Surface morphologies of anthracene single crystals grown from vapor phase

The morphologies and lattice structures of anthracene single crystals grown from the vapor phase were investigated using optical microscopy, phase contrast microscopy, atomic force microscopy (AFM), and X-ray diffraction analysis. Common morphologies with hexagonal large planes were observed irrespective of crystal size. The observation of certain surface morphologies with a phase contrast microscopy revealed that the spiral steps originated from screw dislocations present on the (0 0 1) planes. Moreover, the center and edge of the (0 0 1) planes had large curvatures, similar to hills. Resultantly, quarter-monolayer (ML) steps were observed on the large and flat planes between both hills.     

Extended defects in shallow implants

Extended defects are often found after ion implantation and annealing of silicon and they are known to affect dopant diffusion. The article reviews the structure and energetics of the most often found extended defects and describes the mechanisms by which all these defects grow in size and transform during annealing. Defects grow by interchanging the Si atoms they are composed of and thus maintain large supersaturations of free Si interstitials in the region. A model has been developped to describe such an evolution in presence of a free surface. It is shown that after low energy implantation, the surface of the wafer may recombine large amounts of these free Si interstitials, driving defects into dissolution before transformation into more stable forms. Received: 21 August 2002 / Accepted: 21 August 2002 / Published online: 12 February 2003 RID="*" ID="*"Corresponding author. Fax: +33-56/2257-999, E-mail: claverie@cemes.fr     

Polymer and surface roughness effects on the drag crisis for falling spheres

We make time resolved velocity measurements of steel spheres in free fall through liquid using a continuous ultrasound technique. We explore two different ways to induce large changes in drag on the spheres: 1) a small quantity of viscoelastic polymer added to water and 2) altering the surface of the sphere. Low concentration polymer solutions and/or a pattern of grooves in the sphere surface induce an early drag crisis, which may reduce drag by more than 50% compared to smooth spheres in pure water. On the other hand, random surface roughness and/or high concentration polymer solutions reduce drag progressively and suppress the drag crisis. We also present a qualititative argument which ties the drag reduction observed in low concentration polymer solutions to the Weissenberg number and normal stress difference.     

Homoepitaxy on bulk ammonothermal GaN

In this work results of extensive characterization of homoepitaxial layers grown on truly bulk ammonothermal gallium nitride (GaN) substrates are presented. The 2-μm-thick layers were deposited using metalorganic chemical vapor deposition. The photoluminescence (PL) and reflectance results show very intensive, perfectly resolved excitonic structure in range of band-edge emission of gallium nitride. This structure consists of both lines related to free excitons emission and very narrow lines (full-width at half-maximum (FWHM) value of the order of 0.3 meV) related with excitons bound to neutral acceptor and different neutral donors. In high excitation condition the biexciton emission was observed. The luminescence is uniform in the whole sample surface range. High PL homogeneity corresponds with structural and microscopic measurements performed on these layers. It proves that ammonothermal GaN substrates with perfect crystalline properties enable to grow excellent quality, strain-free homoepitaxial layers.     

Analysis of Frequency Spectrum of Laser-Induced Vibration of Microbeam Resonators

The vibration phenomenon during pulsed laser heating of micro-beams is investigated. The beam is made of silicon and is heated by a laser pulse with a non-Gaussian temporal profile and with an ultrashort pulse duration of 2ps, which incites vibration due to the thermoelastic damping effect. This coupled thermoelastic problem is solved using an analytical-numerical technique based on the Laplace transformation. The damping ratio and resonant frequency shift ratio of beams due to the air damping effect and the thermoelastic damping effect are also examined and discussed.     

