Surface grating formation and erasing on a-Se films

Surface relief formation at holographic recording on amorphous selenium films was demonstrated and investigated. The presence of this optical phase modulation component is essential for ensuring significant, stable and erasable optical recording in a-Se films at 290–320 K temperatures, where conventional photodarkening was known as insignificant and unstable. Photocrystallization can only be observed in super-exposed a-Se films at the given experimental conditions of hologram recording. Erasing behavior of surface relief gratings under heat treatment was also investigated in order to reveal further details of the mechanism. Photoinduced structural transformations within the amorphous phase, connected to local ordering under the condition of light-induced fluidity, are proposed as an explanation for the relief formation and erasing. The observed reversible optical recording process may be useful for the various optoelectronic applications of photoconductive a-Se layers. Received: 12 June 2000 / Accepted: 6 June 2001 / Published online: 30 August 2001     

Electronic structure of CeAl2 thin films studied by X-ray absorption spectroscopy

We report X-ray absorption near edge structures (XANES) study of CeAl₂ thin films of various thicknesses, 40-120 nm, at Al K- and Ce L₃-edges. The threshold of the absorption features at the Al K-edge shifts to the higher photon energy side as film thickness decreases, implying a decreased in Al p-orbital charges. On the other hand, from Ce L₃-edge spectra, we observed a decrease in the 5d4f occupancy as the surface-to-bulk ratio increases. The valence of Ce in these thin films, as revealed by the Ce L₃-edge spectral results, is mainly trivalent. From a more detailed analysis we found a small amount of Ce⁴⁺ contribution, which increases with decreasing film thickness. Our results indicate that the surface-to-bulk ratio is the key factor which affects the electronic structure of CeAl₂ thin films. The above observations also suggest that charge transfer from Al to Ce is associated with the decrease of the film thickness.     

X-PEEM/NEXAFS and AFM of polypyrrole and copper micro-patterns on insulating fluoropolymer substrates

Micro-patterns (80 μm and 10 μm) of copper and semi-conducting polypyrrole on insulating fluorinated ethylene propylene substrates were characterized using synchrotron-based X-ray Photoemission Electron Microscopy (X-PEEM), Near Edge X-ray Absorption Fine Structure (NEXAFS), and Atomic Force Microscopy (AFM). Electronic states in the polypyrrole are verified using the NEXAFS data, and sample degradation upon irradiation is addressed. X-PEEM images show homogeneous distributions of the corresponding elements in the patterns. They do not exhibit dichroic effects and give information about the growth of copper and polypyrrole (i.e. nucleation of Cu, overgrowth of PPy, formation of PPy granules). AFM results are used to verify the topography of the patterns and support the findings on pattern growth.     

Charge compensation and the luminescence of Cr3+ in KMgF3

Studies of the photoluminescence spectra of Cr³⁺ ions in KMgF₃ crystals co-doped with Cr³⁺ and Ni²⁺ ions are reported. Several crystal field sites are identified by the different R-line spectra due to the ² E⁴ A ₂ transition and broadband luminescences associated with the ⁴ T ₂⁴ A ₂ transitions. Cr³⁺ ions substituting without local charge compensation on the octahedral Mg²⁺ site give rise to a low temperature R line in photoluminescence at =702.3 nm with a radiative decaytime of 3 ms at T=14 K. At T=300 K this isotropic centre gives rise to an unpolarized broadband ⁴ T ₂⁴ A ₂ emission, which results from the thermal occupancy of an excited ⁴ T ₂ state just above the ² E level which, at lower temperature, gives rise to emission in the R-line. Other crystal field sites are due to some Cr³⁺ ions having Mg²⁺ or K⁺ vacancies in nearest-neighbour positions, these vacancies being required to maintain charge neutrality in doped fluoride perovskites. The Cr³⁺–K⁺ vacancy complex results in the centre having trigonal symmetry, and low temperature, photoluminescence via R ₁ and R ₂ lines at 716.8 nm and 716.0 nm, respectively. Finally, Cr³⁺ ions having a nearest neighbour Mg²⁺ vacancy have tetragonal symmetry, experiencing weak crystal fields. In consequence, the ⁴ T ₂ level lies below ² E and the photoluminescence spectrum at low temperature takes the form of a polarized broad ⁴ T ₂⁴ A ₂ band with peak at 760 nm and radiative decaytime of 54 s.     

