On the electron energy spectrum in heavily doped non-parabolic semiconductors

An attempt is made to present a simple theoretical analysis of the energy-wave vector dispersion relation of the conduction electrons in heavily doped non-parabolic semiconductors forming band tails. We observe that the complex energy spectrum in doped small-gap materials whose unperturbed conduction band is described by the three band model of Kane is due to the interaction of the impurity atoms in the tail with the spin-orbit splitting constant of the valence band (Δ), For band-gap (E_g)<Δ the imaginary part predominates which tails in to the conduction band. For the opposite inequality the real part comes in to play which tails in to the split-off band. In the absence of the band tailing effect, the imaginary part of the complex energy spectrum vanishes and the same is also true for doped two-band Kane-type and parabolic energy bands respectively. The present formulation helps us in investigating the Boltzmann transport equation dependent transport properties of degenerate semiconductors and are expected to agree better with experiments. The well-known results of unperturbed three and two band models of Kane together with wide-gap parabolic energy bands have been obtained as special cases of our generalized analysis under certain limiting conditions.     

Site segregation in size-mismatched nanoalloys: Application to Cu-Ag

In order to determine the energetic driving forces for surface segregation in bimetallic clusters, we use a combined approach coupling numerical simulations within an N-body interatomic potential and a lattice-gas model. This approach, which has been used successfully to study both the superficial segregation in semi-infinite alloys and the intergranular segregation, allows us to determine the relative contributions of the three elementary driving forces for the different sites of the cluster surface (vertices, edges and facets) in both dilute limits for the Cu-Ag system. We show that the segregation hierarchy based on broken-bond arguments (preferential segregation to the vertex sites, less to edge sites, and least to facet sites) is not at all universal. In particular, unusual hierarchies are predicted when the sizes of the constituents are strongly different. Furthermore, we compare the segregation driving forces for cubo-octahedral and icosahedral clusters. They are similar for the vertex sites and edge sites, whereas they differ significantly for the sites of the triangular facets. The segregation of the species with the largest atomic radius (Ag) is indeed largely enhanced in the icosahedral structure due to dilations of the orthoradial distances.     

Optical and conductive properties of AlSi-alloy/SiCp composites: application in modelling CO2 laser processing of composites

The optical properties—reflectivity, real part of the refractive index, absorption coefficient as well as the thermal and electrical conductivity of AlSi-alloy/SiC_p composite were measured. The optical parameters and both conductivities decreased with the increase of SiC_p particles volume in AlSi-alloy matrix. This decrease was almost linear for the volume fraction of SiC_p particle up to 10 vol% of the total mass of the composite. For the 15 vol% of SiC_p particles, the departure from linearity is connected with the presence of additional phases in AlSi-alloy/SiC_p composite materials. The measured temperature dependencies of optical reflectivity and electrical conductivity for AlSi-alloy/SiC_p 15 vol% are of metallic character. Modelling of the interaction of the CO₂ laser radiation with AlSi-alloy/SiC_p 15 vol% composite should allow to estimate the initiation time at which the surface composite reaches melting temperature.     

Directional crystallization and self-assembling initiated by mechanical shock or electron beam in nanocrystalline Co-C and Fe-C films

We investigated iron and cobalt films with 20% carbon concentration with nanocrystalline structure. One of the aims of this work is to analyze the physical nature of high-speed structural self-assembling as often happens in explosive crystallization processes in these films.     

极谱杂多酸吸附波测定合金中硅

在pH2—4的盐酸介质中,硅(Ⅳ)、锑(Ⅲ)与铝(Ⅵ)形成三元杂多酸,此三元杂多酸在0.4mol/L的HCl中能迅速在滴汞电极上还原而产生灵敏的极谱电流。其峰电位为-0.30V(vs.SCE)。测定下限是8×10~(-8)mol/L。     

Thermodynamic Properties and Melting Behavior of Bi–Sn–Zn Alloys

Summary. The partial and integral enthalpies of mixing of liquid Bi–Sn–Zn alloys were determined at 500°C by a drop calorimetric technique using a Calvet-type microcalorimeter. The ternary interaction parameters in the Bi–Sn–Zn system were fitted using the Redlich-Kister-Muggianu model for substitutional solutions, and isoenthalpy curves of the integral molar enthalpy of mixing at 500°C were constructed. Furthermore, a DSC technique was used to determine the liquidus temperatures in three sections (3, 5, and 7 at.% Zn) as well as the invariant reaction temperature of the ternary eutectic L ⇄ (Bi) + (Sn) + (Zn). The ternary eutectic reaction was found at 135°C.     

