Titanium nanocarbides: Synthesis and modeling

The present state of research on the production and modeling of nanostructures based on titanium carbide-a typical representative of an extensive class of carbides of d-and f-metals-is reviewed. Methods for the synthesis of various Ti-C nanostructures (molecular clusters, nanocrystallites, nanospheres, nanofibers, nanowires) are examined, and their morphology, atomic structure, and known physicochemical characteristics are described. Theoretical models of the atomic structure and properties of new types of nanostructures in the titanium-carbon system (endo-and exohedral titanofullerenes, “hybrid” structures based on carbon nanotubes, the so-called peapods, nanocables, and a number of others) and the prospects for their application as components of nanoceramics, hydrogen accumulators, materials for spintronics, etc. are discussed. __________ Translated from Teoreticheskaya i éksperimental’naya Khimiya, Vol. 43, No. 1, pp. 1–23, January–February, 2007.     

Interpretation of initial stage of 3C-SiC growth on Si(1 0 0) using dimethylsilane

The initial stage of cubic silicon carbide (3C-SiC) growth on a Si(0 0 1) surface using dimethylsilane (DMS) as a source gas was observed using scanning tunneling microscopy (STM) and reflection high-energy electron diffraction (RHEED). It was found that the dimer vacancies initially existing on the Si(0 0 1)-(2 × 1) surface were repaired by the Si atoms in DMS molecules, during the formation of the c(4 × 4) surface. From the STM measurement, nucleation of SiC was found to start when the Si surface was covered with the c(4 × 4) structure but before the appearance of SiC spots in the RHEED pattern. The growth mechanism of SiC islands was also discussed based on the results of RHEED, STM and temperature-programmed desorption (TPD).     

Microstructure Evolution in Laser RS Co-base Metastable Alloy

ＭｉｃｒｏｓｔｒｕｃｔｕｒｅＥｖｏｌｕｔｉｏｎｉｎＬａｓｅｒＲＳＣｏ－ｂａｓｅＭｅｔａｓｔａｂｌｅＡｌｌｏｙＷＡＮＧＡｎａｎ；ＣＨＥＮＧＳｈｕｎｑｉ；ＧＵＯＺｈｉｙａｏ（ＫｕｎｍｉｎｇＵｎｉｖｅｒｓｉｔｙｏｆＳｃｉｅｎｃｅａｎｄＴｅｃｈｎｏｌｏｇｙ，...     

Flame Temperature Effect on the Structure of SiC Nanoparticles Grown by Laser Pyrolysis

Small SiC nanoparticles (10 nm diameter) have been grown in a flow reactor by CO₂ laser pyrolysis from a C₂H₂ and SiH₄ mixture. The laser radiation is strongly absorbed by SiH₄ vibration. The energy is transferred to the reactive medium and leads to the dissociation of molecules and the subsequent growth of the nanoparticles. The reaction happens with a flame. The purpose of the experiments reported in this paper is to limit the size of the growing particles to the nanometric scale for which specific properties are expected to appear. Therefore the effects of experimental parameters on the structure and chemical composition of nanoparticles have been investigated. For a given reactive mixture and gas velocity, the flame temperature is governed by the laser power. In this study, the temperature was varied from 875°C to 1100°C. The chemical analysis of the products indicate that their composition is a function of the temperature. For the same C/Si atomic ratio in the gaseous phase, the C/Si ratio in the powder increases from 0.7 at 875°C up to 1.02 at 1100°C, indicating a growth mechanism limited by C₂H₂ dissociation. As expected, X-ray diffraction has shown an improved crystallisation with increasing temperature. Transmission electron microscopy observations have revealed the formation of 10 nm grains for all values of laser power (or flame temperature). These grains appear amorphous at low temperature, whereas they contain an increasing number of nanocrystals (2 nm diameter) when the temperature increases. These results pave the way to a better control of the structure and chemical composition of laser synthesised SiC nanoparticles in the 10 nm range.     

Large-area boron carbide protective coatings for controlled thermonuclear research prepared byin situ plasma CVD

Impurity release from the first wall and components facing the hot plasma in Tokamak devices for controlled fusion research and the concomitant pollution of the plasma lead to enhanced energy losses and deuterium-tritium luel dilution. Both these effects can prevent reaching the ignition conditions. The recently developed technique for large areain situ deposition of boron carbide protective coatings by means of plasma-induced chemical vapor deposition enables one to significantly improve the purity of the fusion plasma. The prospects of approaching the scientific break-even in the large machines of the Tokarnak type has been increased.Extended version of an invited paper presented at the 10th International Symposium on Boron, Borides, and Related Compounds, Albuquerque, New Mexico, August 1990.The term Tokarnak is an abbreviation of the Russian name toroidal magnetic chamber.     

WS2 超细粉体的固相法合成

WS2 超细粉体的固相法合成;WS2;固相反应;过硫系数;高能球磨;粒度     

Chloroaqua Complexes [M3S4(H2O)9?xClx](4?x)+ (M = Mo, W; x = 4, 6, 7) and Their Supramolecular Compounds with Cucur[8]uril

