低压供热涂层材料制备及热性能研究

低压供热技术具有安全系数高和节能降耗等优势,因而成为石化稠油长输管线、风力发电叶片冬季防覆冰和室内供暖等领域的研究热点之一。本文制备了一系列低压供热涂层材料,研究不同碳功能填料对涂层发热速率、发热功率及最高发热温度的影响规律,并揭示石墨烯和碳纤维对提升涂层材料热性能的协同作用。其中石墨烯纳米片的还原程度对材料热性能具有重要影响,降低其表面官能团密度对提升涂层供热特性具有促进作用,但是官能团密度过低会导致石墨烯纳米片的团聚现象,引起涂层发热不均匀。加入适量碳纤维可以提高石墨烯的均匀分散性,提升发热速率。优化石墨烯纳米片和碳纤维的比例后,采用24V电压驱动时,涂层材料的发热速率达到7.1℃·s^-1,功率密度为800W·m^-2,最高发热温度为124℃。     

波长校准用低压石英汞灯驱动电源的研制

研制波长校准用低压石英汞灯电源,用于驱动汞灯起辉并维持稳态发光。电路由EMI滤波电路、桥式整流电路、LCC半桥谐振逆变电路、控制电路和保护电路5部分组成。采用系统建模与仿真验证电路的可行性并计算电路参数理论值,利用示波器和功率表验证电源输出参数,功率输出稳定性不大于0.03 W。根据紫外可见近红外分光光度计国防最高计量标准对研制的电源驱动汞灯的工作效果进行评价。结果表明,汞灯能够输出系列特征谱线,谱线相对强度稳定性不大于5.16%;汞灯工作3 h后,灯管外壳表面温度为43℃。该驱动电源的性能参数满足JJG112–2015《低压石英汞灯波长标准器检定规程》的要求。     

基于吸收互补有机半导体本体复合薄膜的高性能柔性光突触晶体管

采用光吸收互补的聚(3-己基噻吩)(P3HT)和引达省并二噻吩-苯并噻二唑共聚物(PIDT-BT), 通过溶液法制备了两者的本体复合异质结构有机半导体薄膜, 并研究了薄膜的表面结构和光电性质. 将PIDT-BT:P3HT复合薄膜作为一类新型光敏沟道层, 与聚电解质介电材料相结合, 制备了高性能柔性低电压光突触晶体管. 考察了不同光刺激条件对光突触晶体管性能的影响及半导体机制, 发现PIDT-BT:P3HT器件具有明显光突触特性, 并且相较于单纯PIDT-BT或P3HT器件具有更高响应的兴奋性突触后电流. 基于PIDT-BT:P3HT薄膜的光突触器件, 在绿红双色光刺激下的响应大于两种单色光分别刺激的响应之和, 表明附加光刺激可调控器件的记忆效率. 该研究为发展高性能光响应半导体薄膜及柔性低功耗光突触器件提供了新策略.     

Fluid simulation of the pulsed bias effect on inductively coupled nitrogen discharges for low-voltage plasma immersion ion implantation

Planar radio frequency inductively coupled plasmas(ICP) are employed for low-voltage ion implantation processes,with capacitive pulse biasing of the substrate for modulation of the ion energy. In this work, a two-dimensional(2D) selfconsistent fluid model has been employed to investigate the influence of the pulsed bias power on the nitrogen plasmas for various bias voltages and pulse frequencies. The results indicate that the plasma density as well as the inductive power density increase significantly when the bias voltage varies from 0 V to-4000 V, due to the heating of the capacitive field caused by the bias power. The N+fraction increases rapidly to a maximum at the beginning of the power-on time, and then it decreases and reaches the steady state at the end of the glow period. Moreover, it increases with the bias voltage during the power-on time, whereas the N_2~+ fraction exhibits a reverse behavior. When the pulse frequency increases to 25 kHz and40 kHz, the plasma steady state cannot be obtained, and a rapid decrease of the ion density at the substrate surface at the beginning of the glow period is observed.     

W波段二次谐波突变复合腔回旋管数值模拟

 通过对二次谐波低电压突变结构复合腔回旋管中谐振腔结构、模式竞争以及电子注-波互作用的研究,分析了高频结构特性、寄生模式的抑制和工作参数优化等问题。给出了3 mm 二次谐波低损耗TE₀₂/TE₀₃模式回旋管的模拟设计结果。计算采用了坡度磁场,互作用效率得到显著提高。PIC粒子模拟结果表明:在电子注电压25 kV、电流4 A、纵横速度比1.6、工作磁场1.72 T时,回旋管可获得37 kW 的输出功率,横向运动能量转换效率高达51%,器件效率为37%。     

A microsystem of low-voltage-driven electrophoresis on microchip with array electrode pairs for the separation of amino acids

In this paper, a new approach for the separation of amino acids on the electrophoresis chip-based low-voltage-driven electrophoresis was reported in detail. This low-voltage-driven electrophoresis process could be realized by powering directly the arrayed electrode pairs with low direct current (DC) voltage to generate a moving electric field along the separation microchannel, which could maintain enough electric field strength for electrophoresis. The proposed microfluidic electrophoresis chip was bonded directly with silicon-on-insulator (SOI) substrate and polydimethylsiloxane (PDMS) cover plate at room temperature. The microfluidic channels and the arrayed electrodes were etched on SOI wafer by silicon microelectromechanical system technology. A specially integrated circuit was proposed to power a 30–60-V DC voltage to particular sets of these electrode pairs in a controlled sequence such that the moving electric field could be formed, and the low-voltage-driven electrophoresis could be realized in the microchannel. In the experiments, with 10⁻⁴ mol/L phenylalanine and lysine as analytes, the separation of amino acids on the low-voltage-driven electrophoresis microchip was conducted by homemade integrated control circuit; a method for separating amino acids was well established. It was also shown that the phenylalanine and lysine mixture was effectively separated in less than 7 min and with a resolution of 2.0. To the best of our knowledge, the low-voltage-driven microchip electrophoresis device could be of potential prospective in the fields of integrated and miniaturized biochemical analysis system. This work was financially supported by the Chinese National Science and Technology Committee “863 PLAN” (2006AA04Z345) and “International Cooperation Plan” (2006DFA13510) also by the Nature and Science Fund (no. 20675089) and (90307015) of Chinese National Educational Committee.     

基于氧化铟锡的无结低电压薄膜晶体管

在室温下制备了基于氧化铟锡(ITO)的底栅结构无结薄膜晶体管. 源漏电极和沟道层都是同样的ITO薄膜材料,没有形成传统的源极结和漏极结, 因而极大的简化了制备流程,降低了工艺成本.使用具有大电容的双电荷层SiO₂作为栅介质, 发现当ITO沟道层的厚度降到约20 nm时, 器件的栅极电压可以很好的调控源漏电流. 这些无结薄膜晶体管具有良好的器件性能: 低工作电压(1.5 V), 小亚阈值摆幅(0.13 V/dec)、 高迁移率(21.56 cm²/V·s)和大开关电流比(1.3× 10⁶). 这些器件即使直接在大气环境中放置4个月, 器件性能也没有明显恶化:亚阈值摆幅保持为0.13 V/dec,迁移率略微下降至18.99 cm²/V·s,开关电流比依然大于10⁶.这种工作电压低、工艺简单、 性能稳定的无结低电压薄膜晶体管非常有希望应用于低能耗便携式电子产品以及新型传感器领域.