Study of local lattice relaxation of substitutional impurities in silicon and germanium

Local lattice relaxation of substitutional donors in silicon investigated using self‐consistent multiple scattering Xα (MSXα) method within the framework of the standard muffin‐tin potential approximation is extended to substitutional donors in germanium and substitutional acceptors in both silicon and germanium. Incorporating the effect of lattice relaxation surrounding the impurity makes the model suitable for both shallow and deep levels. Chemical trends of some aspects of impurity states, such as local lattice relaxation and charge transfer, of the impurities both in silicon and germanium are inferred. © 2004 Wiley Periodicals, Inc. Int J Quantum Chem, 2004     

Substitutional carbon defects in silicon: A quantum mechanical characterization through the infrared and Raman spectra

The infrared (IR) and Raman spectra of eight substitutional carbon defects in silicon are computed at the quantum mechanical level by using a periodic supercell approach based on hybrid functionals, an all electron Gaussian type basis set and the CRYSTAL code. The single substitutional C _s case and its combination with a vacancy (C _sV and C _sSiV) are considered first. The progressive saturation of the four bonds of a Si atom with C is then examined. The last set of defects consists of a chain of adjacent carbon atoms C, with i = 1–3. The simple substitutional case, C _s, is the common first member of the three sets. All these defects show important, very characteristic features in their IR spectrum. One or two C related peaks dominate the spectra: at 596 cm⁻¹ for C _s (and C _sSiV, the second neighbor vacancy is not shifting the C _s peak), at 705 and 716 cm⁻¹ for C _sV, at 537 cm⁻¹ for C and C (with additional peaks at 522, 655 and 689 for the latter only), at 607 and 624 cm⁻¹, 601 and 643 cm⁻¹, and 629 cm⁻¹ for SiC, SiC, and SiC, respectively. Comparison with experiment allows to attribute many observed peaks to one of the C substitutional defects. Observed peaks above 720 cm⁻¹ must be attributed to interstitial C or more complicated defects.     

Dispersion state of CuO on CeO2

XRD and XPS are used to study the dispersion state of CuO on ceria surface. The dispersion capacity values of CuO measured by the two methods are consistent, which are of 1.20 mmol CuO/100 m² CeO₂. In addition, the results reveal that highly dispersed Cu²⁺ ions are formed at low CuO loadings and that increasing the CuO content to a value higher than its dispersion capacity produces crystalline CuO after the surface vacant sites on CeO₂ are filled. The atomic composition of the outermost layer of the CuO/CeO₂ samples has been probed by using static secondary ion mass spectroscopy (SSIMS), and the ratim of Cu/Ce are found to be 0.93 and 0.46 for the 1.22 and 0.61 mmol CuO/CeO₂ samples respectively. Temperature-programmed reduction (TPR) profile with two reduction peaks at 156 and 165°C suggests that the reduction of highly dispersed Cu²⁺ ions consists of two steps and is easier than that of CuO crystallites, in which the TPR profile has only one reduction peak at about 249°C. The above experimental results are in good agreement with the prediction of the incorporation model. Project supported by the National Natural Science Foundation of China.     

Phase transformations during electrochemical incorporation of lithium in intermetallic compounds of aluminum

Comparative study of the regularities of the reaction and specific features of phase formation during electrochemical incorporation of lithium from propylene carbonate solutions in intermetallic aluminum-based compounds (CuAl₂, Mg₂Al₃, and NiAl) and pure metals (Al, Cu, Mg, and Ni) was performed. The initial stage of the process was shown to be dissolution of lithium in the solid phase limited by diffusion for all studied substrates. Trace amounts of lithium-containing by-products, were detected in NiAl, Ni, and Cu samples. The subsequent change in the limiting stage is related to the beginning of formation of a new phase: metallic lithium (on Mg₂Al₃, NiAl, Mg, Ni, and Cu) or LiAl (on Al and CuAl₂ cathodes). In the latter case, the solid-phase substitution occurs, which is formally described by the equation: CuAl₂+2Li⁺+2e→2LiAl+Cu. Thus, the specific features of phase formation on the CuAl₂ electrode correspond to the highest (among three intermetallides studied) concentration of Al atoms in the crystal lattice of the compound. Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 8. pp. 1525–1530, August, 1998.     