Compounds of trigonal cluster chloroaqua complexes with cucurbit[8]uril were synthesized by slowly evaporating HCl solutions of chalcogenides heterometallic cubane cluster complexes of molybdenum and tungsten with cucurbit[8]uril in air; the complexes were characterized by X-ray diffraction analysis: (H₃O)₈[Mo₃S₄(H₂O)_2.5Cl_6.5]₂Cl(PdCl₄)·(C₄₈H₄₈N₃₂O₁₆)· 29H₂O (a = 13.3183(17) Å, b = 13.7104(18) Å, c = 18.225(3) Å; α = 80.263(3)°, β = 77. 958(3)°, γ = 87.149(4)°, V = 3207.4(7) ų, space group P , Z = 1, ρ(calc) = 1.900 g/cm³), (H₃O)₄ [Mo₃S₄(H₂O)₃Cl₆]₂·(C₄₈H₄₈N₃₂O₁₆)₃·68H₂O (a = 21.413(6) Å, c = 49.832(10) Å; γ = 120°, V = 19788(8) ų, space group R , Z = 3, ρ(calc) = 1.695 g/cm³), (H₃O)₆ [Mo₃S₄(H₂O)₃Cl₆]₂Cl₂·(C₄₈H₄₈N₃₂O₁₆)·12H₂O (a = 15.881(2) Å, b = 17.191(2) Å, c = 23.276(4) Å; β = 98.865(15)°, V = 6278.7(15) ų, space group P2₁/c, Z = 2, ρ(calc) = 1.638 g/cm³), [W₃S₄(H₂O)₅Cl₄]₂·(C₄₈H₄₈N₃₂O₁₆)₃·35H₂O (a = 21.038(3) Å; α = 61.20(1)°, V = 6762.0(14) ų, space group R , Z = 1, ρ(calc) = 1.582 g/cm³). The [Mo₃S₄(H₂O)₃Cl₆]²⁻ anion complex was isolated as three geometrical isomers.Original Russian Text Copyright © 2004 by E. V. Chubarova, D. G. Samsonenko, H. G. Platas, F. M. Dolgushin, A. V. Gerasimenko, M. N. Sokolov, Z. A. Starikova, M. Yu. Antipin, and V. P. Fedin__________Translated from Zhurnal Strukturnoi Khimii, Vol. 45, No. 6, pp. 1049–1058, November–December, 2004.     

制备高比表面积碳化硅的几种影响因素

采用溶胶凝胶法，以蔗糖和正硅酸乙酯(TEOS)为原料，草酸为TEOS水解的催化剂，制备均相碳化硅前驱体，在氩气氛和高温条件下(1 350～1 600 ℃)将碳化硅先驱体进行碳热还原，制备出高比表面积的SiC。考察了水/TEOS物质的量的比、碳/硅物质的量的比及镍盐等因素对碳化硅比表面积的影响。结果表明，当n_water/n_TEOS=7.5，n_C/n_Si=4时，适宜的镍催化剂(n_Ni/n_TEOS=0.005)，凝胶形成的时间最短，镍盐的加入可使碳热还原温度降低200 ℃。     

Synthesis, structure and reactivity of binuclear metal-metal bonded molybdenum(V) and tungsten(V) thioselenohalides: Molecular structure of Mo2(μ-S2)2Cl6(SeCl2)2 and W2(μ-S2)2Cl6(SeCl2)2

Thioselenohalide complexes Mo₂(μ-S₂)₂Cl₆(SeCl₂)₂ (I), Mo₂(μ-S₂)₂Br₆(SeBr₂)₂ (II), and W₂(μ-S₂)₂Br₆(SeBr₂)₂ (III) were synthesized by the reactions of corresponding metal halides or carbonyls or molybdenum metal with excesses of S₂ X ₂+Se₂ X ₂ mixtures. The complex W₂(μ-S₂)₂Cl₆(SeCl₂)₂ (IV) was obtained by an exchange reaction between (III) and excess of Se₂Cl₂. Coordination of the neutral SeX ₂ ligands to thiohalidesM ₂(μ-S₂)₂ X ₆ results in higher thermal stability, and suggests the possibility to synthesize SeX ₂ complexes of the unstable parent tungsten thiohalides. An unusual oxidative addition reaction of (I) was detected: {fx27-1} Both (I) and (IV) were characterized by X-ray crystal structure analysis. They are isostructural and form discrete molecules. Bridging S ₂ ^2? ligands are coordinated perpendicularly to the metal-metal bond;d(M?M)=2.8066 Å and 2.793 Å for I and IV, respectively. Nonequivalence of chlorine atoms which are bound to the metal atom, relate to nonequivalence of halogen atoms in the complexesM ₂(μ?S₂)₂ X ₈ ^2? . Chlorine atomstrans to SeCl₂ ligands form short bonds with the metal; the corresponding³⁵Cl NQR frequency is increased. The selenium dichloride ligand is ambidentate. The selenium atom binds as a donor to the metal and as an acceptor to two chlorine atoms which are also bound covalently to the same metal atom.     

WxC-MCM-48催化剂的合成、表征及加氢脱硫催化性能

以正硅酸乙酯(TEOS)为硅源，十六烷基三甲基溴化铵(CTAB)为表面活性剂，仲钨酸铵为钨源，采用水热晶化法一步合成了不同钨含量(以Si、W物质的量比n_Si/n_W表示)的WO₃-MCM-48，然后经甲烷/氢气(V/V=1/4)混和气体程序升温还原碳化(TPC)，制备出了W_xC-MCM-48(x=1、2)催化剂，采用XRD、N₂吸附-脱附和NH₃-TPD对样品的结构进行了表征，用噻吩作为模型化合物，对W_xC-MCM-48催化剂的加氢脱硫催化活性进行了评价。结果表明，在一定钨含量的条件下，WO₃-MCM-48和W_xC-MCM-48样品仍然保持MCM-48的三维立方有序介孔结构，n_Si/n_W=30～15时，碳化钨的物相为W₂C；n_Si/n_W=7.5时，碳化钨为W₂C和WC物相，W_xC-MCM-48催化剂表现出了良好的加氢脱硫催化性能。