Motion Control by ZV Shaper Synthesis Extended for Fractional Systems and Its Application to CRONE Control

Shaping command input or preshaping is used for reducing system oscillation in motion control. Desired systems inputs are altered so that the system finishes the requested move without residual oscillation. This technique, developed by N.C. Singer and W.P. Seering, is used for example in the aerospace field, in particular in flexible structure control. This paper presents the study of ZV shaper for explicit fractional derivative systems (generalized derivative systems). A robustness study of ZV shaper is then presented and applied to improve second generation CRONE control response time. Results from simulation and from a DC motor bench are also given.     

A DC excited waveguide multibeam CO2 laser using high frequency pre-ionization technique

High power industrial multibeam CO₂ lasers consist of a large number of closely packed parallel glass discharge tubes sharing a common plane parallel resonator. Every discharge tube forms an independent resonator. When discharge tubes of smaller diameter are used and the Fresnel numberN ≪ 1 for all resonators, they operate in waveguide mode. Waveguide modes have excellent discrimination of higher order modes. A DC excited waveguide multibeam CO₂ laser is reported having six glass discharge tubes. Simultaneous excitation of DC discharge in all sections is achieved by producing pre-ionization using an auxiliary high frequency pulsed discharge along with its other advantages. Maximum 170 W output power is obtained with all beams operating in EH₁₁ waveguide mode. The specific power of 28 W/m is much higher as compared to similar AC excited waveguide multibeam CO₂ lasers. Theoretical analysis shows that all resonators of this laser will support only EH₁₁ mode. This laser is successfully used for woodcutting     

直流放电制备CN自由基及其LIF探测

CN自由基是研究化学反应动力学的典型自由基，CN的动力学行为，如CN＋O2的反应已成为研究自由基－自由基反应的模型体系[1]，同时也在许多实际过程如燃烧过程，星际气体的形成过程中起着重要的作用[2，3]．利用含有CN的化合物进行光解、放电、与亚稳态原子分子进行传能反应是目     

Determination of trace metals in industrial boron carbide by solid sampling optical emission spectrometry. Optimization of DC arc excitation (current, atmosphere and chemical modifier)

Graphite arc emission spectrometry has become possible as a result of the invention of novel types of optical spectrometers with Echelle-optics and semiconductor array detectors, and by the application of electronically controlled, high current arc generators. An optimization of the excitation parameters to boron carbide analysis is reported here, measuring background corrected line intensities that were integrated for the time of total evaporation of 5 mg boron carbide sample with or without added chemical modifiers. The following set of experimental conditions were compared with respect of analytical sensitivity and precision: (A) no modifier, Ar + O₂ (20%), 16 A; (B) sample + graphite powder (1 + 1), Ar + O₂ (20%), 16 A; (C) sample + CaF₂ (1 + 1), Ar, 25 A; (D) sample + CaF₂ + graphite powder (1 + 1 + 1), Ar, 25 A. The graphite powder modifier resulted in improved precision in general, and the CaF₂ was effective as a plasma ionization buffer and fluorinating agent. The best compromise was found under conditions B, when oxygen was present in the discharge atmosphere. This is likely due to the stepwise conversion of the boron carbide matrix to the more volatile boron oxide. Under conditions B, detection limits in the ranges of 0.3–9 μg g⁻¹ for Al, Ca, Cr, Cu, Fe, Mg, Mn and Si and that of 18–38 μg g⁻¹ for Ti, W, and Zr were attained. Average RSDs of 10.2 and 9.7% were found, respectively, without and with internal referencing to boron.     

Caracterisation par analyse calorimetrique differentielle des complexes entre LiAlH4 et les ethers-couronnes 12-C-4, 15-C-5, dicyclohexano-18-C-6

The thermal behaviour of complexes [Li⁺-EC](AlH₄)^– withEC=12-C-4, 15-C-5, DC 18-C-6 (cis-anti-cis andcis-syn-cis isomers) was investigated by Differential Scanning Calorimetry (DSC). These complexes were prepared as solids from benzene solutions. Pure EC and several solvated species [Li⁺-EC](AlH₄)^–·nC₆H₆ (EC=15-C-5, DC 18-C-6syn) were also studied. DSC has revealed various phenomena. Solid-solid transitions were observed before melting for [Li⁺-EC](AlH₄)^– withEC=12-C-4 and 15-C-5. They are probably explained by small molecular modifications strongly dependent on the thermal history of the sample. A glass-transition was found for the pure crown-ether DC 18-C-6anti, the complex [Li⁺-EC](A1H₄)^– withEC=DC-18-C-6anti and the two solvates mentioned above.

