withstood by the samples has been found to depend on the ON-state current. It is seen that the switching voltages increase with increase in selenium content. Further, the switching voltages are found to be almost independent of the thickness of the sample (d), in the range 0.18–0.3 mm. Also, the switching voltages and the number of switching cycles withstood by the samples are found to decrease with temperature. Received: 6 November 2002 / Accepted: 8 November 2002 / Published online: 29 January 2003 RID="*" ID="*"Corresponding author. Fax: +91-80/360-0135, E-mail: sasokan@isu.iisc.ernet.in     

Monte Carlo simulations of electron dynamics in N2/CO2 mixtures

Motivated by experimental investigations of electrical discharges in N₂/CO₂/H₂O, Monte Carlo (MC) electron dynamics simulations in atmospheric N₂/CO₂ mixtures were performed. The goal was to obtain electron energy distribution functions (EEDFs), mean free path, drift velocity, collision frequency and mean energy of electrons, rate coefficients of electron-impact reactions, ionisation and attachment coefficients, as functions of the reduced electric field strength (E/N) and of the concentration of individual gas components. The results obtained by MC simulations were fitted with polynomials of up to the 3rd order with reasonable accuracy for E/N above 80 Td. The studied parameters below 80 Td were strongly non-linear as functions of E/N. This is mostly due to the influence of elastic collisions of electrons with CO₂ molecules prevailing in CO₂-dominant mixtures for E/N < 40 Td, and vibrational excitation collisions of N₂ species prevailing in N₂-dominant mixtures for E/N from 40 to 80 Td. The effect of these electron-impact processes was specific for each of the studied parameters.     

The effect of inclusion size on grain boundary wetting in Al-Sn alloys

The wetting behavior of liquid metal was studied for the Al-Sn system with particular reference to low Sn concentrations. It was shown that for Sn concentrations below 5 wt-%, liquid grain boundary films break up into separate inclusions, the wetting angle of which increases with decreasing inclusion size. Possible explanations for this phenomenon are discussed, and it is concluded that the wetting angle is not a fixed constant according solely to Young's equation, but that a correction factor is required for small inclusions.     

Hall mobility of amorphous Ge2Sb2Te5

The electrical conductivity, Seebeck coefficient, and Hall coefficient of three-micron-thick films of amorphous Ge₂Sb₂Te₅ have been measured as functions of temperature from room temperature down to as low as 200 K. The electrical conductivity manifests an Arrhenius behavior. The Seebeck coefficient is p-type with behavior indicative of multi-band transport. The Hall mobility is n-type and low (near 0.07 cm²/V s at room temperature).     

Hopping conduction in disordered carbon nanotubes

We report electrical transport measurements on individual disordered multiwalled carbon nanotubes, grown catalytically in a nanoporous anodic aluminum oxide template. In both as-grown and annealed types of nanotubes, the low-field conductance shows an exp[−(T₀/T)^1/2] dependence on temperature T, suggesting that hopping conduction is the dominant transport mechanism, albeit with different disorder-related coefficients T₀. The electric field dependence of low-temperature conductance behaves as exp[−(ξ₀/ξ)^1/2] at high electric field ξ at sufficiently low T. Finally, both annealed and unannealed nanotubes exhibit weak positive magnetoresistance at . Comparison with theory indicates that our data are best explained by Coulomb-gap variable-range hopping conduction and permits the extraction of disorder-dependent localization length and dielectric constant.