锂参与合成MOF-5用于CO2/CH4混合气体分离

利用溶剂热法合成了不同锂含量的MOF-5(xLi-MOF-5, x=0, 1, 3, 5).在MOF-5结晶过程中,锂离子被合并入其骨架结构中.实验表明,合并入骨架的锂能够改变MOF-5的结构和表面化学性质.不同的xLi-MOF-5能够不同程度降低骨架相互穿插的程度从而导致其吸附分离能力的大幅改变.其中,3Li-MOF-5具有最高的二氧化碳捕获能力(5.47 mmol·g^-1),对40% CO₂/60% CH₄混合气体具有最优吸附选择性.     

Spontaneous Ga incorporation in ZnO nanowires epitaxially grown on GaN substrate

Surface‐diffusion‐induced spontaneous Ga incorporation process is demonstrated in ZnO nanowires grown on GaN substrate. Crucially, contrasting distributions of Ga atoms in axial and radial directions are experimentally observed. Ga atoms uniformly distribute along the ～10 μm long ZnO nanowire and show a rapidly gradient distribution in the radial direction, which is attributed substantially to the difference between surface and volume diffusion. The understanding on the incorporation process can potentially modulate doping and properties in semiconductor nanomaterials.

     

肌红蛋白在磷脂-月桂酸修饰的玻碳电极上的电化学行为及其分析应用

报道了肌红蛋白(Mb)在磷脂、月桂酸修饰的玻碳电极上的电化学行为 ,在 +0.2～ -0.7V(vs.Ag/AgCl)电位范围内 ,于pH6.0的0.01mol·L-1的KH2PO4、Na2HPO4底液中 ,肌红蛋白产生不可逆的还原电流峰 ;还原峰电流与肌红蛋白浓度在2.25×10-8 ～1.40×10-6 mol·L-1 范围内呈良好线性关系 ;线性回归方程为Ip(μA)=-0.01419 +0.2382cMb(10 -7mol·L -1) ,线性回归系数r(10)为0.998 ,检出限为1.20×10 -8mol·L -1,该电极可作为检测肌红蛋白的新型的高灵敏度电化学生物传感器。     

不同钴含量CoAPO-5分子筛的合成、表征及其催化环己烷氧化性能

用水热法合成了一系列不同含量钴掺杂的磷酸铝分子筛CoAPO-5. 合成的样品用X射线衍射(XRD), 扫描电镜(SEM), 紫外可见漫反射光谱(UV-Vis DRS), 热重分析(TG)仪和电感耦合等离子体发射光谱(ICP-AES)等进行了表征. XRD表征显示, 合成的CoAPO-5分子筛具有较高的结晶度, 分子筛晶胞参数与Co含量之间存在较好的对应关系. UV-Vis漫反射光谱显示合成的CoAPO-5分子筛具有骨架钴的特征三重峰; 焙烧后峰的强度降低, 表明分子筛骨架中Co2+可被氧化成Co3+. SEM表明该分子筛具有典型的AlPO4-5分子筛形貌特征. TG结果也表明Co2+进入了分子筛骨架, 分子筛具有较好的稳定性. 在环己烷氧化反应中CoAPO-5具有较好的催化性能, 环己烷转化率与环己酮选择性均较高; 随着分子筛中钴含量的增加, 环己烷的转化率增加.     

Irreversible capacity of the amorphous silicon thin-film electrodes

Irreversible processes accompanying the lithium incorporation into amorphous thin-film silicon are investigated. It is shown that the irreversible processes occurred during the cathodic polarization result in the formation of passive film at the silicon surface. The passive film at silicon is close, in its composition, to the passive film at carbonaceous materials. However, unlike the carbonaceous electrodes, no effect of electrolyte composition on the irreversible capacity of the silicon electrodes is observed.     

Oxygen deficiency in oxide films grown by PLD

The incorporation of oxygen atoms in oxide films grown by pulsed laser deposition depends upon the oxygen pressure and laser power density. By carefully controlling these two parameters it is possible to control the oxygen deficiency in the samples, and thus to change their physical properties from insulating and transparent to absorbing and conducting. By using X-ray diffraction, Rutherford backscattering spectroscopy and resistivity measurements, we show that depending upon the oxide materials oxygen deficiency in the films can induce either the growth of stable sub-oxide phases or the formation of nanocomposite films by phase separation. The first case corresponds to oxides with a mixed valency cation like Ti, which leads to the formation of stable, crystalline and highly conductive TiO_x sub-oxide phases. The second case is well described by the indium tin oxides (ITO) in which a large oxygen deficiency leads to metallic clusters embedded into a stoichiometric matrix, i.e. nanocomposite films. This phenomenon is due to the fact that sub-oxides of these compounds are not stable and thus the oxygen deficiency induced a phase separation.