Evaluation of current and temperature effects on optical performance of InGaAlP thin-film SMD LED mounted on different substrate packages

The relationship between the photometric, electric, and thermal parameters of light-emitting diodes(LEDs) is important for optimizing the LED illumination design. Indium gallium aluminium phosphide(InGaAlP)-based thin-film surface-mounted device(SMD) LEDs have attracted wide attention in research and development due to their portability and miniaturization. We report the optical characterization of InGaAlP thin-film SMD LED mounted on FR4, 2 W, and 5 W aluminum(Al) packages. The optical and thermal parameters of LED are determined at different injection currents and ambient temperatures by combining the T3ster(thermal transient tester) and TeraL ED(thermal and radiometric characterization of power LEDs) systems. Analysis shows that LED on a 5 W Al substrate package obtains the highest luminous and optical efficiency.     

高亮度大功率InGaAlP红光LED芯片研制

报道了大功率高亮度InGaAlP红光LED芯片的设计和工艺制备,实验芯片采用环形插指状电极。和传统的LED芯片相比较,环形插指状电极LED芯片电流扩展分布更均匀,而且更有利于与其它器件的集成。对制备好的芯片进行了I-V特性、光谱特性、光通量和光强的测量。芯片的电性能非常好,其开启电压VT为1.5V;当工作电压达到3V时,工作电流为500mA;在工作电流为350mA时,峰值波长为635nm,半峰全宽为16.4nm,光强为830mcd。在色度学测试中,色坐标为x=0.6943,y=0.3056,显色指数为18.4。因此可以得知高亮度大功率InGaAlP红光LED是未来LED作为普通照明光源应用的第一步,而且将会在科学研究和工业投资的很多应用领域中成为新的焦点。     

Enhanced output power for InGaAlP LEDs by contact-transferred and mask-embedded lithography

The authors applied a simple, low-cost, mass-producible contact-transferred and mask-embedded lithography (CMEL) to texture p-GaP window layer for the fabrication of InGaAlP light-emitting diodes (LEDs) emitting at 612 nm. Under 20 mA current injection, it was found that forward voltages were 2.25, 2.24 and 2.25 V for CMEL-400 nm LED, CMEL-2 μm LED and the conventional LED without CMEL, respectively. It was also found that the 20 mA output powers were 1.43, 1.28 and 1.16 mW for CMEL-400 nm LED, CMEL-2 μm LED and the conventional LED without CMEL, respectively.     

InGaAlP/InGaP多量子阱中的红外向可见光的上转换

利用808nm激光二极管泵浦的Nd:YAG晶体发出的1064nm皮秒激光器实现了InGaAlP多量子阱材料的红外1064nm向可见光波长660nm、625nm、580nm的上转换,并且通过条纹相机收集的时间分辨表征了此材料的上转换激发态的寿命.波长1064nm向625nm的上转换激发态寿命约为5ns,而1064nm向660nm的上转换激发态寿命约为7ns.通过双光子原理解释了此现象.     

In0.5(Ga1-xAlx)0.5P合金的掺杂生长特性

利用LP-MOCVD分别生长Zn和S掺杂的In0.5(Ga1-xAlx)0 5P外延层,研究生长温度、掺杂源流量、V/Ⅲ比、Al组分以及衬底晶向偏离等生长条件对外延层掺杂浓度的影响.实验结果表明:降低生长温度和Al含量、增加DEZn流量、选择由(100)向(111)A偏6～15的衬底都有利于增加IRGaAlP合金中Zn的掺杂浓度;提高生长温度和增加SIH4流量、减小Al含量和V/Ⅲ比,都有助于增加Si掺杂浓度,而衬底晶向对Si掺杂浓度无影响.