Deposition of complex multielemental thin films

Modern condensed-matter physics is increasingly concerned with the design, synthesis, analysis, and exploitation of chemically complex materials and structures. Complex metal oxides and strongly correlated electron systems such as YBa₂Cu₃O_7−x and La_1−xSr_xMnO₃ are paradigmatic examples. Their production in the form of high-quality thin films is of both technological and fundamental importance and has stimulated a concerted effort in the last two decades to find and optimize efficient techniques to this end. This review discusses the physics behind and the requirements for synthesizing high-quality films of such materials and examines fundamental aspects of the growth processes associated with magnetron sputtering and pulsed laser deposition, the two techniques which presently offer the best solutions in this burgeoning field.     

Theoretical study of surface plasmons coupling in transition metallic alloy 2D binary grating

The excitation of a surface plasmon polariton (SPP) wave on a metal–air interface by a 2D diffraction grating is numerically investigated. The grating consists of homogeneous alloys of two metals of a formula A_xB_1−x, or three metals of a formula A_xB_yC_z, where A, B and C could be silver (Ag), copper (Cu), gold (Au) or aluminum (Al).It is observed that all the alloys of two metals present a very small change of surface plasmon resonance (SPR) irrespective of composition x. Moreover, the addition of 25% of Al to two metals alloy is insufficient to change the SPR curves. The influence of the different grating parameters is discussed in details using rigorous coupled-wave analysis (RCWA) method. Furthermore, the SPR is highly dependent on grating periods (d_x and d_y) and the height of the grating h. The results reveal that d_x= d_y= 700 nm, h=40 nm and duty cycle w=0.5 are the optimal parameters for exciting SPP.     

Structural and optoelectronic properties of Mg substituted ZTe (Z=Zn,Cd and Hg)

Wide band gap semiconductor alloys, Mg_xZ_1−xTe (Z=Zn, Cd and Hg), are investigated over a full range of Mg compositions (0≤x≤1) using density functional theory (DFT). The variation in the lattice constant of Mg_xZ_1−xTe is linear with the composition x, and all these alloys obey Vegrd's law. The CdTe (6.50 Å) and MgTe (6.44 Å) are lattice matched compounds, therefore the lattice constant of MgCdTe decreases slightly with the concentration x, whereas the lattice constant also decreases for MgHgTe but increases for MgZnTe. It is due to the fact that Mg has larger size than Zn and smaller size than Cd and Hg. The band gap of these compounds are calculated using the modified Becke–Johnson (mBJ) exchange potential as LDA and GGA are not effective in producing the experimental band gap of a strongly correlated electron system. The calculated band gaps of these compounds cover the range 0–3.5 eV and are consistent with the experimental band gaps. The band gaps exhibit nonlinear behavior or bowing effect with the change in concentration. The frequency dependent optical properties like dielectric functions, and indices of refraction of these ternary systems are also calculated and discussed.     

Recovery of low temperature electron irradiation-induced damage in n-type gaas

Undoped n-type GaAa was irradiated near 5 and 77 °K with electrons having incident energies between 0.46 and 1.30 MeV. The recovery of the electrical resistivity and the Hall coefficient upon annealing from 4 to 520 °K was monitored. Changes which occurred upon annealing below 200 °K could be reversed by ionizing radiation. A small amount of irreversible ionization-induced recovery was observed after irradiation near 5 °K. Major irreversible recovery stages were centered near 235 (stage I), 280 (stage II) and 520 °K (stage III). Recovery in stage I and II obeyed first order kinetics. The activation energies of stages I and II were determined as 0.72 and 0.83 eV, respectively. The carrier concentration changes per unit irradiation dose corresponding to the three recovery stages differed in their energy dependence indicating that the defects which are removed in stage III have the lowest threshold energy. The carrier concentration changes per unit irradiation dose corresponding to stages I and III were higher for irradiation near 5 °K than for irradiation near 77 °K.