     

柔性有机电致发光器件导电基板的工艺性能

在聚对苯二甲酸乙二醇酯(PET)柔性衬底上采用直流磁控溅射技术制备了氧化铟锡(ITO)透明导电薄膜,研究了衬底温度、溅射功率和溅射压强等工艺条件对薄膜光电性能的影响,并利用原子力显微镜(AFM)表征了衬底及ITO薄膜的表面形貌。结果表明,在PET衬底温度50℃、溅射功率100W和溅射压强2.66×10-1Pa的条件下,可以得到低方阻(50Ω/□)和高透过率(>90%)的透明导电薄膜。以此柔性ITO衬底为阳极,制备了结构为PET/ITO/NPB/Alq3/Mg∶Ag的柔性有机电致发光器件,在驱动电压为13V时,器件的发光亮度达到了2834cd/m2。     

太空育种射干的X射线荧光及X射线衍射分析和表征

联用X射线荧光光谱(XRF)和粉末X射线衍射(PXRD)方法,对我国独创的第4代太空诱变育种射干中多种元素种类和含量及晶态物质进行了研究。结果表明:太空组射干K元素含量比地面组、对照品分别提高了1.03和0.31倍,Mg元素分别提高了1.44和0.06倍,Ca,Mn和Fe元素含量比地面组分别提高了0.95,0.30和0.29倍,Al元素比地面组、对照组分别降低了38.5%和85.5%,并在射干中鉴别出一水草酸钙(CaC2O4.H2O)晶体,晶体含量是地面组<太空组<对照品。从而可得出结论:太空射干中人体必需的矿质元素比地面组都更接近或优于对照品。文章研究结果和方法对筛选品质优良的太空药材籽种和推广种植太空药材以及建立中药材质量评价标准,有积极的作用和重要意义。     

用电阻定义式求特殊电容器直流电阻

在电子线路工程及其教学过程中,都需要对电容器的直流电阻进行计算.然而,对一些特殊形状的电容器的直流电阻计算,普遍采用的电流密度法是比较麻烦的.本文根据电阻定义式,结合电阻的串联和并联的简洁关系,简单明了地对球冠形电容器、柱冠形电容器和正多棱柱形电容器等的直流电阻进行了计算,并给出相应的定量表达式.     

脉冲直流偏压增强的高质量立方氮化硼薄膜的合成

采用磁增强活性反应离子镀系统成功地合成了立方氮化硼薄膜.通过给基片施加脉冲直流偏压以代替传统的射频偏压,增强了立方氮化硼的成膜稳定性,研究了基片的直流脉冲偏压、等离子体放电电流、通入气体流量比(Ar/N₂)和基片温度沉积参数对立方氮化硼薄膜形成的影响规律.结果表明:随着基片负偏压和放电电流的增大,薄膜中立方氮化硼的纯度提高,当基片负偏压为155V,放电电流为15A时,可获得几乎单相的立方氮化硼薄膜.基片温度为500℃和Ar/N₂流量比为10时,最有利于立方氮化硼 关键词： 立方氮化硼 活性反应离子镀 脉冲偏压     

Proton conduction in the binary system (1 − x)CsHSeO4–xKHSeO4 studied with a free-energy model

Electrical Impedance Spectroscopy (EIS) was used to study the electrical properties of the (1???x)CsHSeO₄–xKHSeO₄ binary system with concentrations x?=?0.0 and 0.1. The results show a higher proton-conduction phase above 80°C for both concentrations, however, while DC conductivity of CsHSeO₄ shows a gradual change to higher values in the 80–118°C temperature range, the 0.9CsHSeO₄–0.1KHSeO₄ concentration reveals an abrupt change at about 80°C to an intermediate temperature phase. The observed behavior for the doped sample was modeled using a trial free-energy density, based on the concentration of mobile ions, that takes into account the formation of defects, configurational and phonon entropies, and defect-defect interactions. By minimising the free-energy density one obtains two roots for the carrier concentration at a given temperature, which corresponds to a stable and metastable configuration. It is possible to characterise the phase behavior of the system by means of temperature and two model parameters, which depend on the crystalline properties of the system, but not on temperature. One can successfully explain the conductivity behavior of the system by changing the model parameters if it is assumed that its variations are due to the carriers density.