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QuanZhenHUANG GongZhenCHENG HaiBoZHANG SongTaoDING XiaoBingYANG XiaoHaiZHOU GaoYongZHANG 《中国化学快报》2005,16(4):497-500
The Q-band position of tin-centered 5, 9, 14, 18, 23, 27, 32, 36-octabutoxy 2, 3-phthalocyanine(SnNc(OBu)8) exhibits dramatic red-shift as mixed with SnCl2 in CH2Cl2. 相似文献
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稀土红色荧光粉SrZnO2∶Eu3+的发光性能 总被引:4,自引:0,他引:4
A series of novel luminescent materials, SrZnO2∶M (M=Eu3+, or Eu3+ + Li+) have been synthesized by high-temperature solid-state reaction. The structure and luminescence properties of SrZnO2∶Eu3+ phosphor were studied through XRD, photoluminescence and Raman spectroscopy. The excitation spectra show a broad intense band and a number of small peaks corresponding to the inner 4f-shell excitations of Eu3+ (the strongest one is at 395 nm for 7F0-5L6). After SrZnO2∶Eu3+ phosphor was co-doped with Li+ ions, its charge transfer band extended to longer wavelengths. This resulted in increase of luminescent quantum efficiency of the sample. SrZnO2∶Eu3+,Li+ phosphor can be efficiently excited by longer UV. From the fluorescence spectrum of SrZnO2∶Eu3+ phosphor, apart from transition emissions of 5D0→ 7FJ (J=0~4), the transition emissions from 5D1 → 7FJ (J=0~2) have been observed. For the SrZnO2∶Eu3+ phosphor, under excitation of UV, the dominant emission is at about 612 nm, due to the 5D0→ 7F2 hypersensitive transition. The incorporation of Li+ ions greatly enhanced the luminescence intensity and made emission peak from 5D0 → 7F2 transition red-shifted. 相似文献
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封装并测量了瓦级大功率InGaN蓝色发光二极管(LED)在不同正向电流IF驱动下的光通量、电功率、发光效率、发射光谱和色品坐标等参数的变化。研究表明, 光通量与电功率随IF的增大呈亚线性增加,而发光效率η则下降。当IF从50 mA一直增大到450 mA左右时,发射光谱的峰值波长λp随IF的增加发生蓝移,蓝移现象可能与InGaN蓝光LED芯片在较大电流时能带被拉平以及In成分的作用有关。当IF大于500 mA或800 mA后,λp又发生红移,红移现象可能与大电流注入下InGaN蓝光LED芯片产生的热效应以及电子-空穴对辐射复合有关。此外,光谱的半峰全宽(FWHM)产生宽化现象,色坐标x和y值也发生变化。 相似文献
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以poly(3-hexylthiophene)(P3HT)为电子给体材料,[6,6]-phenyl-C60-butyric acid methyl ester (PCBM)为电子受体材料,制备了纯氯苯(CB)溶剂、纯氯仿(CF)溶剂和氯苯/氯仿(CB/CF)不同比例混合溶剂的共混体系太阳能电池.研究了不同溶剂及不同比例混合的混合溶剂对电池性能的影响.结果表明:以CB/CF(3/1)为溶剂制备的器件,紫外可见吸收光谱和器件外量子效率曲线显示出红移现象,原子力显微图表明P3HT和PCBM间形成良好的相分离结构.在100 mW/cm2强度光照射下,其开路电压Voc为0.61 V短路电流密度Jsc为9mA/cm2,填充因子FF为57.9%,能量转换效率PCE为3.2%. 相似文献
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通过热蒸发方法成功制备出CdS0.65Se0.35纳米带,得到的纳米带表面光滑,宽度厚度均一,表现出很高的结晶质量.使用近场光学显微镜对纳米带室温下的带边荧光波导和光致荧光近场光谱进行研究.发现CdS0.65Se0.35纳米带呈现良好的光波导的特性;同时通过近场光学显微镜得到的空间分辨光谱,发现随着传播距离的增大,纳米带的光致荧光光谱有持续的红移现象.这种光谱红移现象是带间跃迁过程中带尾态的吸收效应引起的,并作了光谱带尾态吸收的理论模拟与实验结果进行比较.光波导传输过程中光谱的变化反映了信息在整个传导过程中的情况,体现了信息传递过程中的稳定性和有效性.三元合金材料CdS0.65Se0.35纳米带的波导和光谱性质研究,对于其他组分可调的三元合金纳米结构的制备和研究,及发展新型的纳米功能器件有重要意义. 相似文献