Octet-baryon form factors in the diquark model

We present an alternative parameterization of the quark-diquark model of baryons which particularly takes care of the most recent proton electric form-factor data from the E136 experiment at SLAC. In addition to electromagnetic form factors of the nucleon, for which good agreement with data is achieved, we discuss the weak axial vector form factor of the nucleon as well as electromagnetic form factors of and hyperons. Technical advance in calculating the pertinent analytic expressions within perturbative quantum chromodynamics is gained by formulating the wave function of the quark-diquark system in a covariant way. Finally, we also comment on the influence of Sudakov corrections within the scope of the diquark model.Sponsored in part by the Bundesministerium für Forschung und Technologie, Germany, under contract number 06 Wu 737     

Electrical and infrared dielectrical properties of silica aerogels and of silica-aerogel-based composites

In this contribution we have studied the key electrical parameters of silica aerogels and of silica-aerogel-based composites, namely the dielectric constants , the dielectric losses tan (at 1 kHz), and the breakdown fields E _b (at 50 Hz). For low-density bulk silica aerogels we find =1.25 and tan =0.0005. E _b is about 500 kV/cm in quasi-homogeneous fields, and of the order of MV/cm in strongly inhomogeneous fields. The dielectric constants of partially densified aerogels increase linearly with density; their dielectric losses are relatively large and their breakdown fields are comparativiely low. The same results are found for aerogels in the form of settled materials, i.e. aerogel granules and powders in air. Acrylate-based aerogel composites with volume fractions larger than 70% have low dielectric constants but their losses are at least 10 times higher than those of low-density aerogels. These materials sustain high local fields in the MV/cm region, while in quasihomogeneous fields, breakdown occurs at about 100 kV/cm. Based on the present results and the interplay with other physical properties (low mechanical resistance, low thermal conductivity, adsorption of water, etc.), silica aerogels and silica aerogel-acrylate-based composites are predicted to have a low potential for electrical insulation.     