Poisson-Vlasov: stochastic representation and numerical codes

In this paper, we examine the effects of the gravitational field on the dynamical evolution of the cavity-field entropy and the creation of the Schr?dinger-cat state in the Jaynes-Cummings model. We consider a moving two-level atom interacting with a single mode quantized cavity-field in the presence of a classical homogeneous gravitational field. Based on an su(2) algebra, as the dynamical symmetry group of the model, we derive the reduced density operator of the cavity-field which includes the effects of the atomic motion and the gravitational field. Also, we obtain the exact solution and the approximate solution for the system-state vector, and examine the atomic dynamics. By considering the temporal evolution of the cavity-field entropy as well as the dynamics of the Q-function of the cavity-field we study the effects of the gravitational field on the generation of the Schr?dinger-cat states of the cavity-field by using the Q-function, field entropy and approximate solution for the system-state vector. The results show that the gravitational field destroys the generation of the Schr?dinger-cat state of the cavity-field.     

Evolution of dislocations in perylene films with thickness and deposition rate

The growth of perylene films on an amorphous oxide bottom layer is investigated. The perylene films show clear spiral growth and formation of screw dislocations. As a function of deposition rate and film thickness the densities of screw dislocations, grains as well as the roughness and the lateral correlation length are determined from AFM images. The evolution of microstrain as calculated from an XRD peak profile analysis corresponds to the dislocation density. The simultaneous decrease of grain density and dislocation density with film thickness is explained by considering the overgrowth of grains due to loss of dislocations acting as growth spirals. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

     

Research on Quantum Searching Algorithms Based on Phase Shifts

One iterative in Grover＇s original quantum search algorithm consists of two Hadamard-Walsh transformations, a selective amplitude inversion and a diffusion amplitude inversion. We concentrate on the relation among the probability of success of the algorithm, the phase shifts, the number of target items and the number of iterations via replacing the two amplitude inversions by phase shifts of an arbitrary φ = ψ（0 ≤, ψ≤ 27r）. Then, according to the relation we find out the optimal phase shifts when the number of iterations is given. We present a new quantum search algorithm based on the optimal phase shifts of 1.018 after 0.57π√M/N iterations. The new algorithm can obtain either a single target item or multiple target items in the search space with the probability of success at least 93.43%     

Evolutionary construction of geographical networks with nearly optimal robustness and efficient routing properties

Robust and efficient design of networks on a realistic geographical space is one of the important issues for the realization of dependable communication systems. In this paper, based on a percolation theory and a geometric graph property, we investigate such a design from the following viewpoints: (1) network evolution according to a spatially heterogeneous population, (2) trimodal low degrees for the tolerant connectivity against both failures and attacks, and (3) decentralized routing within short paths. Furthermore, we point out the weakened tolerance by geographical constraints on local cycles, and propose a practical strategy by adding a small fraction of shortcut links between randomly chosen nodes in order to improve the robustness to a similar level to that of the optimal bimodal networks with a larger degree for the network size N. These properties will be useful for constructing future ad hoc networks in wide-area communications.     

Nanointegration of ZnO with Si and SiC

The study is dedicated to some aspects of the controlled heteroepitaxial growth of nanoscaled ZnO structures and an investigation of their general and dimension mediated properties. ZnO nanostructures were synthesized by optimized MOCVD process via two growth approaches: (i) catalyst free self-organized growth of ZnO on Si substrates and (ii) ZnO heteroepitaxy on p-type hexagonal 4H-SiC substrates. The SiC substrate was prepared by sublimation epitaxy and served as a template for the ZnO epitaxial growth. The epitaxial growth of n-ZnO on p-SiC resulted in a regular matrix of well-faceted hexagonally shaped ZnO single crystals. The achievement of ZnO integration with Si encompasses controlled growth of vertically oriented nanosized ZnO pillars. The grown structures were characterized by transmission electron microscopy and microphotoluminescence. Low concentration of native defects due to a stoichiometry balance, advanced optical emission, (excitonic type near-band-edge emission and negligible defect related luminescence) and continuous interfaces (epitaxial relationship ZnO_[0 0 0 1]/SiC_[0 0 0 1]) are evidenced. The ZnO nanopillars were further probed as field emitters: the grown structures exhibits advanced field emission properties, which are explained in term of dimensionality and spatial uniformity of the nanopillars. The present results contribute to understanding and resolving growth and device related issues of ZnO as a functional nanostructured material.