Noise and correlation functions of hot carriers in semiconductors

We present a unifying theory of electronic noise appropriate to semiconductor materials in the presence of electric fields of arbitrary strength. In addition to thermal noise, a classification scheme for excess noise indicating different microscopic sources of fluctuations responsible for number and mobility fluctuations is provided. On the basis of simple two-level models, numerical calculations using a Monte Carlo technique are performed for the case of p-type Si at 77 K. The primary quantity which is evaluated by the theory is the auto-correlation function of current fluctuations which, subsequently, is analyzed in terms of correlation functions of the relevant physical variables. Accordingly, the corresponding current spectral-densities are determined and then compared with direct experimental results and/or analytical expressions. Important subjects which have been investigated are: (i) the effect of field assisted ionization on generation-recombination noise from shallow impurity levels; (ii) the contribution to the total noise spectrum of cross-correlation terms coupling fluctuations in velocity with those in energy and number; (iii) the current random telegraph signal and the corresponding spectral density associated with a mobility fluctuator. In all cases the numerical calculations are found to be in satisfactory agreement with experiments and/or analytical expressions thus fully supporting the physical reliability of the theoretical approach here proposed.List of the Symbols Used e Absolute value of the electron charge - f Frequency - f Distribution function - g ₁ Scattering strength with the scatter in state 1 - g ₂ Scattering strength with the scatter in state 2 - Reduced Planck constant - j Total current density - j _c Conduction current density - j _d Displacement current density - j _x Component along the x direction of the total current density - k Carrier wavevector - m Carrier effective mass - m ₀ Free electron mass - r Position vector - s Average sound velocity - t Time - u Fraction of ionized carriers - u _i Random telegraph signal related to carrier state - u _m Random telegraph signal related to scatterer state - v _d Ensemble average of the free carrier drift-velocity - v _i Carrier group velocity - v _t Ensemble average of the carrier velocity in the direction transverse to the applied field - v _ix Component along the x direction of the carrier group velocity - v _d ^r Ensemble average of the reduced drift-velocity - v ^r _i Reduced velocity component in the field direction of the i-th particle - v _ix ^j Reduced velocity component along the x axis of the i-th particle in band j - v ^r _ix Reduced velocity component along the x axis of the i-th particle - x _d Ensemble average of the carrier displacement along the x direction from the initial position - x _i Displacement along the x direction of the i-th carrier from the initial position - y _i i-th stochastic parameter - A Cross-sectional area of a homogeneous sample - C _I Auto-correlation function of the total current fluctuations - Auto-correlation function of the total current fluctuations due to mobility fluctuations - D Diffusion coefficient - D _t K Optical deformation potential - E Electrical field strength - E Electric field - E _x Component of the electric field along the x direction - E ₁ ⁰ Acoustic deformation potential - G Conductance - I Total current - I ₀ Total current in the voltage noise operation - I _m Total current associated with mobility fluctuations - I ^V Total current in the current noise operation - K _B Boltzmann constant - L Length of a homogeneous sample - N Number of free carriers which are instantaneously present in the device - N _A Acceptor concentration - N _I Total number of carriers inside the device participating in the transport (here assumed to be constant in time) - N _T Total number of carriers which are instantaneously present in the device - S _I Spectral density of current fluctuations - S _V Spectral density of voltage fluctuations - Spectral density of current fluctuations associated with the mobility fluctuations - Spectral density of current fluctuations due to correlations between fluctuations in number and velocity - Spectral density of current fluctuations due to generation-recombination processes - Spectral density of current fluctuations due to free carrier drift-velocity fluctuations - S _I ^l Longitudinal component with respect to the applied field of the current spectral-density - S _I ^t Transverse component with respect to the applied field of the current spectral-density - T Absolute temperature - T _e Electron temperature - V Electrical potential - V ^I Electrical potential in the voltage noise operation - W Collision rate - Z Small signal impedance - Poole-Frenkel factor - Equilibrium generation rate - _E Field dependent generation rate - Typical energy for thermally escaping from the impurity level - v _d ⁽⁰⁾ Fluctuation of the ensemble average of the driftvelocity associated with Brownian-like motion - v _d ^r(0) Fluctuation of the ensemble average of the reduced drift-velocity associated with Brownian-like motion - Carrier energy - ₀ Vacuum permittivity - _a Energy of the acceptor level - _r Relative static dielectric constant - Angle between initial and final k states - _op Optical phonon equivalent temperature - Mobility - ₀ Chemical potential - ₁ Mobility with the fluctuating scatterer in state 1 - ₂ Mobility with the fluctuating scatterer in state 2 - ₀ Crystal density - _E Field dependent volume recombination rate - _eq Equilibrium volume recombination rate - Conductivity - _g Cross-section for impact ionization - _c Average scattering time - _g Generation time - _l Carrier lifetime - _m Scatterer lifetime - _m1 Mean value of the time spent by the fluctuating scatterer in state 1 - _m2 Mean value of the time spent by the fluctuating scatterer in state 2 - _r Average recombination time - _T Transit time - Scattering rate - _AB Correlation function of the two variables A and B     

Correlations of two protons in relativisticdp-collisions

Two-proton correlations in thedpppn collisions of relativistic deuterons with protons are considered. These correlations give more information than inclusive proton spectra described in the framework of different deuteron structure function models because of uncertainty in the calculation of secondary interaction contribution (rescattering processes and final state interactions). We present the predictable calculations which show different behaviour of the correlation function for different deuteron structure function models in the kinematic region where contributions of secondary interactions are negligible.